Method for producing and manufacturing polycrystalline silicon after recycling and reusing tail gas of polycrystalline silicon reducing furnace by using improved Siemens process

A Siemens method and polysilicon technology, applied in the field of polysilicon production, can solve problems such as limitations, high energy consumption, and low conversion efficiency, and achieve the effects of saving production time, increasing polysilicon yield, and saving costs

Active Publication Date: 2017-01-04
哈尔滨化兴软控科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to solve the existing problems of high energy consumption, low conversion efficiency, etc. due to the limitation of thermodynamics in the production conditions of the existing improved Siemens method polysilicon. In order to solve the problem of production cost of polysilicon, an improved Siemens method polysilicon is provided. Method for producing polysilicon after recovery and recycling of tail gas from reduction furnace

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  • Method for producing and manufacturing polycrystalline silicon after recycling and reusing tail gas of polycrystalline silicon reducing furnace by using improved Siemens process
  • Method for producing and manufacturing polycrystalline silicon after recycling and reusing tail gas of polycrystalline silicon reducing furnace by using improved Siemens process
  • Method for producing and manufacturing polycrystalline silicon after recycling and reusing tail gas of polycrystalline silicon reducing furnace by using improved Siemens process

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specific Embodiment approach 1

[0021] Specific implementation mode one: this embodiment is the method for producing polysilicon after the exhaust gas of the improved Siemens method polysilicon reduction furnace is recycled and reused. In addition to one improved Siemens method polysilicon reduction furnace equipment, use gas pipelines to connect the tail gas outlet of each improved Siemens method polysilicon reduction furnace equipment to the intake inlet of the next improved Siemens method polysilicon reduction furnace equipment, and connect them in turn, and Install flow meters and flow control valves on each gas pipeline to obtain series equipment; the intake inlet of the first improved Siemens method polysilicon reduction furnace equipment that feeds the raw material gas into the series equipment, and the improved Siemens method polysilicon reduction furnace equipment chassis The uniformly distributed nozzle structure on the surface is sprayed into the reduction chamber of the improved Siemens method pol...

specific Embodiment approach 2

[0028] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the silicon cores used in the multiple improved Siemens method polysilicon reduction furnaces are round silicon cores or square silicon cores. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0029] Specific embodiment three: the difference between this embodiment and one of specific embodiments one or two is that the raw material gas is a mixed gas of trichlorosilane, dichlorodihydrosilane and hydrogen, wherein hydrogen and trichlorohydrogen The molar ratio of silicon is (2-4):1, and the mass percentage of dichlorodihydrosilane in the total mass of trichlorosilane and dichlorodihydrosilane is 4%-6%. Others are the same as in the first or second embodiment.

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Abstract

The invention provides a method for producing and manufacturing polycrystalline silicon after recycling and reusing tail gas of a polycrystalline silicon reducing furnace by using an improved Siemens process, relates to a method for producing polycrystalline silicon by an improved Siemens process, and solves the problems that existing production conditions of polycrystalline by an improved Siemens process are limited by thermodynamics, energy consumption is high, conversion efficiency is low, and production cost is high. The method comprises the following steps: serially connecting various polycrystalline silicon reducing furnace devices, connecting an outlet of each polycrystalline silicon reducing furnace device with an inlet of the next polycrystalline silicon reducing furnace device by a pipeline and connecting the polycrystalline silicon reducing furnace devices successively, feeding in raw gas, and carrying out reduction reaction on surfaces of silicon cores to form polycrystalline bars; or serially connecting the various polycrystalline silicon reducing furnace devices together, connecting the outlet of each polycrystalline silicon reducing furnace device to the inlet of the next polycrystalline silicon reducing furnace device by the pipeline, connecting the polycrystalline silicon reducing furnace devices successively, respectively connecting the inlets of the polycrystalline silicon reducing furnace devices by material supplementing pipelines to obtain series equipment, feeding the raw gas, and carrying out reduction reaction on the surfaces of the silicon cores to form the polycrystalline bars.

Description

technical field [0001] The present invention relates to a method of producing polysilicon. Background technique [0002] Polycrystalline silicon is a form of single crystal silicon, which has excellent semiconductor properties and has been widely used in the photovoltaic industry and microelectronics industry, such as semiconductor devices, integrated circuits and solar cells, all of which are made of silicon materials. At present, more than 80% of polysilicon production enterprises at home and abroad use the relatively mature improved Siemens method for polysilicon production. The production principle is that trichlorosilane and hydrogen are fed into the reaction chamber of a bell-type polysilicon reduction furnace, and a CVD reduction chemical reaction occurs on the surface of the silicon core at about 1100 ° C, and the silicon crystal particles generated by the reaction are deposited on the surface of the silicon core , so that the diameter of the silicon core becomes th...

Claims

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Application Information

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IPC IPC(8): C01B33/035
CPCC01B33/035Y02P20/10
Inventor 赵丽丽
Owner 哈尔滨化兴软控科技有限公司
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