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C-Si/a-Si/mc-Si solar cell structure and preparation method thereof

A solar cell, mc-si technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as increased time cost, passivation failure, unfavorable industrialization, etc., to reduce compounding, simplify production steps, reduce The effect of series resistance

Inactive Publication Date: 2017-01-11
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the above method, either the entire battery needs to be placed in a higher temperature atmosphere, or it takes too long
If the entire battery is placed in a higher temperature atmosphere, the intrinsic a-Si layer that plays a passivation role will be crystallized together, and the passivation effect will fail; if it takes too long, it will greatly increase the time cost, not conducive to industrialization
Therefore, no solar cell with c-Si / a-Si / mc-Si structure has been proposed and manufactured

Method used

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  • C-Si/a-Si/mc-Si solar cell structure and preparation method thereof
  • C-Si/a-Si/mc-Si solar cell structure and preparation method thereof

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Embodiment 1

[0025] A method for preparing a c-Si / a-Si / mc-Si structure solar cell, comprising the following steps:

[0026] (a) Provide N-type monocrystalline silicon wafers for cleaning;

[0027] (b) Depositing an intrinsic amorphous silicon layer with a thickness of 52nm on the light-receiving surface of the N-type single crystal silicon wafer by PECVD method, and depositing an intrinsic amorphous silicon layer with a thickness of 52nm on the backlight surface;

[0028](c) Deposit a 180nm boron source layer on the intrinsic amorphous silicon layer on the light-receiving surface by spin coating, then dry it in a box furnace at 100°C, and coat the intrinsic amorphous silicon layer on the backlight surface by spin coating. Deposit a 180nm phosphorus source layer on the crystalline silicon layer, and then dry it in a box furnace at 100°C;

[0029] (d) at 100% N 2 Perform 80J / cm on the intrinsic amorphous silicon layer of the deposited overdoping source under the atmosphere 2 , 10ms instan...

Embodiment 2

[0033] A method for preparing a c-Si / a-Si / mc-Si structure solar cell, comprising the following steps:

[0034] (a) Provide N-type monocrystalline silicon wafers for cleaning;

[0035] (b) Depositing an intrinsic amorphous silicon layer with a thickness of 85nm on the backlight surface of the N-type single crystal silicon wafer by PECVD, and depositing an intrinsic amorphous silicon layer with a thickness of 85nm on the light-receiving surface;

[0036] (c) Deposit a 180nm phosphorus source layer on the intrinsic amorphous silicon layer on the backlight surface by spin coating, then dry it in a box furnace at 150°C, and spin coat the intrinsic amorphous silicon layer on the light receiving surface. Deposit a 180nm boron source layer on the crystalline silicon layer, and then dry it in a box furnace at 150°C;

[0037] (d) at 100% N 2 Perform 100J / cm on the intrinsic amorphous silicon layer of the deposited overdoping source under the atmosphere 2 , 20ms instant irradiation an...

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Abstract

The invention discloses a c-Si / a-Si / mc-Si solar cell structure and a preparation method thereof; the c-Si / a-Si / mc-Si solar cell structure comprises an N-type monocrystal silicon wafer, intrinsic a-Si layers arranged on light-receiving side and shady side of the N-type monocrystal silicon wafer, a doped P-type mc-Si layer arranged on the light-receiving side intrinsic a-Si layer, a doped N-type mc-Si layer arranged on the shady side intrinsic a-Si layer, ITO transparent conductive film layers arranged on the doped P-type mc-Si layer and the doped N-type mc-Si layer respectively, and a metal grating electrode arranged on the ITO transparent conductive film layers; the doped mc-Si layers are formed through transient irradiation annealing of the intrinsic a-Si layers; the transient irradiation annealing technique combines impurity doping and a-Si crystallization to be finished in 10-20 ms, manufacture steps are simplified, and the c-Si / a-Si / mc-Si solar cell structure is suitable for large-scale production; more importantly, there are intrinsic a-Si layers and the doped mc-Si layers coexisting herein, the passivation advantage of the intrinsic a-Si layers are given to play, the doped mc-Si is used as emitting layer and back field layer material, recombination and series resistance are effectively decreased, and battery performance can be improved.

Description

technical field [0001] The invention relates to the field of silicon solar cell manufacturing, in particular to a c-Si / a-Si / mc-Si solar cell structure and a preparation method thereof. Background technique [0002] As a kind of clean energy, solar cells are attracting more and more attention in promoting the sustainable development of human beings. In terms of manufacturing, one of the eternal themes of solar cells is to reduce costs and improve cell efficiency. In recent years, HIT cells have combined the advantages of crystalline silicon cells and amorphous silicon cells, and have become a hot spot in the field of solar cells due to their high efficiency and stability. [0003] HIT cells are achieved by growing amorphous silicon on crystalline silicon. Firstly, the intrinsic a-Si layer is grown on the front and back sides of the monocrystalline silicon to reduce interfacial recombination, and then a doped P-type or N-type a-Si layer is grown on the intrinsic a-Si layer t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0368H01L31/068H01L31/18
CPCH01L31/03682H01L31/068H01L31/1804Y02E10/546Y02E10/547Y02P70/50
Inventor 李文佳邵剑波王振交李果华朱益清王晓
Owner JIANGNAN UNIV