Powder covering substrate heating CH3NH3PbI3 perovskite film preparation method

A technology of CH3NH3I covering the substrate, applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc., can solve the problems of high process conditions, long reaction time, complicated process steps, etc., and achieve simple and good film forming process absorption effect

Active Publication Date: 2017-01-18
CHANGCHUN UNIV OF SCI & TECH
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] However, the process steps of the prior art are complex and require high process conditions
If CH 3 NH 3 I is heated and vaporized at a higher temperature,

Method used

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  • Powder covering substrate heating CH3NH3PbI3 perovskite film preparation method
  • Powder covering substrate heating CH3NH3PbI3 perovskite film preparation method
  • Powder covering substrate heating CH3NH3PbI3 perovskite film preparation method

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[0009] The powder covered substrate of the present invention heats CH 3 NH 3 PbI 3 The specific implementation of the method for preparing the perovskite film is as follows.

[0010] According to the ratio of 300mg:1mL, PbI 2 The solid powder is dissolved in DMF solvent (N,N-dimethylformamide) and stirred at 60°C for 4-6h to obtain an orange transparent PbI 2 Solution. The PbI 2 The solution is dripped onto the cleaned FTO glass, and thermally spin-coated on the FTO glass in a vacuum spin coater to form a uniform PbI 2 Thin film, then the PbI 2 The film is placed in a drying box and dried at a temperature of 70-100°C for 20-60 minutes.

[0011] Combine HI (hydroiodic acid) with CH 3 NH 2 The solution (methylamine) was added to a round-bottomed flask at a molar ratio of 1:1, stirred in an ice bath for 2 hours, and rotary evaporated at 50°C for 1 hour to obtain CH 3 NH 3 I (methyl amine iodide) initial product. The initial product was washed with ethanol and ether successively, and d...

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Abstract

The invention provides a powder covering substrate heating CH3NH3PbI3 perovskite film preparation method, belonging to the technical field of perovskite solar cell films. The process steps of the prior art are complex, and the requirement of process conditions is high. According to the method, a PbI2 film is prepared on a substrate firstly, and a CH3NH3PbI3 perovskite film is generated by the solid phase reaction of CH3NH3I and PbI2 in the PbI2 film. The method is characterized in that CH3NH3I crystal powders with the particle diameter of 10 to 50 micrometers are evenly spread at the surface of the PbI2 film, the heating is carried out from the substrate and 80 to 100 DEG C solid phase reaction temperature is provided for the CH3NH3I and the PbI2, and the solid phase reaction is completed through 8 to 10 minutes. The preparation method is simple, the process condition is loose, the product film is in a multi-crystalline state, the structure is compact, the crystallinity is high, the grain size reaches a micrometer level, the absorption is good in a visible light band, and the method can be used as a light absorbing material in the field of photovoltaic.

Description

technical field [0001] The invention relates to a powder covered substrate heating CH 3 NH 3 PB 3 Perovskite thin film preparation method by CH 3 NH 3 I(methylammonium iodide) and PbI 2 A low-temperature solid-state reaction between CH 3 NH 3 PB 3 (Methyl lead ammonium iodide) perovskite thin film, the prepared thin film is polycrystalline, with compact structure, high crystallinity, and grain size reaching micron level; the preparation method is simple and the process conditions are loose. The invention belongs to the technical field of perovskite solar battery thin films. Background technique [0002] CH 3 NH 3 PB 3 As a kind of thin film material for solar cells, perovskite film has become an excellent light absorption coefficient, suitable bandgap width, high carrier mobility and double carrier transport characteristics of perovskite semiconductor itself. The photoelectric material can be used as the light absorbing layer and the transport layer in solar cell...

Claims

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Application Information

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IPC IPC(8): H01L51/48
CPCH10K30/10Y02E10/549
Inventor 王晓春丁相宇张希艳柏朝晖卢利平米晓云孙海鹰刘全生王能利
Owner CHANGCHUN UNIV OF SCI & TECH
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