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Preparation method of supported ZnO nano array photocatalysts

A photocatalyst and nanoarray technology, applied in chemical instruments and methods, physical/chemical process catalysts, chemical/physical processes, etc., can solve the problems of limited practical application, difficult recovery, easy deactivation, etc. Recycling, good stability

Inactive Publication Date: 2017-02-15
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] As a photocatalyst, ZnO nanopowder is easy to agglomerate, difficult to separate, difficult to recycle and easy to deactivate, which limits its practical application in photocatalytic technology.

Method used

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  • Preparation method of supported ZnO nano array photocatalysts
  • Preparation method of supported ZnO nano array photocatalysts
  • Preparation method of supported ZnO nano array photocatalysts

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preparation example Construction

[0032] A preparation method of supported ZnO nano-array photocatalyst, comprising the following steps:

[0033] (1) Treatment of the substrate

[0034] At room temperature, the substrate (ITO, metal sheet or glass slide) was ultrasonically treated in washing powder solution, acetone, isopropanol, and ethanol for 15-20 minutes, and then repeated 3 times with distilled water for 15-20 minutes. After washing, blow dry in nitrogen;

[0035] (2) Preparation of ZnO seed layer

[0036] Prepare the seed solution: dissolve polyvinylpyrrolidone in absolute ethanol, stir magnetically for 1 h to obtain solution A, wherein 0.1 g of polyvinylpyrrolidone is dissolved in 8 mL of absolute ethanol; dissolve zinc nitrate hexahydrate in distilled water to obtain solution B, Among them, dissolve 2.98g of zinc nitrate hexahydrate in 2 mL of distilled water; gradually add solution B to A, and the mass ratio of polyvinylpyrrolidone and zinc nitrate hexahydrate is 5:199, and then magnetically stir a...

Embodiment 1

[0041] (1) Treatment of the substrate

[0042] At room temperature, ultrasonically treat ITO in washing powder solution, acetone, isopropanol, and ethanol for 20 minutes, then repeat the ultrasonic treatment for 20 minutes with distilled water three times, wash it and dry it in nitrogen;

[0043] (2) Preparation of ZnO seed layer

[0044] Preparation of seed solution: Dissolve 0.1g of polyvinylpyrrolidone in 8mL of absolute ethanol, stir magnetically for 1h to obtain solution A; dissolve 2.98g of zinc nitrate hexahydrate in 2mL of distilled water to obtain solution B; gradually add solution B to A , and then magnetically stirred at room temperature for 8 hours to obtain the seed solution, and then left to age for more than 48 hours. The substrate treated in step (1) was immersed in the seed solution to pull the coating film at a uniform speed. After the film was coated, the substrate was put into the muffle furnace , heating up to 400° and calcining for 60 minutes to obtain a...

Embodiment 2

[0050] (1) Treatment of the substrate

[0051] At room temperature, ultrasonically treat ITO in washing powder solution, acetone, isopropanol, and ethanol for 15 minutes, then repeat the ultrasonic treatment for 15 minutes with distilled water three times, wash it and dry it in nitrogen;

[0052] (2) Preparation of ZnO seed layer

[0053] Preparation of seed solution: Dissolve 0.1g of polyvinylpyrrolidone in 8mL of absolute ethanol, stir magnetically for 1h to obtain solution A; dissolve 2.98g of zinc nitrate hexahydrate in 2mL of distilled water to obtain solution B; gradually add solution B to A , and then magnetically stirred at room temperature for 10 hours to obtain the seed solution, and then left to age for more than 48 hours, the substrate treated in step (1) was immersed in the seed solution to pull the coating film at a uniform speed, and the substrate was put into the muffle furnace after coating , heating up to 400° and calcining for 60 minutes to obtain a substra...

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Abstract

The invention discloses a preparation method of supported ZnO nano array photocatalysts. The preparation method comprises following steps: 1, sol-gel and lifting film coating are adopted to prepare ZnO seed crystal layers on a washed substrate; 2, the substrate with the ZnO seed crystal layers is subjected to calcination, and then is immersed in a prepared zinc nitrate hexahydrate and hexamethylenetetramine growth solution vertically in a hydrothermal reaction kettle, the hydrothermal reaction kettle is sealed, is delivered into a drying oven for a certain time of reaction at 90 DEG C, and then is cooled via natural cooling or abrupt cooling respectively so as to obtain a uniform nanotube array catalyst or a uniform nanorod array photocatalyst. The preparation method is simple; cost is low; no pollution is caused; large-area double-surface preparation of the nanotube array catalyst or the nanorod array photocatalyst with uniform morphology and excellent photocatalytic properties on different substrates can be realized; and in addition, the tube array specific surface area is relatively large, adsorption capacity is excellent, and the supported ZnO nano array photocatalysts are ideal photocatalysts and photocatalyst compound supported materials.

Description

technical field [0001] The invention belongs to the field of photocatalyst preparation, and in particular relates to a method for preparing a loaded ZnO nanometer array photocatalyst. Background technique [0002] With the rapid development of society and the increase of industrialization, human society is facing increasingly serious environmental pollution problems. Among the many technologies used to control environmental pollution, the method of using photocatalytic oxidation to remove toxic substances in environmental pollution, Because it can completely mineralize pollutants without causing secondary pollution, simple equipment, low cost and other advantages have become a research hotspot. [0003] With the continuous deepening of research on semiconductor properties, semiconductor photocatalysts such as TiO 2 , ZnO, etc. have entered people's sight. ZnO is a new type of wide bandgap II-VI compound semiconductor material. The bandgap at room temperature is about 3.37e...

Claims

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Application Information

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IPC IPC(8): B01J23/06C02F1/30
CPCC02F1/30B01J23/06C02F2305/10B01J35/39
Inventor 胡亚微孔霞王晓芳
Owner SHAANXI UNIV OF SCI & TECH
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