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Application of cu and ce co-doping to improve the photocatalytic performance of zno micron powders

A micron powder, co-doping technology, applied in physical/chemical process catalysts, nanotechnology for materials and surface science, metal/metal oxide/metal hydroxide catalysts, etc., to achieve simple operation, low temperature, The effect of increasing the photocatalytic performance

Inactive Publication Date: 2017-12-19
CHANGAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Research in the prior art shows that the photoluminescence of Ce-doped ZnO is red-shifted, and the photoluminescence of Er-doped ZnO thin films is blue-shifted

Method used

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  • Application of cu and ce co-doping to improve the photocatalytic performance of zno micron powders
  • Application of cu and ce co-doping to improve the photocatalytic performance of zno micron powders
  • Application of cu and ce co-doping to improve the photocatalytic performance of zno micron powders

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Experimental program
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Effect test

Embodiment 1

[0027] The preparation method of the zinc oxide nanomaterial of the present embodiment comprises:

[0028] Step 1: prepare Zn(NO 3 ) 2 ·6H 2 O, Cu(NO with a molar concentration of 0.1mol / L 3 ) 2 ·3H 2 O, Ce(NO at a concentration of 0.1mol / L 3 ) 3 12H 2 O, C with a molar concentration of 0.3mol / L 6 h 8 o 7 ·H 2 O solution, the three solutions were magnetically stirred for 30 minutes;

[0029] Step 2: Quantitative copper solution, then zinc solution is mixed in proportion with 97% and cerium nitrate solution 0 (Zn 0.97 Cu 0.03 (0), the mixed solution was mixed with the prepared citric acid solution, and magnetically stirred for 3 hours to form a sol, and the concentration of citric acid in the sol was 0.3mol / L.

[0030] Step 3: Put the sol in an oven at 80° C. for 13 hours to keep it warm to form a xerogel. Put the dry gel into a 130°C drying oven for 9 hours to keep it warm for dehydration and puffing to obtain the precursor;

[0031] Step 4: Fully grind the pre...

Embodiment 2

[0033] The present embodiment is different from embodiment one in that: quantitative copper solution, then zinc solution is mixed in proportion with 95% and cerium nitrate solution 2% (Zn 0.95 Cu 0.03 Ce 0.02 O).

Embodiment 3

[0035] The present embodiment is different from embodiment one in that: quantitative copper solution, then zinc solution is mixed in proportion with 93% and cerium nitrate solution 4% (Zn 0.93 Cu 0.03 Ce 0.04 O).

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Abstract

The invention relates to the application of Cu and Ce co-doping to improve the photocatalytic performance of ZnO micron powder. The copper solution is quantified by the sol-gel method, and then the zinc solution and the cerium nitrate solution are mixed according to different proportions (Zn0.97-XCu0.03CeXO, X=0.00, 0.02, 0.04, 0.06, 0.08, 0.10), as the doping concentration of the rare earth element Ce increases, the SEM photo analysis of the Zn0.97- Influence, the uniformization of particle size and improvement of dispersion performance of the sample after doping will be beneficial to the suspension and dispersion of the catalyst, and can also promote the absorption of light by the catalyst and the adsorption of reactant molecules, making the photocatalytic performance of the sample better; with As the Ce3+ content increases, the photocatalytic rate of ZnO samples has been significantly enhanced. Moreover, the overall degradation rate changes with time and is close to a straight line, and there is no downward trend as the Ce3+ content increases. It can be guessed that if the Ce3+ content continues to increase, satisfactory photocatalytic effects will be achieved.

Description

technical field [0001] The invention belongs to the field of semiconductor materials, and in particular relates to the application of Cu and Ce co-doping to improve the photocatalytic performance of ZnO micron powder. Background technique [0002] The information industry is gradually entering the era of optoelectronics and photons from the era of microelectronics. Among them, optoelectronic materials are the foundation of the optoelectronic industry. Among optoelectronic materials, wide bandgap semiconductors are widely used in short-wavelength light-emitting devices, submarine optical communications, photocatalysis, and high-density storage. Wide bandgap semiconductor materials such as ZnSe and GaN have been active at the forefront in recent years. Recently, another wide-bandgap semiconductor material, zinc oxide (ZnO), has also attracted people's attention. [0003] As a new type of third-generation semiconductor material, ZnO is an important II-VI semiconductor oxide a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/83
CPCB82Y30/00C01G9/02B01J23/83C01P2004/03C01P2002/72B01J35/39
Inventor 郑佳红牛世峰郑若瑶
Owner CHANGAN UNIV
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