Application of cu and ce co-doping to improve the photocatalytic performance of zno micron powders

A micron powder, co-doping technology, applied in physical/chemical process catalysts, nanotechnology for materials and surface science, metal/metal oxide/metal hydroxide catalysts, etc., to achieve simple operation, low temperature, The effect of increasing the photocatalytic performance

Inactive Publication Date: 2017-12-19
CHANGAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Research in the prior art shows that the photoluminescence of Ce-doped ZnO is red-shifted, and the photoluminescence of Er-doped ZnO thin films is blue-shifted

Method used

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  • Application of cu and ce co-doping to improve the photocatalytic performance of zno micron powders
  • Application of cu and ce co-doping to improve the photocatalytic performance of zno micron powders
  • Application of cu and ce co-doping to improve the photocatalytic performance of zno micron powders

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Experimental program
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Effect test

Embodiment 1

[0027] The preparation method of the zinc oxide nanomaterial of the present embodiment comprises:

[0028] Step 1: prepare Zn(NO 3 ) 2 ·6H 2 O, Cu(NO with a molar concentration of 0.1mol / L 3 ) 2 ·3H 2 O, Ce(NO at a concentration of 0.1mol / L 3 ) 3 12H 2 O, C with a molar concentration of 0.3mol / L 6 h 8 o 7 ·H 2 O solution, the three solutions were magnetically stirred for 30 minutes;

[0029] Step 2: Quantitative copper solution, then zinc solution is mixed in proportion with 97% and cerium nitrate solution 0 (Zn 0.97 Cu 0.03 (0), the mixed solution was mixed with the prepared citric acid solution, and magnetically stirred for 3 hours to form a sol, and the concentration of citric acid in the sol was 0.3mol / L.

[0030] Step 3: Put the sol in an oven at 80° C. for 13 hours to keep it warm to form a xerogel. Put the dry gel into a 130°C drying oven for 9 hours to keep it warm for dehydration and puffing to obtain the precursor;

[0031] Step 4: Fully grind the pre...

Embodiment 2

[0033] The present embodiment is different from embodiment one in that: quantitative copper solution, then zinc solution is mixed in proportion with 95% and cerium nitrate solution 2% (Zn 0.95 Cu 0.03 Ce 0.02 O).

Embodiment 3

[0035] The present embodiment is different from embodiment one in that: quantitative copper solution, then zinc solution is mixed in proportion with 93% and cerium nitrate solution 4% (Zn 0.93 Cu 0.03 Ce 0.04 O).

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Abstract

The invention relates to an application of Cu Ce co-doping in improvement of photocatalysis performance of ZnO micropowder. A copper solution is quantified through a sol-gel method, and then a zinc solution and a cerium nitrate solution are mixed according to different ratios (with a formula being Zn<0.97-X>Cu<0.03>Ce<X>O, and the X being 0.00, 0.02, 0.04, 0.06, 0.08 and 0.10). Along with increases of the doping concentration of Ce that is a rare earth element, SEM photo analysis of the Zn<0.97-X>Cu<0.03>Ce<X>O system proves that doping has certain influences on morphology of ZnO, improvements of dimension uniformity and dispersibility of doped sample particles can facilitate suspension dispersion of a catalyst and can promote light absorption and reactant molecule adsorption by the catalyst so that the photocatalysis performance of a sample is better, and the photocatalysis rate of the ZnO sample is obviously increased along with increases of the doping amount of Ce<3+>. The changing graph of the total degradation rate along with time is near a straight line, and does not trend to decrease along with increases of the doping amount of the Ce<3+>. Assumedly, satisfactory photocatalysis effects are expected to be achieved if the doping amount of the Ce<3+> continues to increase.

Description

technical field [0001] The invention belongs to the field of semiconductor materials, and in particular relates to the application of Cu and Ce co-doping to improve the photocatalytic performance of ZnO micron powder. Background technique [0002] The information industry is gradually entering the era of optoelectronics and photons from the era of microelectronics. Among them, optoelectronic materials are the foundation of the optoelectronic industry. Among optoelectronic materials, wide bandgap semiconductors are widely used in short-wavelength light-emitting devices, submarine optical communications, photocatalysis, and high-density storage. Wide bandgap semiconductor materials such as ZnSe and GaN have been active at the forefront in recent years. Recently, another wide-bandgap semiconductor material, zinc oxide (ZnO), has also attracted people's attention. [0003] As a new type of third-generation semiconductor material, ZnO is an important II-VI semiconductor oxide a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/83
CPCB01J23/83B01J35/004B82Y30/00C01G9/02C01P2002/72C01P2004/03
Inventor 郑佳红牛世峰郑若瑶
Owner CHANGAN UNIV
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