Four-wavelength output semiconductor laser device and preparation method thereof

Abstract

The invention provides a four-wavelength output semiconductor laser device and a preparation method thereof. The laser device is a near-infrared edge-emitting laser device. An existing upper and lower limiting layer structure is replaced with upper and lower DBR bands; and a defect layer is inserted into one-dimensional photonic crystal, so that the effect of limiting light in a photonic band gap on the defect layer is achieved. The four-wavelength output semiconductor laser device specifically comprises a GaAs substrate, a lower DBR layer, a lower matching layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper matching layer, an upper DBR layer, a contact layer, an insulating layer and a P-type electrode, wherein the upper DBR layer and the contact layer are etched to form a ridge waveguide and a dual-electrode structure. Output of four different wavelengths can be obtained through internal mode matching of the semiconductor laser device; the effects of tuning the wavelength of the laser device and converting the working state of the laser device can be obtained through controlling one terminal electrode; and the device based on the structure simultaneously obtains continuous pulse output of 1.069 microns, 1.353 microns, 1.77 microns and 2.71 microns.

Description

technical field [0001] The invention relates to a near-infrared edge-emitting laser, in particular to a four-wavelength output semiconductor laser and a preparation method thereof. Background technique [0002] Lasers with different wavelengths have their unique application ranges. Lasers in the 1-2μm band are used in laser ranging, laser guidance, coherence research, atmospheric research, medical equipment, optical image processing, laser printers, short-distance optical fiber communications, and long-distance optical fibers. There are important applications in communication. The 2-5μm band can be widely used in civil projects such as air pollution monitoring and gas detection. The band above 5μm is often used in military projects such as photoelectric countermeasures. However, due to the limitation of the laser gain material, the laser wavelength is often limited to a specific wavelength. Other special wavelengths can only be obtained by means of optical parametric conver...

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Problems solved by technology

[0004] In addition, due to the limitation of the substrate, GaAs-based lasers are considered unable to emit signals above 1.5 μm, so GaAs-based lasers with the most mature technology cannot be used in the band above 2 μm; and PPLN is used as a nonlinear conversion core device The conversion wavelength range is 0.4-5μm, and there is no way to use it in the band above 5μm, while AlGaAs, as the core device of nonlinear conversion, has a conversion wavelength range of 0.7-17μm, and the second-order nonlinear coefficient is much higher than that of PPLN

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