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Method for manufacturing polycrystal perovskite thin film and solar cell device

A solar cell and perovskite technology, applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problems of many factors affecting the crystallization process, poor film uniformity, and toxic film thickness, etc., to improve process conditions, equipment and Environmental requirements are low, and the effect of improving quality

Active Publication Date: 2017-03-08
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, compared with these methods of promoting perovskite crystallization, they all optimize the precursor solution or improve the process during the film preparation process to improve the morphology of the perovskite film. However, due to the toxicity of common chemical solvents and the uncontrollability of the film thickness, crystallization There are many factors affecting the process, and the uniformity of the obtained film is poor

Method used

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  • Method for manufacturing polycrystal perovskite thin film and solar cell device
  • Method for manufacturing polycrystal perovskite thin film and solar cell device
  • Method for manufacturing polycrystal perovskite thin film and solar cell device

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preparation example Construction

[0037] (2) Preparation of the hole transport layer 3: Treat the dried substrate with UV-ozone for 5 to 10 minutes, then spin coat the hole transport layer on the substrate, preferably poly(3,4-ethylenedi Oxythiophene)-polystyrene sulfonic acid (referred to as PEDOT:PSS). The mass fraction of PEDOT:PSS solution is 25%. Use a homogenizer to spin coat the solution. The rotating speed is selected at 1000rpm-2000rpm. The homogenization time is 30s-60s. The time is 0.2-0.5 hours, and the film thickness is 25-40nm.

[0038] (3) Preparation of the perovskite thin film 4: prepare the perovskite layer 4 on the hole transport layer 3: prepare the perovskite layer by using the method in the present invention. Among them, the polymer chooses poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (referred to as PEDOT:PSS); the salt chooses methyl iodide (referred to as (NH 2 ) 2 CHI), metal halide selective tin iodide (SnI for short 2 ). The first step: the mixed aqueous solution...

Embodiment 1

[0044] now refer to figure 1 , the perovskite solar cell device according to the first embodiment of the present invention has the following structure:

[0045] Glass (plastic) substrate / ITO(100nm) / PEDOT:PSS(30nm) / (NH 2 ) 2 CHSnI 3 (300nm)(10%PEDOT:PSS) / PCBM(8nm) / BCP(10nm) / Ag(120nm)

[0046] (1) Cleaning of glass substrates pre-engraved with ITO: Utilize ethanol, acetone ultrasonic and deionized water ultrasonic methods to clean the transparent conductive substrate 1 (ITO glass), and place it under an infrared lamp to dry after cleaning. Wherein the ITO film on the transparent conductive substrate 1 is used as the anode layer 2 of the device, the square resistance of the ITO film is 15Ω-30Ω, and the film thickness is 80-120nm;

[0047] (2) Preparation of the hole transport layer: Treat the dried substrate with UV-ozone for 5 to 10 minutes, then place it on the KW-4A homogenizer, and use the prepared PEDOT:PSS solution with static batching Method Spin coating to form a fil...

Embodiment 2

[0056] now refer to figure 1 , the perovskite solar cell device according to the second embodiment of the present invention has the following structure:

[0057] Glass (plastic) substrate / ITO(100nm) / PEDOT:PSS(30nm) / (NH 2 ) 2 CHSnI 3 (300nm)(20%PEDOT:PSS) / PCBM(8nm) / BCP(10nm) / Ag(120nm)

[0058] (1) Cleaning of glass substrates pre-engraved with ITO: Utilize ethanol, acetone ultrasonic and deionized water ultrasonic methods to clean the transparent conductive substrate 1 (ITO glass), after cleaning, place it under an infrared lamp to dry, Wherein the ITO film on the transparent conductive substrate 1 is used as the anode layer 2 of the device, the square resistance of the ITO film is 15Ω-30Ω, and the film thickness is 80-120nm;

[0059](2) Preparation of the hole transport layer: Treat the dried substrate with UV-ozone for 5 to 10 minutes, then place it on the KW-4A homogenizer, and use the prepared PEDOT:PSS solution with static batching Method Spin coating to form a film, ...

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Abstract

The invention discloses a method for manufacturing a polycrystal perovskite thin film and a solar cell device. The method includes the steps that a mixed aqueous solution of polymer and salt is subject to wet process film formation on a substrate; and a film acts with metal halide steam mutually to be then subject to heat treatment, and the flat and compact polycrystal perovskite thin film is obtained. By means of the method, the flat and compact polycrystal perovskite thin film can be manufactured, the process is simple, crystallization is rapid, stability and the repetitive rate are high, harms to the environment are avoided, the degree of dependency to the environment is low, and the cost is low.

Description

technical field [0001] The invention belongs to the technical field of organic-inorganic composite solar cells, and relates to a polycrystalline perovskite film, in particular to a method for preparing a polycrystalline perovskite film and a solar cell device. Background technique [0002] In 2013, perovskite solar cells were selected as one of the top ten scientific breakthroughs by the American "Science" magazine. Perovskite, a new type of organic-inorganic composite material, quickly occupied an overwhelming advantage in the field of photovoltaics due to a series of advantages. . [0003] The emergence of organic-inorganic composite perovskite materials can be traced back a century ago, but at the time it was believed that such materials had not been studied much due to the toxicity of lead in them. When in 2009, Japan Miyasaka used perovskite materials (CH 3 NH 3 PB 3 and CH 3 NH 3 PbBr 3 ) As a dye, the power conversion efficiency (PCE) of 3.8% was obtained for t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/58C23C14/06H01L51/42H01L51/00H10K99/00
CPCC23C14/0694C23C14/5806H10K71/12H10K30/10Y02E10/549
Inventor 吴朝新郗俊董化焦博侯洵
Owner XI AN JIAOTONG UNIV
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