Annealing treatment process for PERC battery

An annealing treatment and process technology, which is applied in the field of solar cell manufacturing, can solve the problems of reduced minority carrier lifetime, small temperature curve adjustment space, and low negative charge density, and achieve the effects of improving minority carrier lifetime, overcoming adverse effects, and reducing interfacial recombination

Inactive Publication Date: 2017-03-08
HUNAN RED SUN PHOTOELECTRICITY SCI & TECH
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Problems solved by technology

[0003] In the existing PERC battery preparation process, the high-temperature sintering process is usually used to activate the field effect of aluminum oxide. There are two defects in this process: (1) The time is too short, and the time above 500 ° C is only 20-30 seconds. However, the high temperature time is too short to effectively activate the field effect of Al2O3, that is, the sintering time is too short, the negative charge density in Al2O3 is too low, and the strength of the field effect is not enough to ensure the full play of Al2O3 film. Effective passivation effect
(2) The peak temperature is too high, and the peak temperature reaches

Method used

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  • Annealing treatment process for PERC battery
  • Annealing treatment process for PERC battery
  • Annealing treatment process for PERC battery

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Embodiment 1

[0027] A kind of annealing treatment process of PERC battery of the present invention, comprises the following steps:

[0028] (1) Perform texturing, diffusion, and engraving on silicon wafers. Engraving is the name of a process in the solar cell manufacturing process, also known as "edge isolation" and "secondary cleaning".

[0029] (2) After the silicon wafer is treated in step (1), a PECVD method is used to prepare an aluminum oxide thin film on the back of the silicon wafer with a thickness of 25 nm. The process parameters of the PECVD method used are: trimethylaluminum and laughing gas are used as reactants, the high-frequency power supply is 4000W, the flow rate of trimethylaluminum is 800mg / min, the flow rate of laughing gas is 2500sccm, and the flow rate of argon gas is 600sccm , the reaction temperature is 400°C.

[0030] (3) A silicon nitride film was prepared on the Al2O3 film prepared in step (2) by PECVD method, the thickness of which was 120nm, and a silicon wa...

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Abstract

The invention discloses an annealing treatment process for a PERC battery. The annealing treatment process comprises the following steps of preparing an aluminium oxide thin film on the back surface of a silicon wafer, and performing annealing treatment on the silicon wafer. By performing the annealing treatment on the aluminium oxide thin film in the PERC battery, the interface recombination is lowered, the minority carrier lifetime of the silicon wafer is prolonged, and the adverse effect on the passivation effect of the aluminium oxide thin film in the existing PERC battery preparation process is overcome; and meanwhile, the annealed silicon wafer is prepared into the PERC battery, and the average value of the photoelectric conversion efficiency reaches 21.0%; and compared with the conventional preparation process (without annealing treatment), the photoelectric conversion efficiency is improved by 0.2%, and relatively good electrical performance is achieved.

Description

technical field [0001] The invention belongs to the field of solar cell manufacturing, and in particular relates to an annealing process for PERC cells. Background technique [0002] PERC cell is a new type of high-efficiency solar cell, and a layer of aluminum oxide film is prepared on the back. In the PERC cell, the field effect of aluminum oxide is used to passivate the surface of the silicon wafer, which can improve the minority carrier lifetime of the silicon wafer. [0003] In the existing PERC battery preparation process, the high-temperature sintering process is usually used to activate the field effect of aluminum oxide. There are two defects in this process: (1) The time is too short, and the time above 500 ° C is only 20-30 seconds. However, the high temperature time is too short to effectively activate the field effect of Al2O3, that is, the sintering time is too short, the negative charge density in Al2O3 is too low, and the strength of the field effect is not ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/068H01L31/0216
CPCH01L31/02167H01L31/068H01L31/1804H01L31/1864H01L31/1868Y02E10/547Y02P70/50
Inventor 周子游
Owner HUNAN RED SUN PHOTOELECTRICITY SCI & TECH
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