A thermal insulation material for synthesizing large-grain diamond

A thermal insulation material and diamond technology, which is applied in the field of thermal insulation materials for synthesizing large-grained diamonds, can solve the problems of lack of thermal insulation materials, synthesis devices that cannot reach the temperature, and difficulties in synthesizing large-grained diamonds, and achieve wide sources of raw materials, simple components, and Guaranteed temperature effect

Active Publication Date: 2018-11-20
JIXI HAOSHI NEW ENERGY MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, HPHT technology is mainly used to synthesize artificial diamond, and the temperature gradient method is used to control the synthesis process. The existing HPHT technology is also very mature and widely used in the industrial production of artificial diamond. Artificial diamonds are mainly small-grained diamonds, with a weight of 1 to 2 carats, and the size of semiconductor slices made of small-grained artificial diamonds is less than 3×3mm. Due to the small size of semiconductor slices, it greatly affects the use of diamonds in semiconductors. field application
[0004] Therefore, it is very necessary to synthesize large-grain artificial diamond, but it is still very difficult to synthesize large-grain diamond with the existing technology. As a result, the inside of the chamber of the synthesis device cannot reach the proper temperature, so it is impossible to synthesize large-grain artificial diamonds

Method used

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  • A thermal insulation material for synthesizing large-grain diamond
  • A thermal insulation material for synthesizing large-grain diamond
  • A thermal insulation material for synthesizing large-grain diamond

Examples

Experimental program
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Embodiment 1

[0026] Such as figure 1 Shown is the structural representation of the large-grain diamond synthesis device in the present invention; as figure 2 Shown is a schematic diagram of the current flow during the synthesis process of the large-grain diamond synthesis device in the present invention. A device for synthesizing large-grain diamonds provided by the present invention includes a diamond generating unit, a conductive component unit, a sealing unit, a heat preservation unit and a black body 1 .

[0027] The diamond generating unit includes a first graphite piece 2 , a metal catalyst 3 , a first heat preservation component 4 , and a second heat preservation component 5 . The top of the first graphite piece 2 is in contact with the first heat preservation component 4, and the bottom end of the first graphite piece 2 is in contact with the metal catalyst 3. The first graphite piece 2, the metal catalyst 3 and the first heat preservation component 4 are all placed in the second...

Embodiment 2

[0049] The difference between this embodiment and Embodiment 1 is that the thermal insulation material components used in the third thermal insulation component 11, the fourth thermal insulation component 12 and the fifth thermal insulation component 13 are composed of two high temperature resistant solid metal halide salts and titanium dioxide, Wherein the high temperature resistant solid metal halide salt can be sodium bromide or sodium iodide or potassium iodide or potassium bromide. The preferred two high temperature resistant solid metal halide salts in this embodiment are sodium bromide and sodium iodide, the first high temperature resistant solid metal halide salt is sodium bromide, and the second high temperature resistant solid metal halide salt is iodide Sodium, the first high-temperature-resistant solid metal halide salt, the second high-temperature-resistant solid metal halide salt and titanium dioxide are mixed and compressed according to the weight ratio of 2:2:1 ...

Embodiment 3

[0055] The difference between this embodiment and Embodiment 1 is that the thermal insulation material components used in the third thermal insulation component 11, the fourth thermal insulation component 12 and the fifth thermal insulation component 13 are composed of two high temperature resistant solid metal halide salts and titanium dioxide, Wherein the high temperature resistant solid metal halide salt can be sodium bromide or sodium iodide or potassium iodide or potassium bromide. The preferred two high temperature resistant solid metal halide salts in this embodiment are sodium bromide and sodium iodide, the first high temperature resistant solid metal halide salt is sodium bromide, and the second high temperature resistant solid metal halide salt is iodide Sodium, the first high-temperature-resistant solid metal halide salt, the second high-temperature-resistant solid metal halide salt and titanium dioxide are mixed and compressed according to a weight ratio of 3:2:1 to...

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Abstract

The invention discloses a heat preservation material for synthesis of large-particle diamond. The heat preservation material comprises, by weight, 50%-60% of first solid metal halide salt resistant to high temperature, 20%-33.3% of second solid metal halide salt resistant to high temperature, and 16.7%-25% of titanium dioxide. Compared with the prior art, the heat preservation material has the beneficial effects that components are simple and sources of raw materials are wide; and by arranging the heat preservation material in a diamond synthesis device, it is ensured that the synthesized large-particle diamond cannot be burnt while the synthesis temperature of the large-particle diamond is effectively ensured.

Description

technical field [0001] The invention relates to the technical field of artificial diamond production, in particular to a thermal insulation material for synthesizing large-grain diamonds. Background technique [0002] As the hardest material found in the world today, diamond is mainly used to prepare various diamond tools, such as cutting tools, grinding tools and other advanced tools. In addition, compared with other materials, besides high hardness, diamond has many Excellent properties are gradually discovered and excavated, such as high thermal conductivity at room temperature, extremely low thermal expansion coefficient, low friction coefficient, good chemical stability, large band gap, high sound propagation velocity, semiconductor characteristics and high optical The transmittance makes it have broad application prospects in many fields such as mechanical processing, microelectronic devices, optical windows and surface coatings. In the field of semiconductor material...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J3/06
CPCB01J3/06
Inventor 赵相初林坤峰赵建民刘高峰王艳春姜综博张伟马娜丽齐伟
Owner JIXI HAOSHI NEW ENERGY MATERIALS
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