Aluminum alloy substrate thick film circuit intermediate-temperature sintering dielectric paste and preparation method thereof
A technology of aluminum alloy substrate and dielectric paste, which is applied in the direction of circuits, heterogeneous insulating materials, electrical components, etc., can solve the problem that the breakdown voltage insulation resistance cannot meet the high requirements of aluminum-based electric heating elements, high sintering temperature, and aluminum alloy substrate The problem of less medium slurry and other problems, to achieve the effect of strong adhesion, high breakdown strength, good hardness and flexibility
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Embodiment 1
[0031] A medium-temperature sintering medium slurry for aluminum alloy substrate thick-film circuits, which comprises the following components in weight percent:
[0032] Lead-free glass-ceramic powder 70%
[0033] Y 2 o 3 5%
[0034] Organic binder phase 25%;
[0035] Described lead-free glass-ceramic powder, by weight percentage, comprises following component:
[0036] SiO 2 20%
[0037] Bi 2 o 3 20%
[0038] B 2 o 3 15%
[0039] ZnO 15%
[0040] K 2 O 15%
[0041] SrO 2 10%
[0042] CaO 5%;
[0043] Described organic bonding phase, by weight percentage, comprises following component:
[0044] Butyl Carbitol 60%
[0045] Ethyl cellulose 25%
[0046] Tween-80 3%
[0047] Dibutyl phthalate 3%
[0048] Polymethacrylate 3%
[0049] Polyether modified silicone 3%
[0050] Hydrogenated Castor Oil 3%.
[0051] Through the above-mentioned material ratio, the medium-temperature sintering dielectric slurry for the aluminum alloy substrate thick-film circu...
Embodiment 2
[0061] A medium-temperature sintering medium slurry for aluminum alloy substrate thick-film circuits, which comprises the following components in weight percent:
[0062] Lead-free glass-ceramic powder 75%
[0063] La 2 o 3 5%
[0064] Organic binder phase 20%;
[0065] Described lead-free glass-ceramic powder, by weight percentage, comprises following component:
[0066] SiO 2 20%
[0067] Bi 2 o 3 10%
[0068] B 2 o 3 20%
[0069] ZnO 15%
[0070] K 2 O 15%
[0071] SrO 2 10%
[0072] CaO 10%;
[0073] Described organic bonding phase, by weight percentage, comprises following component:
[0074] N, N-Dimethylformamide 60%
[0075] Polyvinyl butyral 25%
[0076] Tween-80 3%
[0077] Dibutyl phthalate 3%
[0078] Polymethacrylate 3%
[0079] Polyether modified silicone 3%
[0080] Hydrogenated Castor Oil 3%.
[0081] Through the above-mentioned material ratio, the medium-temperature sintering medium slurry for the aluminum alloy substrate thick-fi...
Embodiment 3
[0091] A medium-temperature sintering medium slurry for aluminum alloy substrate thick-film circuits, which comprises the following components in weight percent:
[0092] Lead-free glass-ceramic powder 77%
[0093] Eu 2 o 3 3%
[0094] Organic binder phase 20%;
[0095] Described lead-free glass-ceramic powder, by weight percentage, comprises following component:
[0096] SiO 2 25%
[0097] Bi 2 o 3 15%
[0098] B 2 o 3 10%
[0099] ZnO 15%,
[0100] K 2 O 15%
[0101] SrO 2 10%
[0102] CaO 10%;
[0103] Described organic bonding phase, by weight percentage, comprises following component:
[0104] Mixed Dibasic Ester 60%
[0105] Polyvinylpyrrolidone 25%
[0106] Tween-80 3%
[0107] Dibutyl phthalate 3%
[0108] Polymethacrylate 3%
[0109] Polyether modified silicone 3%
[0110] Thixotropic alkyd resin 3%.
[0111] Through the above-mentioned material ratio, the medium-temperature sintering medium slurry for the aluminum alloy substrate thick-f...
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