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Aluminum alloy substrate thick film circuit intermediate-temperature sintering dielectric paste and preparation method thereof

A technology of aluminum alloy substrate and dielectric paste, which is applied in the direction of circuits, heterogeneous insulating materials, electrical components, etc., can solve the problem that the breakdown voltage insulation resistance cannot meet the high requirements of aluminum-based electric heating elements, high sintering temperature, and aluminum alloy substrate The problem of less medium slurry and other problems, to achieve the effect of strong adhesion, high breakdown strength, good hardness and flexibility

Inactive Publication Date: 2017-04-19
DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, dielectric pastes for thick-film circuits based on stainless steel substrates are mature and commercialized on the market, but there are few dielectric pastes applied to aluminum alloy substrates; The Chinese invention patent of "dielectric slurry for circuit and its preparation method" and the Chinese invention patent with the application number of 201510334158.7 and the patent name of "a kind of dielectric slurry for aluminum substrate thick film circuit insulation and its preparation method" have disclosed It is used for thick-film circuit insulation dielectric paste on aluminum substrate and its preparation method, but the sintering temperature of these aluminum-based dielectric pastes is relatively high, and the breakdown voltage and insulation resistance still cannot meet the high requirements of aluminum-based electric heating elements

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A medium-temperature sintering medium slurry for aluminum alloy substrate thick-film circuits, which comprises the following components in weight percent:

[0032] Lead-free glass-ceramic powder 70%

[0033] Y 2 o 3 5%

[0034] Organic binder phase 25%;

[0035] Described lead-free glass-ceramic powder, by weight percentage, comprises following component:

[0036] SiO 2 20%

[0037] Bi 2 o 3 20%

[0038] B 2 o 3 15%

[0039] ZnO 15%

[0040] K 2 O 15%

[0041] SrO 2 10%

[0042] CaO 5%;

[0043] Described organic bonding phase, by weight percentage, comprises following component:

[0044] Butyl Carbitol 60%

[0045] Ethyl cellulose 25%

[0046] Tween-80 3%

[0047] Dibutyl phthalate 3%

[0048] Polymethacrylate 3%

[0049] Polyether modified silicone 3%

[0050] Hydrogenated Castor Oil 3%.

[0051] Through the above-mentioned material ratio, the medium-temperature sintering dielectric slurry for the aluminum alloy substrate thick-film circu...

Embodiment 2

[0061] A medium-temperature sintering medium slurry for aluminum alloy substrate thick-film circuits, which comprises the following components in weight percent:

[0062] Lead-free glass-ceramic powder 75%

[0063] La 2 o 3 5%

[0064] Organic binder phase 20%;

[0065] Described lead-free glass-ceramic powder, by weight percentage, comprises following component:

[0066] SiO 2 20%

[0067] Bi 2 o 3 10%

[0068] B 2 o 3 20%

[0069] ZnO 15%

[0070] K 2 O 15%

[0071] SrO 2 10%

[0072] CaO 10%;

[0073] Described organic bonding phase, by weight percentage, comprises following component:

[0074] N, N-Dimethylformamide 60%

[0075] Polyvinyl butyral 25%

[0076] Tween-80 3%

[0077] Dibutyl phthalate 3%

[0078] Polymethacrylate 3%

[0079] Polyether modified silicone 3%

[0080] Hydrogenated Castor Oil 3%.

[0081] Through the above-mentioned material ratio, the medium-temperature sintering medium slurry for the aluminum alloy substrate thick-fi...

Embodiment 3

[0091] A medium-temperature sintering medium slurry for aluminum alloy substrate thick-film circuits, which comprises the following components in weight percent:

[0092] Lead-free glass-ceramic powder 77%

[0093] Eu 2 o 3 3%

[0094] Organic binder phase 20%;

[0095] Described lead-free glass-ceramic powder, by weight percentage, comprises following component:

[0096] SiO 2 25%

[0097] Bi 2 o 3 15%

[0098] B 2 o 3 10%

[0099] ZnO 15%,

[0100] K 2 O 15%

[0101] SrO 2 10%

[0102] CaO 10%;

[0103] Described organic bonding phase, by weight percentage, comprises following component:

[0104] Mixed Dibasic Ester 60%

[0105] Polyvinylpyrrolidone 25%

[0106] Tween-80 3%

[0107] Dibutyl phthalate 3%

[0108] Polymethacrylate 3%

[0109] Polyether modified silicone 3%

[0110] Thixotropic alkyd resin 3%.

[0111] Through the above-mentioned material ratio, the medium-temperature sintering medium slurry for the aluminum alloy substrate thick-f...

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Abstract

The invention discloses an aluminum alloy substrate thick film circuit middle-temperature sintering dielectric paste and a preparation method thereof. The preparation method is used for preparing the aluminum alloy substrate thick film circuit middle-temperature sintering dielectric paste. The aluminum alloy substrate thick film circuit middle-temperature sintering dielectric paste comprises the following materials in part by weight: 60%-80% of lead-free microcrystalline glass powders, 1%-10% of rare earth oxide and 19%-30% of organic bonding phase, wherein the lead-free microcrystalline glass powders are formed by SiO2, Bi2O3, B2O3, ZnO, K2O, SrO2 and CaO; and the organic bonding phase is a mixture formed by an organic solvent, a high-polymer thickener, a surfactant, a plasticizer, a dispersant, an antifoaming agent and a thixotropic agent. A dielectric layer formed by printing the dielectric paste on an aluminum alloy substrate has the advantages of large adhesive force, large breakdown strength and high insulation resistance, and is capable of being compatible with a thick film circuit of the aluminum alloy substrate with a resistance paste and an electrode paste.

Description

technical field [0001] The invention relates to the technical field of thick-film circuits, in particular to a medium-temperature sintering medium slurry for aluminum alloy substrate thick-film circuits and a preparation method thereof. Background technique [0002] With the development of multilayer and miniaturization of thick film circuit components, corresponding mechanical and thermal performance requirements are put forward for the substrate, especially the thermal conductivity requirements of the substrate. The aluminum alloy substrate has properties such as low density, good ductility, good thermal conductivity, excellent cold and hot forming properties, and good toughness, which make it possible to be used as a substrate material, but this brings about a thermal expansion coefficient that is different from that of commonly used electronics. Slurry mismatch and other issues. [0003] Aluminum alloy as a substrate material puts forward technical requirements differen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B3/00H01B3/08C03C12/00
CPCH01B3/006C03C12/00H01B3/087
Inventor 高丽萍苏冠贤张念柏
Owner DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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