Anti-electromagnetic interference resistive memory and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GRIMAT ENG INST CO LTD
- Publication Date
- 2019-09-24
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of microelectronics, and in particular relates to an anti-electromagnetic interference resistive memory and a preparation method thereof. Background technique
[0002] Electronic devices such as mobile phones and computers are becoming more and more portable and intelligent, and electronic components are running faster and faster. In the process of transmitting signals and utilizing electric energy of these electronic devices, electromagnetic waves will cause electromagnetic interference to electronic components, affecting the performance and service life of the equipment, accelerating the generation of waste electronic devices, polluting the surrounding environment, and detrimental to human health. An effective solution is to use effective electromagnetic shielding materials, on the one hand to reduce ineffective electromagnetic emissions, and on the other hand to protect devices from external signal interf...