Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Construction and application of multilevel structure ZnO@Au@ZIF-8 compound photoelectrode

A photoelectrode and composite material technology, applied in the direction of electrodes, electrode shapes/types, electrolytic components, etc., can solve problems such as low conductivity, loss of active sites, and decline in catalytic activity, and achieve high yield, easy implementation, and process simple effect

Inactive Publication Date: 2017-04-26
BEIJING UNIV OF TECH
View PDF9 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, MOFs themselves are prone to agglomeration, resulting in loss of active sites and decreased catalytic activity.
In addition, the relatively low conductivity of MOFs also inhibits their application in photocatalytic systems.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Construction and application of multilevel structure ZnO@Au@ZIF-8 compound photoelectrode
  • Construction and application of multilevel structure ZnO@Au@ZIF-8 compound photoelectrode
  • Construction and application of multilevel structure ZnO@Au@ZIF-8 compound photoelectrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The first step: the FTO glass was pretreated with acetone, ethanol and water ultrasonically for 10 minutes, and the ZnO electrode was prepared by a simple hydrothermal method. Specific method: it dissolves zinc acetate in absolute ethanol to prepare 5mM zinc acetate ethanol solution. The above solution was spin-coated onto the pretreated FTO to obtain a layer of seed crystal film, and then annealed at 350°C for 30 minutes. The FTO growing ZnO seed crystals was tilted in a polytetrafluoroethylene reactor filled with the same molar volume of 50mM zinc nitrate and 50mM cyclohexamethylenetetramine, the reaction temperature was 80°C, and the reaction time was 5 hours. After cooling to room temperature, the prepared ZnO electrode was rinsed with deionized water and dried in air.

[0020] Step 2: Dissolve 0.01 g of chloroauric acid tetrahydrate into 15 ml of methanol and 100 ml of water, heat the mixed solution to 60° C. and stir until brown-red to obtain solution B.

[0021...

Embodiment 2

[0023] The FTO was pretreated with acetone, ethanol and water ultrasonic for 10 minutes, respectively, and the ZnO electrode was obtained by a simple hydrothermal method. The specific method: the zinc acetate is dissolved in absolute ethanol to prepare a 10mM zinc acetate ethanol solution. The above solution was spin-coated onto the pretreated FTO to obtain a layer of seed crystal film, and then annealed at 350°C for 30 minutes. The FTO growing ZnO seed crystals was tilted in a polytetrafluoroethylene reactor filled with the same molar volume of 60mM zinc nitrate and 60mM cyclohexamethylenetetramine, the reaction temperature was 95°C, and the reaction time was 12 hours. After cooling to room temperature, the prepared ZnO electrode was rinsed with deionized water and dried in air.

[0024] Step 2: Dissolve 0.1 g of chloroauric acid tetrahydrate into 15 ml of methanol and 100 ml of water, heat the mixed solution to 70° C. and stir until brown-red to obtain solution B.

[0025]...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses construction and application of a multilevel structure ZnO@Au@ZIF-8 compound photoelectrode, and belongs to the technical field of energy storage electrodes. Firstly, ZnO nanorod arrays evenly grow on a conducting glass (FTO) substrate through simple crystal seed coating and water-heating reacting; and secondly, precious metal (Au) in-situ modification and Zn-MOF (metal organic frame) growth are carried out on the ZnO surface, and a ZnO@Au@ZIF-8 compound material is finally prepared. The compound photoelectrode has the wide photoresponse signal, higher stability and excellent photoelectrocatalysis water decomposition performance, and the compound photoelectrode can be applied to photoelectricity water decomposition new energy storage and conversion.

Description

technical field [0001] The invention belongs to the technical field of energy storage electrode materials, and the technology relates to a multi-level structure material constructed by metal oxides, noble metals (Au) and metal-organic framework materials (MOFs), especially the modification of noble metals (Au) based on ZnO nanorod arrays and further Construction of in situ grown MOFs. Background technique [0002] Energy consumption and environmental degradation have become one of the obstacles to economic and social development. Solar energy, as an important clean energy that can replace non-renewable resources (such as coal, oil, natural gas, etc.), has attracted more and more attention. Among them, semiconductor metal oxides (TiO 2 , SnO 2 and ZnO) as photoelectrode materials used in photocatalytic systems can effectively realize the conversion of solar energy to electrical energy or chemical energy. This is mainly due to their advantages of low price, good stability, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C25B11/02C25B11/08C25B1/04C23C18/12B22F9/24B82Y30/00B82Y40/00
CPCB22F9/24B82Y30/00B82Y40/00C23C18/1216C25B1/04C25B11/02C25B1/55C25B11/093Y02E60/36
Inventor 豆义波周健周阿武谢亚勃李建荣
Owner BEIJING UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products