Preparation method for lightning-protection semiconductor material

A technology for semiconductors and preparation steps, applied in the field of lightning protection semiconductor materials, can solve the problems of poor connectivity, accumulation, and poor lightning protection efficiency, and achieve the effects of good compatibility, uniform dispersion, and good lightning protection effect.

Active Publication Date: 2017-05-10
上海矽安光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem mainly solved by the present invention: Aiming at the poor connection between the traditional semiconductor material and the composite material, the local current and ion current on the surface are not equal, which leads to the accumulation of charges on the surface of the semiconductor material and the defects of poor lightning protection efficiency. The invention takes the flake graphite powder after ball milling, adds it to the reaction solution of potassium dichromate and sulfuric acid, soaks the reactant in sodium nitrate, and calcines the calcined product after soaking, mixes it with ferric sulfate and ferric chloride, and reacts with alkali Ferric oxide is generated, crystallized after ultrasonic dispersion, and modified expanded graphite

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0016] Weigh 5g of flake graphite, put it into a ball mill for ball milling, and pass through a 60-mesh sieve to obtain flake graphite powder. Weigh 3g of potassium dichromate and add it to 100mL of 98% sulfuric acid solution by mass fraction, and stir until the solid dissolves to obtain a solution. Add graphite powder into the solution, stir and mix for 40 minutes, then let it stand for 1 hour, and then filter it with suction to obtain the filter residue; add the above filter residue to 30% sodium nitrate solution with a mass fraction of 1:6, soak for 1 hour, and centrifuge to obtain a precipitate The product was washed with deionized water until it was neutral, and then put into an oven, dried at 80°C for 3 hours to obtain the dry product, put into a muffle furnace preheated to 800°C, and kept for calcination for 2 minutes to obtain the calcined product; Weigh 150g of ferric sulfate and 15g of ferric chloride into 600mL of deionized water, stir until the solid dissolves, adju...

example 2

[0019]Weigh 10g of flake graphite, put it into a ball mill, and pass it through a 70-mesh sieve to obtain flake graphite powder. Weigh 5g of potassium dichromate and add it to 150mL of sulfuric acid solution with a mass fraction of 98%, and stir until the solid dissolves to obtain a solution. Add the graphite powder into the solution, stir and mix for 50 minutes, then let it stand for 2 hours, and then filter it with suction to obtain the filter residue; add the above filter residue to the 30% sodium nitrate solution at a mass ratio of 1:6, soak for 2 hours, and centrifuge to obtain a precipitate The product was washed with deionized water until it was neutral, and then put into an oven, dried at 100°C for 5 hours to obtain the dry product, put into a muffle furnace preheated to 900°C, and kept for calcination for 4 minutes to obtain the calcined product; Weigh 160g of ferric sulfate and 20g of ferric chloride into 700mL of deionized water, stir until the solid dissolves, adjus...

example 3

[0022] Weigh 7g of flake graphite, put it into a ball mill for ball milling, pass through a 65-mesh sieve to obtain flake graphite powder, weigh 4g of potassium dichromate and add it to 130mL of 98% sulfuric acid solution by mass fraction, stir until the solid dissolves to obtain a solution, and dissolve the flake graphite Add the graphite powder into the solution, stir and mix for 45 minutes, then let it stand for 1.5 hours, and then filter it with suction to obtain the filter residue; add the above filter residue to the 30% sodium nitrate solution with a mass fraction of 1:6, soak for 1.5 hours, and then centrifuge The precipitate obtained was washed with deionized water until it became neutral, then put into an oven, and dried at 90°C for 4 hours to obtain the dried product, which was put into a muffle furnace preheated to 850°C, and kept for calcination for 3 minutes to obtain the calcined product Take by weighing 155g ferric sulfate and 17g ferric chloride and join in 650m...

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Abstract

The invention discloses a preparation method for a lightning-protection semiconductor material, belonging to the technical field of lightning-protection semiconductor materials. The preparation method provided by the invention comprises the following steps: weighing ball-milled flake graphite powder, adding the ball-milled flake graphite powder into a reaction solution of potassium dichromate and sulfuric acid so as to obtain a reactant, soaking the reactant with sodium nitrate, after the completion of soaking, carrying out calcination so as to obtain a calcined substance, mixing the calcined substance with ferric sulfate and ferric chloride, adding alkali and carrying out a reaction so as to generate ferroferric oxide, carrying out ultrasonic dispersion and crystallization so as to obtain modified expanded graphite, mixing the modified expanded graphite with polyaniline and the like, and carrying out granulation so as to obtain the lightning-protection semiconductor material. According to the invention, the flake graphite powder is used as a raw material, and the surface of the flake graphite powder is modified and loaded with nanometer ferroferric oxide, so excellent performances like electric conduction, lubrication and shapability can be achieved; charges accumulated on the surface of the semiconductor material can be remotely migrated at a constant speed; the disadvantage of imbalance of local current and ionic current on the surface of a traditional semiconductor material can be compensated; and instance results prove that the lightning-protection semiconductor material provided by the invention has the advantages of good adhesiveness with a composite material, excellent lightning-protection effect and wide economic prospects.

Description

technical field [0001] The invention discloses a method for preparing a lightning protection semiconductor material, which belongs to the technical field of lightning protection semiconductor materials. Background technique [0002] There are millions of lightning strikes in nature every year, and the lightning disaster is one of the ten most serious natural disasters announced by the United Nations International Decade for Disaster Reduction. The latest statistics show that the loss caused by lightning has risen to the third place of natural disasters. Every year, lightning strikes cause countless casualties and property losses around the world. Semiconductor is an indispensable material in the development of contemporary human industry. Generally speaking, a semiconductor refers to a material whose conductivity at room temperature is between that of a conductor and an insulator. Semiconductors have a wide range of applications in radios, televisions, and temperature meas...

Claims

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Application Information

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IPC IPC(8): C08L79/02C08K9/02C08K7/24C08K5/5435C08K5/50H01B7/28
CPCC08K5/50C08K5/5435C08K7/24C08K9/02C08L2203/202H01B7/2813C08L79/02
Inventor 许斌徐越陆娜
Owner 上海矽安光电科技有限公司
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