High-efficiency preparation method for nitrogen-doped titanium dioxide film
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A titanium dioxide and nitrogen doping technology is applied in the field of photocatalytic materials to achieve the effects of good photocatalytic effect, high film quality and fast deposition rate
Inactive Publication Date: 2017-05-10
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD +1
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[0006] The purpose of the present invention is to provide a high-efficiency nitrogen-doped titaniu
Method used
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Embodiment 1
[0026] Such as figure 1 As shown, in the magnetron sputtering chamber, the glass substrate is set on the anode, TiO 2 The ceramic target is set on the cathode, the RF power supply is connected to the matcher and then connected to the filter together with the DC power supply, and the filter is directly connected to the cathode. The RF power and the DC power together supply power to the cathode.
[0027] A high-efficiency nitrogen-doped titanium dioxide film according to the present invention is prepared through the following steps:
[0028] (1) Cleaning of the surface of the glass substrate: select a glass substrate with a thickness of 1.1mm and put it into an ultrasonic cleaner, first use acetone for 20 minutes, then use alcohol for 20 minutes, and finally use deionized water for 20 minutes. 2 blow dry.
[0029] (2) Take out the glass substrate and put it into the magnetron sputtering equipment (anode), target (cathode): TiO 2 Ceramic target (99.99% pure);
[0030] The pr...
Embodiment 2
[0039] (1) Cleaning of the surface of the glass substrate: select a glass substrate with a thickness of 0.7mm and put it into an ultrasonic cleaning machine, first use acetone for 20 minutes, then use alcohol for 20 minutes, and finally use deionized water for 20 minutes, and use high-pressure N 2 blow dry.
[0040] (2) Take out the glass substrate and put it into a magnetron sputtering device to deposit a nitrogen-doped titanium dioxide film. The preparation process parameters are as follows:
[0041] Target material: TiO 2 Ceramic target (purity: 99.99%)
[0042] Background vacuum≤8×10 -4 Pa;
[0043] Working pressure: 6×10 -1 Pa;
[0044] DC sputtering power: 75W;
[0045] RF sputtering power: 175W;
[0046] Sputtering process gas Ar flow: 25sccm;
[0047] Reactive gas N 2 Flow rate: 6 sccm;
[0048] Deposition coating thickness: 500nm.
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Abstract
The invention discloses a high-efficiency preparation method for a nitrogen-doped titanium dioxide film. The method comprises the steps that (1) a glass substrate is cleaned and then blow-dried by using high-pressure N2; and (2) the nitrogen-doped titanium dioxide film is deposited by adopting a direct-current coupling radio-frequency magnetron sputtering method, namely, a radio-frequency power supply is connected to a matcher and then together with a direct-current power supply is connected to a wave filter, wherein the wave filter is directly connected to a cathode, and the radio-frequency power supply and the direct-current power supply are used for supplying power to the cathode. According to the high-efficiency preparation method of the nitrogen doped titanium dioxide film, the nitrogen-doped titanium dioxide film is deposited by adopting the direct-current coupling radio-frequency magnetron sputtering method so that the film with a high deposition rate and high film quality can be obtained, the technology is simple, the conditions are easy to control, the preparation period is short, scale preparation is easy, and the prepared nitrogen doped titanium dioxide film is high in crystallinity, firm in combination with a substrate, good in stability and reusable.
Description
technical field [0001] The invention belongs to the technical field of photocatalytic materials, and in particular relates to a method for preparing a high-efficiency nitrogen-doped titanium dioxide film. [0002] technical background [0003] Semiconductor photocatalytic materials can degrade a variety of toxic and harmful pollutants due to their strong oxidation ability. At the same time, they are environmentally friendly, can use solar energy, have mild reaction conditions, and low cost, making them have extremely broad application prospects and are increasingly popular in China. wide attention of foreign scholars. Among them, TiO 2 It is one of the wide-bandgap semiconductor materials with the most application potential at present, especially the ability of photoexcitation to generate electron-hole pairs is widely used in the field of photocatalysis. [0004] But due to TiO 2 The bandgap width is large, and its photocatalysis can only be excited under ultraviolet light...
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IPC IPC(8): C23C14/35C23C14/08C23C14/02
CPCC23C14/35C23C14/021C23C14/083
Inventor 彭寿马立云杨勇姚婷婷李刚金克武沈洪雪王天齐甘治平徐根保
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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