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Photopatternable compositions, patterned high k thin film dielectrics and related devices

An optoelectronic device and patterning technology, which is applied in the photoengraving process of the pattern surface, photosensitive materials for opto-mechanical equipment, optics, etc., and can solve the problems of unfavorable performance, breakdown, and current-voltage hysteresis of electronic devices.

Active Publication Date: 2017-05-10
FLEXTERRA INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, cross-linking reactions involving peroxides are known to form undesired ionic species as by-products which, if remaining within the cross-linked network, can cause problems related to leakage currents (breakdown, current -voltage hysteresis, bias stress), and thus detrimental to the performance of electronic devices

Method used

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  • Photopatternable compositions, patterned high k thin film dielectrics and related devices
  • Photopatternable compositions, patterned high k thin film dielectrics and related devices
  • Photopatternable compositions, patterned high k thin film dielectrics and related devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0112] Example 1. P(VDF-TrFE-CFE) based composition, film fabrication and photocuring

[0113] This example illustrates the photocrosslinkability of various embodiments of the P(VDF-TrFE-CFE) based photopatternable composition. Formulations with different photosensitive non-nucleophilic bases and crosslinkers were tested against a control formulation with no crosslinker or photosensitive nonnucleophilic base and a crosslinker only but no photosensitive nonnucleophilic base. Nucleophilic base control formulations were compared.

[0114]A photopatternable composition based on P(VDF-TrFE-CFE) according to the teachings of the present invention was prepared as follows: ∼60-100 mg of P[(VDF)x-(TrFE)y-(CFE)z](x =59-65%; y=29-33%; z=6-8%) was dissolved in 1 ml of cyclopentanone, followed by addition of the photosensitive non-nucleophilic base (about 1-5% by weight) and the cross-linking agent (approximately 3-10% by weight) and stirred for at least one hour before spin coating. Th...

Embodiment 2

[0123] Example 2. Photopatternable performance and via formation of P(VDF-TrFE-CFE) based compositions

[0124] The dielectric film exposed to UV light through a photomask, when developed with the solvent used for spin coating, showed a clear pattern in the negative image of the photomask. Figure 5 a represents an optical micrograph of a 250 μm x 250 μm sized via hole opened in the P(VDF-TrFE-CFE) film through the photomask with well-defined edges. A line scan through a representative via is shown in Figure 5 b.

Embodiment 3

[0125] Embodiment 3. Based on P (VDF-HFP) assembly, thin film preparation and photocuring

[0126] This example illustrates the photocrosslinkability of various embodiments of the P(VDF-HFP) based photopatternable composition. Formulations with different photosensitive non-nucleophilic bases and crosslinkers were tested and compared to a control formulation containing no crosslinker and no photosensitive nonnucleophilic base.

[0127] A P(VDF-HFP)-based photopatternable composition according to the teachings of the present invention was prepared as follows: ~60-100 mg of P(VDF-HFP) was dissolved in 1 mL of cyclopentanone, followed by addition of the photosensitive non- The nucleophilic base (approximately 1-5% by weight) and the crosslinker (approximately 3-10% by weight) are stirred for at least one hour before spin coating. The composition was spin-coated onto a clean ITO substrate at 1000-4000 rpm to give a film thickness in the range of about 400-700 nm. Before using, in...

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Abstract

The present teachings relate to a photopatternable composition including a vinylidene fluoride-based polymer, a photosensitive non-nucleophilic base, and a crosslinking agent. The photopatternable composition can be used to prepare a patterned thin film component for use in an electronic, optical, or optoelectronic device such as an organic thin film transistor. The patterned thin film component can be used as a gate dielectric with a high dielectric constant, for example, a dielectric constant greater than 10.

Description

technical field [0001] The present invention relates to photopatternable compositions, patterned high-k thin-film dielectrics, and related devices. Background technique [0002] There has been a higher interest in the research of high-k dielectric materials for reducing the operating voltage required for new flexible / printed electronics technologies. For example, as far as the field effect transistor (OFET) is concerned, although according to the conventional SiO 2 Devices with dielectrics (k≈4, dielectric thickness ~200-300nm) typically operate at voltages between 30-50V, while devices based on conventional organic dielectrics (k<10) typically operate at voltages between 50- However, recent studies have demonstrated that OFETs with high-k (eg, k>10) gate dielectrics can operate at very low voltages (≤40V). [0003] Various metal oxides with high dielectric constants have been investigated as SiO for use in OFETs 2 Alternatives to gate dielectrics. However, most of...

Claims

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Application Information

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IPC IPC(8): H01L51/00G03F7/038G03F7/004C08K5/00C08F214/22H01L51/05H01L51/52
CPCC08F214/22C08F214/222C08K5/00G03F7/0045G03F7/0046G03F7/0384H10K85/141H10K10/471H10K50/30G03F7/038C09D127/16C08K5/18C08K5/3437C08L83/08C08K5/0025C08K5/16C08K5/3435C08K5/45H10K10/464H10K10/466G03F7/162G03F7/2002G03F7/32G03F7/38
Inventor 赵薇A·法切蒂郑焱A·斯特芬尼M·利瓦C·索尔达诺M·穆西尼
Owner FLEXTERRA INC