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Circuit for controlling the slew rate of the high-side switching element

A technology of switching elements and high-side switches, applied in the direction of electronic switches, electrical components, electronic commutators, etc., can solve the problem of not allowing the conversion rate to be continuously controlled

Active Publication Date: 2021-04-23
RENESAS ELECTRONICS EURO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, like the first commonly used driver circuits, this driver circuit does not allow the slew rate to be continuously controlled

Method used

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  • Circuit for controlling the slew rate of the high-side switching element
  • Circuit for controlling the slew rate of the high-side switching element
  • Circuit for controlling the slew rate of the high-side switching element

Examples

Experimental program
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Effect test

Embodiment Construction

[0035] refer to image 3 , shows a system 1 for controlling and driving one or more loads 2 . The load 2 can be, for example, a coil in a motor, a coil in a solenoid or a relay, a heating element or another form of load with a complex impedance Z. The system 1 may be used to control a three-phase motor - ie a motor with three loads 2, or other types of multi-phase equipment.

[0036] The system 1 comprises a controller 3 such as a microcontroller, a pre-driver integrated circuit (IC) 4 and a load switch 5 for the or each load 2 .

[0037] The load switch 5 includes a high-side switching element 6 in the form of an n-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) (also referred to herein as an "nMOSFET" or simply an "nMOS transistor") .

[0038] The nMOS transistor 6 may be a discrete component or may be integrated into the load switch IC or into the pre-driver IC 4 . The nMOS transistor 6 is configured as a source follower. The drain D of nMOS tr...

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PUM

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Abstract

A circuit (11) for controlling the slew rate of a high-side switching element (6) in a load switch (5) is described. The circuit includes a variable current source (20) for setting the slew rate. The circuit also includes an amplifier (15) including a first input coupled to a fixed voltage source (19), a second input coupled to a variable current source, and an output (18) of a drive signal. A feedback path (26) from the input terminal (13) connected or connectable to the output (14) of the switching element to the second input of the amplifier comprises a series voltage differential element, such as a capacitor (27).

Description

technical field [0001] The present invention relates to a circuit for controlling the slew rate of a high-side switching element, in particular to an n-channel power metal-oxide-semiconductor field-effect transistor. Background technique [0002] Power semiconductor devices such as power metal oxide semiconductor field effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs) may be used as switching elements (or "switches") for switching loads. [0003] Driver circuits are used to apply signals to the gates of power semiconductor devices in order to switch the devices between OFF and ON states. The switching speed of the device (herein referred to as "slew rate") may be controlled so as to be fast enough to reduce power loss, but slow enough to avoid high frequency transients that may cause radiated electromagnetic interference. [0004] figure 1 is a schematic diagram of the first commonly used driver circuit for switching a load Z for a high-side n-cha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/16
CPCH03K17/166H03K2217/0063H03K2217/0036H03K5/04H02P6/14
Inventor 汉斯-约尔根·布劳恩
Owner RENESAS ELECTRONICS EURO