Sterile grafting method of Arabidopsis/thellungiella halophila
A technology for Arabidopsis thaliana and salt mustard, applied in the directions of grafting, horticultural methods, botanical equipment and methods, etc., can solve the problems of large differences in the survival rate of grafted bodies, increased difficulty in grafting, and different survival rates of grafting, and achieves low cost. , The method is simple and easy to implement, and the effect is high
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0049] Embodiment 1: the aseptic grafting method of Arabidopsis / Salina thaliana
[0050] Specific steps are as follows:
[0051] (1) Preparation of rootstock and scion material: at first be the sodium hypochlorite disinfection of full-grained Chinese Shandong Dongying small salt mustard (Thellungiella halophila) seed and sow on agar powder (Sigma agar) concentration (here The "concentration" is the mass fraction of agar in the medium, the same below) is 1.2% 1 / 2MS medium (domestic medium), and this process is operated on a sterile ultra-clean bench. After 1 week of stratification at 4°C, place them in a long-day light incubator for vertical culture and germination. The seeds of Arabidopsis thaliana (Arabidopsisthaliana) were sterilized and sown on the 1 / 2MS medium (domestic medium) with agar powder (Sigma agar) concentration of 1.2% with the same disinfection method as that of Salt mustard. Bacteria ultra-clean bench operation. Stratified at 4°C or placed directly in a long...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com