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Plasma lenses, air bearings, flying heads, nanofabrication systems and applications

An air bearing and plasma technology, applied in the field of nano-processing, can solve the problems of complex processing equipment, low processing efficiency, and cost a lot of money, and achieve the effects of high processing resolution, high processing efficiency, and low manufacturing cost

Active Publication Date: 2019-05-28
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitation of the optical diffraction limit, it is difficult for the existing optical exposure technology to achieve a lithographic resolution below 16nm.
Moreover, since the processing equipment such as the ultra-short wavelength extreme ultraviolet exposure machine is different from the traditional ones, the development process requires a lot of money
In addition, the 16nm node technology makes the production of masks more difficult
Molecular self-assembly, nanoimprinting, focused ion beam lithography, electron beam exposure, scanning probe technology, extreme ultraviolet exposure, immersion exposure, and near-field optical exposure technologies have the ability to achieve half-pitch processing below 16nm, but there are processing Defects such as complex equipment, expensive production costs and low processing efficiency

Method used

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  • Plasma lenses, air bearings, flying heads, nanofabrication systems and applications
  • Plasma lenses, air bearings, flying heads, nanofabrication systems and applications
  • Plasma lenses, air bearings, flying heads, nanofabrication systems and applications

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0092] In this example, in the inorganic thermosensitive photoresist TeO 1.14 The surface is processed by photolithography with the help of nanofabrication system. Specifically, in this embodiment, the structure of the air bearing is as Figure 4 As shown; the plasma lens contains 9 circular grooves, and the material of the metal thin film on the surface of the plasma lens is Cr and the thickness is 30nm, the diameter of the central small hole is 5nm, the groove period of the circular groove is 300nm, and the groove width is 100nm ; The substrate of the flight head is quartz; the beam spot is 30nm.

[0093] The specific operation steps are as follows: adjust the spindle speed to 10000rmp, and wait for the plasma flight head to be in TeO 1.14 When the surface of the photoresist is flying stably, the plasma flying head is moved to the flying height of the disk by the voice coil motor, and the linear velocity at this time is 11.3m / s; then the linearly polarized light with a wav...

Embodiment 2

[0098] In this embodiment, according to the substantially same processing method as in embodiment 1, the inorganic heat-sensitive photoresist TeO with a thickness of 40nm 1.14 The surface is processed by photolithography with the help of nanofabrication system. The difference is that, in this embodiment, the inorganic heat-sensitive photoresist TeO on the substrate surface 1.14 The ratio of argon to oxygen during sputtering preparation is adjusted so that the photoresist TeO 1.14 The sensitivity of the plasma lens is reduced; the thickness of the metal film of the plasma lens is 40nm, the diameter of the central hole is 10nm, the groove period of the circular groove is 350nm, and the groove width is 150nm; the beam spot is 15.8nm; and the spindle speed is 5400rmp.

[0099] The photoresist sample after the photolithographic processing of this embodiment, the result observed under the scanning electron microscope is as follows: Figure 12 shown.

[0100] Figure 12 .a is the...

Embodiment 3

[0102] In this embodiment, according to basically the same processing method as in Embodiment 1, photolithographic processing is performed on the surface of the chemically amplified molecular glass glue FPT-8Boc of the organic photoresist by means of a nanofabrication system. The difference is that in this embodiment, the thickness of the metal thin film of the plasma lens is 100nm, the diameter of the central hole is 20nm, the groove period of the circular groove is 400nm, and the groove width is 200nm; the beam spot is 25nm, and the spindle speed is 1000rmp and, the processed disc is baked in a 100°C oven for 60s to prevent excessive diffusion of the acid generator, and then the disc is taken out of the oven and left at room temperature, and then placed in a developer solution of tetramethylammonium hydroxide For 60 seconds, use a glass rod to stir the developer to make it fully reflect with the exposure area, take out the disk and rinse it with deionized water to remove the ...

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Abstract

The invention provides a plasma lens, an air bearing, a flying head, and a nano processing system and application thereof; the plasma lens for a flying head comprises: a base with the surface provided with a metal film; a center pore formed in the surface of the base and running through the metal film; and a plurality of circular grooves formed in the surface of the base and running through the metal film, with the circular grooves and the center pore forming concentric circles, wherein the metal film is 30-100 nm in thickness, and the multiple circular grooves are 300-400 nm in groove cycle and 100-200 nm in groove width. The plasma lens provided herein can reduce focusing spots and enhancing light intensity so that photoetching focusing light is limited in a smaller range.

Description

technical field [0001] The invention relates to the technical field of nano-processing, in particular, the invention relates to a plasma lens, an air bearing, a flying head, a nano-processing system and applications thereof. Background technique [0002] At present, the manufacture of integrated circuits adopts optical exposure technology. In order to improve the resolution of lithography, the exposure technology has experienced the evolution from contact exposure, proximity exposure, scanning projection exposure to double pattern exposure. However, due to the limitation of the optical diffraction limit, it is difficult for the existing optical exposure technology to achieve a lithographic resolution below 16nm. Moreover, since the processing equipment such as the ultra-short-wavelength extreme ultraviolet exposure machine is different from the traditional ones, the development process requires a lot of money. In addition, the 16nm node technology makes the production of ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B3/00F16C32/06B82B3/00B82Y40/00G03F7/20
CPCB82B3/0004B82Y40/00F16C32/0603F16C2370/20G02B3/00G03F7/2049
Inventor 孟永钢胡跃强纪佳馨王鸿栋
Owner TSINGHUA UNIV
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