Method for producing indium phosphide back hole

Abstract

The invention provides a method for producing an indium phosphide back hole. The method comprises the following steps: step (1), producing a metal barrier layer at a position of the front of a indium phosphide wafer where the back hole needs to be configured, and finishing a front process; step (2), bonding the front of the wafer to a temporary slide sapphire, and thinning and polishing the back of the wafer; step (3), photoetching a back hole figure at the back of the wafer, ensuring that the back hole position is consistent with the front metal barrier layer, and forming an etching mask; step (4), rising the back helium temperature of an STS ICP dry etching machine to 190 DEG C, using the combined gas of chlorine (C12) and argon Ar to perform dry etching, until etching to the front metal barrier layer; step (5), removing the etching mask; and step (6), sputtering a seed layer at the back, electroplating a back gold and filling the back hole, and then finishing the back hole production. The method for producing the indium phosphide back hole provided by the invention has the following advantages that the problem of etching an indium phosphide deep hole has been solved; the back hole morphology, the etching repeatability and the coherence are all very good; and meanwhile, the process is simple and can be compatible with the GaAs process, thus the method is suitable for large-scale popularization and application.

Description

technical field [0001] The invention relates to a method for manufacturing an indium phosphide back hole, which belongs to the technical field of semiconductor integrated circuits. Background technique [0002] Indium phosphide (InP) devices have superior characteristics such as ultra-high speed and low power consumption, and have great potential in the manufacture of high-speed millimeter-wave monolithic integrated circuits (MMICs) and submillimeter-wave monolithic integrated circuits (SMMICs). They are broadband As a key component of wireless communication systems and terahertz imaging systems, it has attracted widespread attention. The back hole is a key process of MMIC manufacturing. By thinning the wafer substrate and opening the substrate to form a ground via, it can effectively reduce the parasitic inductance and ground resistance, and can better dissipate heat. After the introduction of backholes, people have manufactured high-performance GaAs circuits, forming a re...

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Problems solved by technology

[0004] High-temperature etching has certain requirements for a series of related backside processes, such as the bonding separation mechanism and the selection of etching masks. It also poses challenges to the control of backhole morphology, etch uniformity and repeatability. Makes the production of InP back holes a difficult problem

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