Short-process integral device and method for preparing continuous tungsten core SiC fibers by direct-current heating method

A heating method and short-process technology, which is applied in fiber treatment, gaseous chemical plating, textiles and papermaking, etc., can solve problems such as different working temperatures and affecting fiber quality, and achieve improved performance stability, high fiber strength, and shortened preparation. The effect of the process

Active Publication Date: 2017-05-31
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the suitable working temperature of each process is different. If different processes are in the same reactor, the reaction gas may interact and affect the fiber quality.

Method used

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  • Short-process integral device and method for preparing continuous tungsten core SiC fibers by direct-current heating method
  • Short-process integral device and method for preparing continuous tungsten core SiC fibers by direct-current heating method
  • Short-process integral device and method for preparing continuous tungsten core SiC fibers by direct-current heating method

Examples

Experimental program
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Effect test

Embodiment 1

[0039] Step 1: Lead the tungsten wire out of the tension device, enter the integrated reactor through the upper threading hole, and then pass out through the lower threading hole, and fix it on the wire receiving disc. Simultaneously feed high-purity argon gas into the air inlets on the tungsten wire cleaning section and the coating deposition section to evacuate the air in the integrated reactor. The tension of the wire is controlled at 2.0×10 -3 N·m.

[0040] Step 2: After removing the air, inject hydrogen gas from the air inlet on the tungsten wire cleaning section to clean the tungsten wire, the gas flow rate is 0.08L / min; the volume ratio of the mixed gas injected into the upper air inlet of the SiC deposition section is: Hydrogen accounts for 7% of the total volume, methyldichlorohydrosilane accounts for 7% of the total volume, and the balance is monomethyltrichlorosilane, and the flow rate of the mixed gas is 2L / min. The volume ratio of the mixed gas introduced into t...

Embodiment 2

[0043] The difference between the method of making SiC fibers and that of Example 1 is that the gas flow rate changes in steps 2 and 3, and the specific changes are as follows:

[0044] Step 2: After removing the air, introduce hydrogen gas from the air inlet on the tungsten wire cleaning section, the gas flow rate is 0.15L / min; the volume ratio of the mixed gas injected into the upper air inlet of the SiC deposition section is: hydrogen accounted for the total volume 10%, methyldichlorohydrosilane accounts for 9% of the total volume, the balance is monomethyltrichlorosilane, and the flow rate of the mixed gas is 3L / min. The volume ratio of the mixed gas introduced into the air inlet in the middle of the SiC deposition section is: argon accounts for 10% of the total volume, methyldichlorohydrosilane accounts for 25% of the total volume, and the balance is monomethyltrichlorosilane. The mixed gas flow rate is 2.5L / min. The volume ratio of the mixed gas introduced from the gas ...

Embodiment 3

[0047] The difference between the preparation of SiC fibers and Example 1 is that the tension changes in step 1, and the gas flow changes in steps 2 and 3 also change. The specific changes are as follows:

[0048] The tension of the tungsten wire in step 1 is controlled at 5.0×10 -3 N·m.

[0049] Step 2: After the air is removed, hydrogen gas is introduced from the air inlet on the tungsten wire cleaning section, and the gas flow rate is 0.20L / min; the volume ratio of the mixed gas introduced into the upper air inlet of the SiC deposition section is: hydrogen accounts for 1% of the total volume 15%, methyldichlorohydrosilane accounts for 10% of the total volume, and the balance is monomethyltrichlorosilane, and the flow rate of the mixed gas is 3.5L / min. The volume ratio of the mixed gas introduced into the air inlet in the middle of the SiC deposition section is: argon accounts for 18% of the total volume, methyldichlorohydrosilane accounts for 26% of the total volume, and t...

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Abstract

The invention discloses a short-process integral device and a method for preparing continuous tungsten core SiC fibers by a direct-current heating method, and belongs to the technical field of preparation of SiC fibers. Firstly, a tungsten wire penetrates through an integral reactor specifically designed; and the reactor is mainly divided into three sections: the front end is a tungsten wire cleaning end section; the middle is a SiC deposition section; and the tail end is a coating deposition section. The tungsten wire is heated by a direct-current power supply; the concentration field and temperature field distribution suitable for SiC deposition stable growth can be obtained through adjusting the flow, the flowing speed and the ratio of reaction gas introduced in each section, so that the fine grain structure of the SiC fibers is guaranteed, and the high-performance SiC fibers are prepared. The method has the following advantages: the tungsten wire cleaning, the SiC deposition and the coating preparation are integrated; the space can be largely saved; the process is shortened; the production efficiency is improved; and the cost is reduced.

Description

technical field [0001] The invention relates to the technical field of SiC fiber preparation, in particular to a short-flow integrated device and method for preparing continuous tungsten-core SiC fibers by a direct current heating method. Background technique [0002] The rapid development of aviation, aerospace and other fields has put forward higher and more requirements for materials, and it is difficult for a single material system to meet the requirements. New composite materials will receive much attention and a large number of applications. As one of the reinforcements, the continuous monofilament SiC fiber is a high-tech product, which has the advantages of high specific strength, high specific modulus, corrosion resistance, wear resistance, and good thermal stability. It is suitable for reinforcing resins, metals, and ceramics. A variety of substrates can be used to prepare various composite material structural parts such as magnesium-based composite satellite dete...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/32C23C16/54C23C16/455D06M11/79D06M11/74
CPCC23C16/325C23C16/455C23C16/545D06M11/74D06M11/79
Inventor 王玉敏杨青张国兴张旭杨丽娜杨锐
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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