High withstand voltage semiconductor discrete device chip secondary etching mesa process
A technology of discrete devices and semiconductors, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting the filling effect of glass frit on V-shaped grooves, lower product breakdown voltage, and affect product reliability, etc., to achieve Effects of reducing surface leakage, improving dielectric strength, and increasing contact capability
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Embodiment 1
[0025] The steps of the secondary corrosion mesa process for the high withstand voltage semiconductor discrete device chip are as follows:
[0026] 1. If figure 1 As shown, a V-shaped groove is etched on the surface of the silicon wafer 1 with an oxide layer 2 on the surface with a mixed acid solution, and the thickness of the oxide layer on the surface of the silicon wafer is dsio 2 The mixed acid solution is a mixed solution of nitric acid, hydrofluoric acid, and glacial acetic acid, with a volume ratio of 5:3:2. The container containing the mixed acid solution is placed in the mixed solution of ice and water, and the silicon chip is timed in the mixed acid solution. In 3 minutes, the corrosion depth of the measuring groove reaches 75 μm, and the width reaches 180 μm, forming a corrosion table 3 .
[0027] 2. If figure 2 As shown, after the silicon wafer 1 forming the primary etching mesa 3 is subjected to photolithographic masking, the V-shaped groove is subjected to sec...
Embodiment 2
[0036] The steps of the secondary corrosion mesa process for the high withstand voltage semiconductor discrete device chip are as follows:
[0037] 1. If figure 1 As shown, a V-shaped groove is etched with a mixed acid solution on the surface of the silicon wafer with an oxide layer 2 on the surface, and the thickness of the oxide layer on the surface of the silicon wafer is dsio 2 The mixed acid solution is a mixed solution of nitric acid, hydrofluoric acid, and glacial acetic acid, with a volume ratio of 5:3:2. The container containing the mixed acid solution is placed in the ice-water mixed solution, and the silicon chip is timed in the mixed acid solution. In 4 minutes, the corrosion depth of the measuring groove reaches 85 μm, and the width reaches 200 μm, forming a corrosion table 3 .
[0038] 2. If figure 2 As shown, after the silicon wafer 1 forming the primary etching mesa 3 is subjected to photolithography masking, the V-shaped groove is subjected to secondary etc...
Embodiment 3
[0047] The steps of the secondary corrosion mesa process for the high withstand voltage semiconductor discrete device chip are as follows:
[0048] 1. Take two pieces of 3DD155I products in the process, marked as silicon wafer I and silicon wafer II respectively, and the thickness of the oxide layer on the surface of the two silicon wafers is dsio 2 Both are 0.55 μm.
[0049] 2. The two silicon wafers are subjected to a V-groove etching after the mesa photolithography. Place the container containing the mixed solution of nitric acid, hydrofluoric acid, and glacial acetic acid with a volume ratio of 5:3:2 in the ice-water mixture, put two silicon wafers on the rack and put them into the etching solution for timing corrosion, After timing for 3 minutes and 40 seconds, the silicon wafers were taken out to measure the depth and width of the V-groove. The groove mesa depth of the two silicon wafers was 81 μm, and the groove mesa width was 192 μm.
[0050] 3. The silicon wafer I i...
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