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Method for preparing high-heat-conduction aluminum nitride ceramic substrate by adding compound sintering auxiliary

A technology of aluminum nitride ceramics and sintering aid, which is applied in the field of addition, can solve the problems of different performance, high thermal conductivity, and the ununiform force of the green body can not be guaranteed, and achieves better performance, high thermal conductivity, and beneficial to sintering. Densification effect

Inactive Publication Date: 2017-06-13
莱鼎电子材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the present invention, by adding a ternary composite sintering agent to the aluminum nitride powder, an aluminum nitride ceramic substrate with high thermal conductivity can be obtained without high-temperature sintering, which reduces energy consumption and saves production costs; but the method still exists Certain disadvantages: 1. The sintering aid used in the present invention can obtain high thermal conductivity at a lower sintering temperature and reduce energy consumption, but in the formula, Y 2 o 3 The melting point is 2415°C, and the melting point is relatively high, thereby suppressing the thermal conductivity to a certain extent; 2. In the present invention, tape casting is adopted for one-step molding, and the force on the green body cannot be guaranteed to be consistent in all directions, which makes the overall performance inconsistent

Method used

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preparation example Construction

[0025] The present invention adds a composite sintering aid to prepare a method for a high thermal conductivity aluminum nitride ceramic substrate, the preparation method comprising the following steps:

[0026] (1) Preparation of aluminum nitride ceramic powder: Add composite sintering aid to aluminum nitride powder and stir evenly to obtain aluminum nitride ceramic powder, and the mass ratio of aluminum nitride powder to composite sintering aid 10 to 12:1; wherein, the composite sintering aid is composed of alkali metal compounds, alkaline earth metal compounds and rare earth metal compounds, and the molar ratio of alkali metal compounds, alkaline earth metal compounds and rare earth metal compounds is 250:80-86 : 1000; The alkali metal compound is Li 2 O, the alkaline earth metal compound is a mixture of MgO and CaO, and the molar ratio of MgO and CaO is 1:1.06; the rare earth metal compound is YF 3 ;

[0027] (2) Ball milling: Add 35-42% of the powder weight to the alumi...

Embodiment 1

[0046] In this embodiment, a method for preparing a high thermal conductivity aluminum nitride ceramic substrate by adding a composite sintering aid, the preparation method includes the following steps:

[0047] (1) Preparation of aluminum nitride ceramic powder: adding Li to the aluminum nitride powder 2 O-MgO-CaO-YF 3 Composite sintering aid, the aluminum nitride ceramic powder can be obtained by stirring evenly, and the mass ratio of aluminum nitride powder to composite sintering aid is 10:1;

[0048] (2) Ball milling: Add 35% of the powder weight of ethanol, a mixed solvent of n-propanol and methyl ethyl ketone, a dispersant of 1.7% of the powder weight, and 0.9% of the powder weight to the aluminum nitride ceramic powder in step (1). The binder and the plasticizer of 0.4% of the powder weight are then ball milled in a ball mill to obtain a slurry for 40 hours;

[0049] (3) Vacuum defoaming: Add 0.6% powder weight defoaming agent to the ball-milled slurry, then put it in...

Embodiment 2

[0055] In this embodiment, a method for preparing a high thermal conductivity aluminum nitride ceramic substrate by adding a composite sintering aid, the preparation method includes the following steps:

[0056] (1) Preparation of aluminum nitride ceramic powder: adding Li to the aluminum nitride powder 2 O-MgO-CaO-YF 3 Composite sintering aid, the aluminum nitride ceramic powder can be obtained by stirring evenly, and the mass ratio of aluminum nitride powder to composite sintering aid is 12:1;

[0057] (2) Ball milling: Add 42% of the powder weight of ethanol, a mixed solvent of n-propanol and methyl ethyl ketone, a dispersant of 1.9% of the powder weight, and 1.1% of the powder weight to the aluminum nitride ceramic powder in step (1). The binder and the plasticizer of 0.6% of powder weight are then ball milled in a ball mill to obtain a slurry for 20 hours;

[0058] (3) Vacuum defoaming: add defoaming agent with a powder weight of 1.2% to the slurry after ball milling, a...

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Abstract

The invention relates to a method for preparing a high-heat-conduction aluminum nitride ceramic substrate by adding a compound sintering auxiliary. A preparation method comprises the following steps of (1), confecting of aluminum nitride ceramic powder, wherein a Li2O-MgO-CaO-YF3 system is adopted for the added compound sintering auxiliary; (2), ball milling; (3), vacuum bubble removal; (4), primary tape casting; (5), hydrostatic molding; (6), rubber discharge; (7), sintering. The method has the advantages that, according to the preparation method provided by the invention, through changing the formula of a sintering auxiliary, the compound sintering auxiliary can greatly improve heat conduction efficiency; moreover, the densification of aluminum nitride ceramic is further promoted; meanwhile, after the primary tape casting, the hydrostatic molding step is added; the consistency of performance is further improved.

Description

technical field [0001] The invention relates to a method for preparing an aluminum nitride ceramic substrate, in particular to an additive [0002] A method for preparing a high thermal conductivity aluminum nitride ceramic substrate with a composite sintering aid. Background technique [0003] Aluminum nitride is a new type of ceramic material with excellent comprehensive performance. It has a series of excellent properties such as excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxic and thermal expansion coefficient matching silicon. , is considered to be an ideal material for a new generation of high-density semiconductor substrates and electronic device packaging. Aluminum nitride substrates can be used in the fields of hybrid integrated circuits, semiconductor power devices, power electronic devices, optoelectronic devices, semiconductor refrigeration stacks, microwave devices, etc., as substrates and pa...

Claims

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Application Information

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IPC IPC(8): C04B35/581C04B35/64C04B35/622
CPCC04B35/581C04B35/622C04B35/64C04B2235/3203C04B2235/3206C04B2235/3208C04B2235/445
Inventor 马立斌何竟宇顔宇慧韩旭谢小荣
Owner 莱鼎电子材料科技有限公司
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