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A kind of manufacturing method of Gan-based light-emitting diode epitaxial wafer

A technology of light-emitting diodes and manufacturing methods, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of increased non-radiative recombination between electrons and holes, reduced LED luminous efficiency, LED dislocations, etc., to reduce migration Speed, improve antistatic ability, reduce the effect of leakage

Active Publication Date: 2019-05-14
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] GaN-based LEDs are usually formed on a sapphire substrate. There is a lattice mismatch between sapphire and GaN, and defects and dislocations will occur in the LED, resulting in increased non-radiative recombination between electrons and holes, greatly reducing the luminous efficiency of the LED.

Method used

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  • A kind of manufacturing method of Gan-based light-emitting diode epitaxial wafer
  • A kind of manufacturing method of Gan-based light-emitting diode epitaxial wafer
  • A kind of manufacturing method of Gan-based light-emitting diode epitaxial wafer

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Embodiment 1

[0028] An embodiment of the present invention provides a method for manufacturing a GaN-based light-emitting diode epitaxial wafer. In this embodiment, the metal organic compound chemical vapor deposition (English: Metal Organic Chemical Vapor Deposition, abbreviated: MOCVD) technology is used to manufacture the epitaxial wafer. Trimethylgallium (TMGa) or triethylgallium (TEGa) as gallium source, high-purity NH 3 As the nitrogen source, trimethylindium (TMIn) is used as the indium source, trimethylaluminum (TMAl) is used as the aluminum source, silane (SiH4) is used as the N-type dopant, and dimagnesocene (CP 2 Mg).

[0029] Specifically, see figure 1 , the manufacturing method includes:

[0030] Step 201: forming a buffer layer on a substrate.

[0031] In this embodiment, the substrate may be a sapphire substrate, and the size of the substrate may be 2 inches, 4 inches or 8 inches. The buffer layer may be a GaN layer, or may be composed of alternately stacked GaN layers a...

Embodiment 2

[0057] An embodiment of the present invention provides a method for manufacturing a GaN-based light-emitting diode epitaxial wafer, which is a specific implementation of the manufacturing method provided in Embodiment 1. In this example, see Figure 4 , the growth temperature of the N-type GaN layer is 1200°C, the growth temperature of the high-temperature AlGaN layer is 1260°C, and the growth temperature of the low-temperature GaN layer is 1150°C.

[0058] In the embodiment of the present invention, by growing a high-temperature AlGaN layer on the N-type GaN layer, the electron migration rate is slowed down, the electron migration is effectively blocked, and at the same time, some dislocations are gradually reduced or even closed at high temperature. Then grow a low-temperature GaN layer to limit the expansion of some small dislocations, interact with the high-temperature AlGaN layer, limit electron migration, increase the recombination probability of electrons and holes, red...

Embodiment 3

[0060] An embodiment of the present invention provides a method for manufacturing a GaN-based light-emitting diode epitaxial wafer, which is a specific implementation of the manufacturing method provided in Embodiment 1. In this example, see Figure 5 , the thickness of the low-temperature GaN layer may be 4 to 12 times the thickness of the high-temperature AlGaN layer, and the doping concentration of the N-type dopant in the high-temperature AlGaN layer may be higher than that of the N-type dopant in the low-temperature GaN layer, The doping concentration of the N-type dopant in the high-temperature AlGaN layer can be 10 19 ~10 20 cm -3 .

[0061] In this embodiment, the thickness of the high-temperature AlGaN layer is gradually increased, and the confinement effect of the N-type barrier layer on electrons first becomes stronger to a certain extent and then does not change significantly. When the thickness of the high-temperature AlGaN layer and the thickness of the low-t...

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Abstract

The invention discloses a manufacturing method for an epitaxial wafer of a GaN-based light emitting diode, and belongs to the technical field of a semiconductor. The manufacturing method comprises the step of sequentially forming a buffer layer, a non-doped GaN layer, an N-type GaN layer, an N-type barrier layer, a stress relief layer, a quantum well, a P-type electron baffle layer and a P-type GaN layer on a substrate, wherein the N-type barrier layer comprises a high-temperature AlGaN layer and a low-temperature GaN layer, N-type doping agents are doped in both of the high-temperature AlGaN layer and the low-temperature GaN layer, and the growth temperature of the high-temperature AlGaN layer is higher than the growth temperature of the low-temperature GaN layer. Electron migration is effectively limited by the high-temperature AlGaN layer, the electron migration rate is reduced, the carrier concentration of a light emitting well region is improved, and the luminous efficiency is finally improved; and meanwhile, a defect is blocked by the low-temperature GaN layer, the size and the opening position of a V-shaped pit are changed, the dislocation caused by lattice mismatching is reduced, electric leakage is reduced, and the anti-static capability is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing GaN-based light-emitting diode epitaxial wafers. Background technique [0002] The application of GaN materials in light emitting diode (English: Light Emitting Diode, LED for short) devices is very common and has been a hot spot that people have been paying attention to for a long time. LEDs made of GaN have pure color, high brightness, and low energy consumption, and their performance is superior to traditional AlGaInP-based LEDs or GaAlAs-based LEDs. They are widely used in many fields such as lighting, medical treatment, display, and toys. [0003] GaN-based LEDs are usually formed on a sapphire substrate. There is a lattice mismatch between sapphire and GaN, and defects and dislocations will occur in the LED, resulting in increased non-radiative recombination between electrons and holes, greatly reducing the luminous efficiency of the LED. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/32H01L33/14H01L33/00
CPCH01L33/007H01L33/145H01L33/32
Inventor 李红丽胡加辉
Owner HC SEMITEK ZHEJIANG CO LTD