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Large power thick film circuit high temperature sintering resistor paste for aluminium nitride base materials, and preparation method thereof

A thick film circuit, resistance paste technology, applied in ohmic resistance heating, heating element materials, electric heating devices, etc., can solve the loss of adhesion of electronic paste, poor wettability, affecting the stability of thick film circuit components, etc. problem, to achieve the effects of good wettability, lower sintering temperature and thermal expansion coefficient, and dense adhesion

Inactive Publication Date: 2017-06-20
DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In addition, the application of aluminum nitride materials in thick film paste technology has gradually replaced alumina ceramic substrates in some high-end fields, while traditional thick film electronic pastes are mainly developed for the development of alumina substrates. The lead borosilicate system or the lead-zinc borosilicate system is used, but these systems all use highly toxic lead oxide (PbO) as the main component. Bubbles, even oxidize the surface of the AIN ceramic substrate, the wettability of the AIN ceramic substrate becomes poor, and the electronic paste loses its adhesion
Bismuth borosilicate system is a glass with low melting point, moderate expansion and good wettability, but the main component of bismuth oxide has high activity, and it will react with aluminum nitride (AlN) to release gas during sintering, which seriously affects the thickness of the film. Stability of Circuit Components

Method used

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  • Large power thick film circuit high temperature sintering resistor paste for aluminium nitride base materials, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Example 1, a high-power thick-film circuit high-temperature sintering resistor paste for aluminum nitride substrates, in weight percent, includes the following components:

[0036] Inorganic binder phase 10%

[0037] Composite functional phase 70%

[0038] Organic vehicle 20%.

[0039] Wherein, for the inorganic bonding phase, by weight percentage, it includes the following components:

[0040] SiO 2 40%

[0041] B 2 o 3 20%

[0042] ZnO 10%

[0043] Al 2 o 3 10%

[0044] MgO 15%

[0045] TiO 2 2.5%

[0046] Y 2 o 3 2.5%.

[0047] For the composite functional phase, by weight percentage, it includes the following components:

[0048] Spherical silver powder 50%

[0049] Flake silver powder 49%

[0050] Nano palladium powder 1%.

[0051] For the organic vehicle, by weight percentage, it includes the following components:

[0052] Butyl Carbitol 35%

[0053] Butyl Carbitol Acetate 35%

[0054] Ethyl cellulose 25%

[0055] Polymethacrylate 2% ...

Embodiment 2

[0063] Example 2, a high-power thick-film circuit high-temperature sintering resistance paste for aluminum nitride substrates, in weight percent, includes the following components:

[0064] Inorganic binder phase 10%

[0065] Composite functional phase 70%

[0066] Organic vehicle 20%.

[0067] Wherein, for the inorganic bonding phase, by weight percentage, it includes the following components:

[0068] SiO 2 40%

[0069] B 2 o 3 25%

[0070] ZnO 15%

[0071] Al 2 o 3 10%

[0072] MgO 5%

[0073] CaF 2 2.5%

[0074] La 2 o 3 2.5%.

[0075] For the composite functional phase, by weight percentage, it includes the following components:

[0076] Spherical silver powder 50%

[0077] Flake silver powder 48%

[0078] Nano palladium powder 2%.

[0079] For the organic vehicle, by weight percentage, it includes the following components:

[0080] Ethylene glycol ether acetate 35%

[0081] Tributyl Citrate 35%

[0082] Acrylic resin 25%

[0083] Polymethacry...

Embodiment 3

[0091] Example 3, a high-power thick-film circuit high-temperature sintering resistance paste for aluminum nitride substrates, in weight percent, includes the following components:

[0092] Inorganic binder phase 15%

[0093] Composite functional phase 65%

[0094] Organic vehicle 20%.

[0095] Wherein, for the inorganic bonding phase, by weight percentage, it includes the following components:

[0096] SiO 2 30%

[0097] B 2 o 3 25%

[0098] ZnO 15%

[0099] Al 2 o 3 15%

[0100] MgO 10%

[0101] ZrO 2 2.5%

[0102] Eu 2 o 3 2.5%.

[0103] For the composite functional phase, by weight percentage, it includes the following components:

[0104] Spherical silver powder 50%

[0105] Flake silver powder 48%

[0106] Nano palladium powder 2%.

[0107] For the organic vehicle, by weight percentage, it includes the following components:

[0108] Butyl Carbitol 45%

[0109] Butyl Carbitol Acetate 25%

[0110] Polyurethane resin 25%

[0111] 1,4-Dihydroxysulfo...

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Abstract

The invention discloses a large power thick film circuit high temperature sintering resistor paste for aluminium nitride base materials, and a preparation method thereof. The thick film resistor paste includes an inorganic bonding phase, a composite function phase, and an organic carrier, wherein an inorganic bonding phase is formed by SiO2, B2O3, ZnO, Al2O3, MgO, nucleus agent, and rare earth oxide system microcrystalline glass powder; the composite function phase is mixed powder of spherical silver powder, sheet shape silver powder, and nanometer palladium powder; and the organic carrier is formed by organic solvent, high-molecular thickening agent, dispersant, antifoaming agent and thixotropic agent. The preparation method comprises the steps: inorganic bonding phase preparation, composite function phase preparation, organic carrier preparation and resistor paste preparation. The paste has high thixotropy and fluidity, and the microcrystalline glass powder and the conductive phase do not react with the aluminium nitride base materials, and the sintered resistance layer has the advantages of being smooth and compact in structure, being high in adhesive force, being aging resistant, being adjustable in sheet resistivity, being lower and adjustable in the resistance temperature coefficient and being high in printing sintering characteristic.

Description

technical field [0001] The invention relates to the technical field of thick-film circuits, in particular to a high-temperature sintering resistance paste for high-power thick-film circuits for aluminum nitride substrates and a preparation method thereof. Background technique [0002] With the development of microelectronic packaging technology, the power density of electronic components is increasing, resulting in an increase in heat per unit volume, so the heat dissipation capability of the new generation of circuit substrates, that is, the higher the thermal conductivity requirements. The high thermal conductivity ceramic substrates developed at this stage include AlN, SiC and BeO; among them, BeO is toxic and not conducive to environmental protection; SiC has a high dielectric constant and is not suitable for substrates. In recent years, aluminum nitride (AlN) substrates have been required for circuit boards used in high temperature environments, especially for high powe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B3/12
CPCH05B3/12H05B2203/017
Inventor 高丽萍苏冠贤
Owner DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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