Quantum dot-reinforced nanowire and ultraviolet photoelectric detector

Abstract

The present invention discloses a quantum dot-reinforced nanowire and an ultraviolet photoelectric detector. According to the quantum dot-reinforced nanowire, a nanowire with low dark current and fast response speed is adopted as a main body; high-photoconductive gain quantum dots made of a semiconductor material is grown on the surface of the nanowire; the quantum dots are uniformly dispersed on the surface of the whole nanowire, so that a quantum dot modified nanowire one-dimensional heterogeneous structure can be obtained; and the quantum dots and the nanowire need to satisfy the requirements of an II type heterogeneous structure. The ultraviolet photoelectric detector comprises a quantum dot-modified nanowire, a substrate and a source-drain electrode; two ends of the quantum dot-modified nanowire are connected with the source-drain electrode; the quantum dot-modified nanowire and the source-drain electrode are both located on the substrate; and therefore, the ultraviolet photoelectric detector can be formed. According to the ultraviolet photoelectric detector of the invention, the photoconductive gain of the ultraviolet photoelectric detector can be increased through the quantum dot-modified nanowire, and at the same time, dark current and response time increase of the device can be avoided.

Description

technical field [0001] The invention belongs to the field of functional materials, and in particular relates to a quantum dot-enhanced nanowire and an ultraviolet photodetector, which mainly increases the photoconductive gain of the photodetector by modifying the nanowire with quantum dots while avoiding device dark current and increased response time. Background technique [0002] As an important optoelectronic device, ultraviolet photodetectors have important applications in fire detection, biological analysis, environmental monitoring, space detection, optical communication and ultraviolet radiation monitoring. One-dimensional metal oxide nanostructures have been widely used in the development of ultraviolet photodetectors due to their large specific surface area, good crystallinity, and small size comparable to the Debye length. So far, most researchers' work has mainly focused on one-dimensional binary metal oxide nanostructures, and UV photodetectors based on one-dime...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the inherent shortcomings of most single-component wide-bandgap semiconductor materials as ultraviolet photodetectors, and propose a quantum dot-enhanced nanowire and its preparation method, so that it can not only have high photoconductivity gain, and can have fast response speed and low dark current at the same time; the present invention also provides a nanowire-type high-performance ultraviolet photodetector enhanced by quantum dots and its preparation method, which is prepared by nanowires enhanced by quantum dots. to make

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