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A zinc oxide/bismuth vanadate heterojunction thin film with visible light response characteristics and its preparation method and application

A technology with response characteristics and visible light, applied in chemical instruments and methods, metal/metal oxide/metal hydroxide catalysts, separation methods, etc. Not firm, unfavorable photocatalytic degradation and other problems, to achieve the effect of less defects, highly ordered bond formation, and good film formation effect

Active Publication Date: 2019-10-29
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the compact structure of the film is not conducive to photocatalytic degradation, the repeatability is not high, the environmental pollution is large, and the degree of bonding with the substrate is not strong. idea

Method used

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  • A zinc oxide/bismuth vanadate heterojunction thin film with visible light response characteristics and its preparation method and application
  • A zinc oxide/bismuth vanadate heterojunction thin film with visible light response characteristics and its preparation method and application
  • A zinc oxide/bismuth vanadate heterojunction thin film with visible light response characteristics and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] 1) BiVO 4 Precursor configuration:

[0047] Add NH to deionized water 4 VO 3 , stirred for 20 minutes until clear, then added dilute nitric acid, stirred for 10 minutes until the solution was uniform, then added Bi(NO 3 ) 3 ·5H 2 O, stirred at room temperature for 60min until clear, finally added boric acid, stirred for 10min until clear, and obtained BiVO 4 Precursor; NH added to it 4 VO 3 , dilute nitric acid, Bi(NO 3 ) 3 ·5H 2 The molar ratio of O and boric acid is 1:41.7:1:1; BiVO 4 The concentration of Bi element in the precursor solution is 0.010mol / L;

[0048] 2) Functionalization of the substrate:

[0049] Place the FTO conductive glass substrate in water, acetone, and absolute ethanol in sequence for ultrasonic cleaning for 10 min. After washing, irradiate with 184.9nm ultraviolet light for 30 minutes to form a hydroxyl monomolecular layer on the surface of the substrate, and obtain a substrate with an adsorbed hydroxyl layer;

[0050] 3) BiVO 4 ...

Embodiment 2

[0065] 1) BiVO 4 Precursor configuration:

[0066] Add NH to deionized water 4 VO 3 , stirred for 15 minutes until clear, then added dilute nitric acid, stirred for 15 minutes until the solution was uniform, then added Bi(NO 3 ) 3 ·5H 2 O, stirred at room temperature for 50min until clarified, finally added boric acid, stirred for 15min until clarified, and obtained BiVO 4 Precursor; NH added to it 4 VO 3 , dilute nitric acid, Bi(NO 3 ) 3 ·5H 2 The molar ratio of O and boric acid is 1:42:1:1; BiVO 4 The concentration of Bi element in the precursor solution is 0.020mol / L;

[0067] 2) Functionalization of the substrate:

[0068] Place the FTO conductive glass substrate in water, acetone, and absolute ethanol in sequence for ultrasonic cleaning for 10 min. After washing, irradiate with 184.9nm ultraviolet light for 20 minutes to form a hydroxyl monomolecular layer on the surface of the substrate, and obtain a substrate with an adsorbed hydroxyl layer;

[0069] 3) Bi...

Embodiment 3

[0084] 1) BiVO 4 Precursor configuration:

[0085] Add NH to deionized water 4 VO 3 , stirred for 10 minutes until clear, then added dilute nitric acid, stirred for 20 minutes until the solution was uniform, then added Bi(NO 3 ) 3 ·5H 2 O, stirred at room temperature for 80min until clarified, finally added boric acid, stirred for 20min until clarified, and obtained BiVO 4 Precursor; NH added to it 4 VO 3 , dilute nitric acid, Bi(NO 3 ) 3 ·5H 2 The molar ratio of O and boric acid is 1:55:1:1; BiVO 4 The concentration of Bi element in the precursor solution is 0.030mol / L;

[0086] 2) Functionalization of the substrate:

[0087] Place the ITO conductive glass substrate in water, acetone, and absolute ethanol in sequence for ultrasonic cleaning for 10 min. After washing, irradiate with 184.9nm ultraviolet light for 40 minutes to form a hydroxyl monomolecular layer on the surface of the substrate, and obtain a substrate with an adsorbed hydroxyl layer;

[0088] 3) Bi...

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Abstract

The invention provides a zinc oxide / bismuth vanadate heterojunction film with visible light response characteristics and its preparation method and application. BiVO is first configured 4 Precursor liquid and ZnO precursor liquid, and then use reverse layer-by-layer self-assembly technology of electrostatic adsorption of hydroxyl layer to put the substrate into BiVO 4 A certain thickness of amorphous BiVO was prepared from the precursor liquid. 4 thin film, amorphous BiVO 4 The film is irradiated under ultraviolet light to form a hydroxyl layer, which is then put into the ZnO precursor solution for a second time to perform reverse layer-by-layer self-assembly to form BiVO. 4 ‑ZnO amorphous film is finally crystallized at 500°C to obtain a zinc oxide / bismuth vanadate heterojunction film with visible light response characteristics. The technological process of the present invention is simple and easy to control, and the experimental condition requirements are relatively low. The prepared ZnO / BiVO 4 Heterojunction films have broad application prospects in the field of photocatalysis.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a layer-by-layer self-assembly technology of molecular recognition and adsorption to prepare ZnO / BiVO with sensitive visible light response characteristics 4 Thin films and their methods of preparation and applications. Background technique [0002] With the development of society, the treatment of organic pollutants that endanger biological health is a major problem of concern to the world. Among them, the heterogeneous catalytic advanced oxidation technology developed according to the photocatalytic mechanism is a promising pollution control technology. Photocatalytic oxidation technology can effectively destroy many structurally stable refractory pollutants, and has the advantages of high degradation efficiency and complete pollutant degradation, which has attracted widespread attention. Photocatalytic oxidation technology has achieved good results in the degradation of o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/22C02F1/30B01D53/00C02F101/30
CPCB01D53/007C02F1/30B01J23/002B01J23/22C02F2101/30B01D2257/70B01J2523/00B01J35/39B01J35/59B01J2523/27B01J2523/54B01J2523/55
Inventor 谈国强张昕蕾许驰任慧君夏傲邵丹
Owner SHAANXI UNIV OF SCI & TECH