A zinc oxide/bismuth vanadate heterojunction thin film with visible light response characteristics and its preparation method and application
A technology with response characteristics and visible light, applied in chemical instruments and methods, metal/metal oxide/metal hydroxide catalysts, separation methods, etc. Not firm, unfavorable photocatalytic degradation and other problems, to achieve the effect of less defects, highly ordered bond formation, and good film formation effect
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Embodiment 1
[0046] 1) BiVO 4 Precursor configuration:
[0047] Add NH to deionized water 4 VO 3 , stirred for 20 minutes until clear, then added dilute nitric acid, stirred for 10 minutes until the solution was uniform, then added Bi(NO 3 ) 3 ·5H 2 O, stirred at room temperature for 60min until clear, finally added boric acid, stirred for 10min until clear, and obtained BiVO 4 Precursor; NH added to it 4 VO 3 , dilute nitric acid, Bi(NO 3 ) 3 ·5H 2 The molar ratio of O and boric acid is 1:41.7:1:1; BiVO 4 The concentration of Bi element in the precursor solution is 0.010mol / L;
[0048] 2) Functionalization of the substrate:
[0049] Place the FTO conductive glass substrate in water, acetone, and absolute ethanol in sequence for ultrasonic cleaning for 10 min. After washing, irradiate with 184.9nm ultraviolet light for 30 minutes to form a hydroxyl monomolecular layer on the surface of the substrate, and obtain a substrate with an adsorbed hydroxyl layer;
[0050] 3) BiVO 4 ...
Embodiment 2
[0065] 1) BiVO 4 Precursor configuration:
[0066] Add NH to deionized water 4 VO 3 , stirred for 15 minutes until clear, then added dilute nitric acid, stirred for 15 minutes until the solution was uniform, then added Bi(NO 3 ) 3 ·5H 2 O, stirred at room temperature for 50min until clarified, finally added boric acid, stirred for 15min until clarified, and obtained BiVO 4 Precursor; NH added to it 4 VO 3 , dilute nitric acid, Bi(NO 3 ) 3 ·5H 2 The molar ratio of O and boric acid is 1:42:1:1; BiVO 4 The concentration of Bi element in the precursor solution is 0.020mol / L;
[0067] 2) Functionalization of the substrate:
[0068] Place the FTO conductive glass substrate in water, acetone, and absolute ethanol in sequence for ultrasonic cleaning for 10 min. After washing, irradiate with 184.9nm ultraviolet light for 20 minutes to form a hydroxyl monomolecular layer on the surface of the substrate, and obtain a substrate with an adsorbed hydroxyl layer;
[0069] 3) Bi...
Embodiment 3
[0084] 1) BiVO 4 Precursor configuration:
[0085] Add NH to deionized water 4 VO 3 , stirred for 10 minutes until clear, then added dilute nitric acid, stirred for 20 minutes until the solution was uniform, then added Bi(NO 3 ) 3 ·5H 2 O, stirred at room temperature for 80min until clarified, finally added boric acid, stirred for 20min until clarified, and obtained BiVO 4 Precursor; NH added to it 4 VO 3 , dilute nitric acid, Bi(NO 3 ) 3 ·5H 2 The molar ratio of O and boric acid is 1:55:1:1; BiVO 4 The concentration of Bi element in the precursor solution is 0.030mol / L;
[0086] 2) Functionalization of the substrate:
[0087] Place the ITO conductive glass substrate in water, acetone, and absolute ethanol in sequence for ultrasonic cleaning for 10 min. After washing, irradiate with 184.9nm ultraviolet light for 40 minutes to form a hydroxyl monomolecular layer on the surface of the substrate, and obtain a substrate with an adsorbed hydroxyl layer;
[0088] 3) Bi...
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