Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Horizontal array of ultra-long single-walled carbon nanotubes, preparation method and reaction device

A single-walled carbon nanotube, horizontal technology, applied in the field of nanomaterials research, can solve the problems of slow growth and instability of carbon nanotubes, and achieve a stable and consistent, high-collimation, high-collimation horizontal array. Effect

Active Publication Date: 2019-04-09
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] An object of the present invention is to provide a method for preparing a horizontal array of ultra-long single-walled carbon nanotubes, to solve the problem of slow or unstable growth of carbon nanotubes in the prior art due to unstable carbon source atmosphere

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Horizontal array of ultra-long single-walled carbon nanotubes, preparation method and reaction device
  • Horizontal array of ultra-long single-walled carbon nanotubes, preparation method and reaction device
  • Horizontal array of ultra-long single-walled carbon nanotubes, preparation method and reaction device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0101] figure 1 A schematic flowchart showing a method for preparing a horizontal array of ultra-long single-walled carbon nanotubes according to an embodiment of the present invention. Generally, the method for preparing a horizontal array of ultra-long single-walled carbon nanotubes includes the following steps,

[0102] S10 provides a first substrate 25 carrying a catalyst precursor 41 , and heats it to a temperature T1 in an atmosphere with a reducing gas to reduce the catalyst precursor 41 to an active catalyst 411 .

[0103] S20 quickly reduce the temperature of the first substrate 25 and the catalyst 411 to the non-reaction temperature, provide the second substrate 26, and place the second substrate 26 and the first substrate 25 carrying the active catalyst 411 together In the atmosphere with a carbon source, after the atmosphere is a stable laminar flow, the temperature is rapidly raised to the growth temperature T2, and grown at the temperature T2 to obtain a horizon...

Embodiment 1

[0160] Step 1: Spray ferric chloride anhydrous ethanol dispersion on the polished surface of the N-type single crystal silicon wafer containing a 500nm thermal oxide layer after polishing, and dry it at room temperature to form a catalyst precursor 41 film 411. This implementation In the example, the size of the first substrate 25 is 1cm×1cm, and the preferred concentration of the dispersion is 0.1mM (10 -4 mol / L), the spray volume is 10μL / cm 2 .

[0161] Step 2: The first substrate 25 carrying the directly deposited catalyst precursor 41 is oxidized at a high temperature in a muffle furnace to form a processed catalyst precursor 41, such as figure 2 As shown, in this embodiment, the treatment temperature is preferably 800° C., and the treatment time is preferably 5 minutes.

[0162] Step 3: Place the cleaned second substrate 26 and the first substrate 25 carrying the treated catalyst precursor 41 on the base 27 at the same time, as image 3 (A) and 3(B).

[0163] In the ...

specific Embodiment 1

[0194] In the specific embodiment 1, the positions of the heating device 22 and the cooling device 23 are kept fixed, and the reaction chamber 21 is moved to quickly switch the first substrate 25 and the three second substrates 26 between the reaction zone 221 and the non-reaction zone 231 . In this embodiment, the position of the reaction chamber 21 is kept fixed, and the heating device 22 is moved, so that the first substrate 25 and the three second substrates 26 can be quickly switched between the reaction zone 221 and the non-reaction zone 231, achieving the same Specific Example 1 has the same preparation effect.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
diameteraaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method for preparing a uniform-nature horizontal array for an overlong single-wall carbon nano-tube by utilizing a stable airflow and a reaction device and relates to the field of nano-material research. The preparation method comprises the following steps: reducing a catalyst precursor in a reducing atmosphere into a catalyst with an activity and then quickly reducing the temperature to non-reaction temperature; placing both a second substrate and a first substrate loaded with the catalyst with the activity into a stable laminar flow atmosphere with a carbon source; quickly increasing the temperature to the growth temperature and reacting, thus obtaining the horizontal array for the overlong single-wall carbon nano-tube. The reaction device at least comprises a reaction chamber and a heating device. The reaction chamber can quickly increase temperature and reduce temperature so as to meet the temperature requirement required by the reaction. The method and the device provided by the invention can guarantee the aligned parallel array of the acquired overlong single-wall carbon nano-tube in stable laminar flow and can effectively controllable prepare the horizontal array for the overlong single-wall carbon nano-tube with flawless surface, uniform nature, high collimation, high parallel property and high density.

Description

technical field [0001] The invention relates to the field of nanomaterial research, in particular to a horizontal array of ultra-long single-walled carbon nanotubes, a preparation method and a reaction device. Background technique [0002] Carbon nanotubes have excellent mechanical, thermal, electrical and chemical properties, such as extremely high Young's modulus, thermal conductivity, carrier mobility and chemical stability. These advantages make carbon nanotubes have broad application prospects in the fields of electronic devices, optoelectronic devices, sensor devices, and composite materials. [0003] Carbon nanotubes can be divided into single-wall carbon nanotubes and multi-wall carbon nanotubes. Among them, single-wall carbon nanotubes are an ideal one-dimensional quantum wire, which has a wider application space in the fields of electronics and optoelectronics. Especially in the field of micro-nano electronic devices, carbon nanotubes are regarded as the core mate...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/162C01B32/164C01B32/159
CPCC01B2202/02C01B2202/08C01B2202/34C01P2002/82C01P2004/03
Inventor 杨丰周维亚王艳春解思深
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com