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Short-process preparation method of indium tin oxide sintered body

A preparation technology of indium tin oxide, which is applied in the field of short-process preparation process of indium tin oxide sintered bodies, can solve the problems of poor sintering and densification performance of ITO, high sintering and product costs, and complicated design of sintering devices, etc., to achieve sintering Effect of shortening time, inhibiting grain growth, and fine grain

Pending Publication Date: 2017-07-21
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because after the degreasing process of the cold-pressed green body of the ITO target material, the strength of the green body is very low, and a slight vibration will cause breakage or cracks. Once this defect occurs, due to the poor densification performance of ITO sintering, it will remain until the final sintering in the body
At the same time, the sintering process developed by Japan is actually normal pressure (can withstand 1kg / cm 2 ) High-concentration and high-flux oxygen atmosphere sintering process, not a real pressureless sintering process, so the design of the sintering device is too complicated, and the cost of sintering and products is high, such as Chinese patents: CN201410068331.9, CN201210424320.0, etc.

Method used

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  • Short-process preparation method of indium tin oxide sintered body
  • Short-process preparation method of indium tin oxide sintered body
  • Short-process preparation method of indium tin oxide sintered body

Examples

Experimental program
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Effect test

Embodiment 1

[0029] A short process preparation process for an indium tin oxide sintered body, comprising the following steps:

[0030] (1) Mix 9 kg of indium oxide powder and 1 kg of tin oxide powder by ball milling to obtain 10 kg of mixed powder; among them, when ball milling, the ratio of ball to material is 3:1, the ratio of large and small balls is 2:1, and the ratio of large and small balls is 2:1. , The diameter of the ball is respectively selected as 3 mm and 0.5 mm;

[0031] (2) Add water, polyvinyl alcohol, ammonium polyacrylate and polyether defoamer to the mixed powder obtained in step (1), and mix for 4 hours to obtain a slurry; the mass percentage of the mixed powder in the slurry It is 42%, the mass percentage that polyvinyl alcohol accounts for is 1%, the mass percentage that polyacrylic acid ammonium accounts for is 0.1%, the mass percentage that polyether type defoamer accounts for is 0.1%;

[0032] (3) Spray the slurry obtained in step (2) into the high-speed rotating ...

Embodiment 2

[0038] A short process preparation process for an indium tin oxide sintered body, comprising the following steps:

[0039] (1) Mix 9 kg of indium oxide powder and 1 kg of tin oxide powder by ball milling to obtain 10 kg of mixed powder; among them, when ball milling, the ratio of ball to material is 3:1, the ratio of large and small balls is 2:1, and the ratio of large and small balls is 2:1. , The diameter of the ball is respectively selected as 3 mm and 0.5 mm;

[0040] (2) Add water, polyvinyl alcohol, ammonium polyacrylate and polyether defoamer to the mixed powder obtained in step (1), and mix for 2 hours to obtain a slurry; the mass percentage of the mixed powder in the slurry It is 30%, the mass percentage that polyvinyl alcohol accounts for is 1.5%, the mass percentage that polyacrylic acid ammonium accounts for is 0.15%, the mass percentage that polyether type defoamer accounts for is 0.15%;

[0041] (3) Spray the slurry obtained in step (2) into the high-speed rotat...

Embodiment 3

[0047] A short process preparation process for an indium tin oxide sintered body, comprising the following steps:

[0048] (1) Mix 9 kg of indium oxide powder and 1 kg of tin oxide powder by ball milling to obtain 10 kg of mixed powder; among them, when ball milling, the ratio of ball to material is 3:1, the ratio of large and small balls is 2:1, and the ratio of large and small balls is 2:1. , The diameter of the ball is respectively selected as 3 mm and 0.5 mm;

[0049] (2) Add water, polyvinyl alcohol, ammonium polyacrylate and polyether defoamer to the mixed powder obtained in step (1), and mix for 6 hours to obtain a slurry; the mass percentage of the mixed powder in the slurry 50%, the mass percentage that polyvinyl alcohol accounts for is 2%, the mass percentage that polyacrylic acid ammonium accounts for is 0.2%, the mass percentage that polyether type defoamer accounts for is 0.2%;

[0050] (3) Spray the slurry obtained in step (2) into the high-speed rotating disk i...

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Abstract

The invention discloses a short-process preparation method of indium tin oxide sintered body. According to the short-process preparation method of indium tin oxide sintered body, indium oxide powder and tin oxide powder are taken as raw materials, are subjected to ball milling, are mixed to be uniform, are subjected to pulping and spray granulation, and then are subjected to compression molding so as to obtain a biscuit; the biscuit is delivered into a furnace for continuous degreasing and sintering so as to obtain indium tin oxide sintered body high in density. The short-process preparation method is capable of reducing sintering temperature, shortening sintering time, realizing rapid activation sintering, inhibiting crystal grain growth, and producing the indium tin oxide (ITO) sintered body small and uniform in crystal grain size, and high in density (relative density is 99.7%) and strength (bending strength>=200MPa).

Description

technical field [0001] The invention belongs to the technical field of metal oxide materials, and in particular relates to a short-flow preparation process of an indium tin oxide sintered body. Background technique [0002] Indium tin oxide, that is, tin-doped indium oxide (Indium Tin Oxide, ITO for short) material is an n-type semiconductor material, and the ITO target is the raw material for preparing ITO transparent conductive film by magnetron sputtering. This transparent conductive film has a transmittance of >85% for visible light, and a reflectivity of infrared light >90%. It has good electrical conductivity, excellent chemical stability, thermal stability and etchability. It is a very unique film. Materials are widely used in flat panel displays, radiation-proof glass, thin-film solar cells and other fields. [0003] The preparation methods of ITO targets include hot pressing, hot isostatic pressing and sintering. Hot pressing and hot isostatic pressing are g...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/01C04B35/622C04B35/64C04B35/638
Inventor 孙本双何季麟舒永春李庆奎曾学云刘洋杨淑敏张晓娜王武罗宁王净丰
Owner ZHENGZHOU UNIV