Grooved gate enhanced GaN transistor device based on nano channel

Abstract

The invention discloses a grooved gate enhanced GaN transistor device based on a nano channel and relates to the technical field of microelectronic devices. The grooved gate enhanced GaN transistor device comprises, from bottom to top, a substrate layer, a GaN buffer layer, an AlGaN barrier layer, a gate dielectric layer, a passivation layer, a source, a drain and a gate. The heterojunction under the gate of an AlGaN/GaN high-electron-mobility transistor device is etched to form the nano channel such that no two-dimensional electron gas exists in the regions on both sides of the nano channel. The gate wraps the top and two sidewalls of the nano channel. The gate modulates the electrons in the nano channel from three directions so as to have good control ability and well suppress a short channel effect. When the nano channel has a small width, the two-dimensional electron gas in the channel is exhausted and the device is enhanced. The combined effect of the nano channel and grooved gate can ensure that the device has a large nano-channel width while enhanced, and reduces the on-resistance.

Description

technical field [0001] The invention relates to the technical field of microelectronic devices, in particular to a groove gate enhanced GaN transistor device based on nano-channels. Background technique [0002] The wide bandgap semiconductor material GaN has the advantages of high critical breakdown electric field, high electron saturation velocity, good thermal stability and strong radiation resistance, especially AlGaN / GaN heterostructure materials due to spontaneous polarization and piezoelectric Due to its extremely high two-dimensional electron gas concentration and electron mobility, it is considered to be an excellent material for the preparation of high-temperature, radiation-resistant, high-frequency, high-power microwave power devices, high-speed, high-voltage power switching devices, and radiation-resistant high-speed digital circuits. [0003] Due to the existence of polarization effects, AlGaN / GaN high electron mobility transistors are usually depletion-mode de...

AI Technical Summary

Problems solved by technology

However, with the continuous shrinking of the device size and the shorter gate length, the short channel effect of the traditional planar high electron mobility transistor becomes more and more obvious.

In 2013, Ki-Sik Im and others prepared an enhanced AlGaN / GaN MISFET with a single nanochannel, with a threshold voltage of 2.1V. The device structure uses a common gate structure. In order to realize an enhanced device, the nanochannel width is only 50nm , and both ends of the nanochannel extend to the source and drain electrode regions, so the device has a large on-resistance

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