Ultrathin silicon chemical cutting method
A chemical cutting and ultra-thin technology, applied in the field of material processing, can solve the problems of silicon material loss, difficult ultra-thin silicon wafer cutting, silicon wafer damage layer, etc.
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Embodiment 1
[0022] The monocrystalline silicon ingot was ultrasonically cleaned with ethanol and deionized water for 10 minutes in sequence; the Au wire was soaked in a nitric acid solution with a mass percentage concentration of 0.01% for 30 minutes; HF / H 2 o 2 The mixed solution is used as the etching solution, the mass percent concentration of hydrofluoric acid in the etching solution is 20%, and the mass percent concentration of the oxidant is 30%; the Au wire after soaking is suspended and fixed in the etching tank, and the cleaned The silicon ingot is placed above the Au wire, the prepared etching solution is poured into the etching tank, and the silicon ingot and the metal wire are completely submerged. After the cutting is completed, the silicon sheet is placed in a KOH solution with a mass percentage concentration of 1%. Soak it in water for 20 minutes, and finally rinse with a large amount of deionized water and dry it.
Embodiment 2
[0024] The monocrystalline silicon ingot was ultrasonically cleaned with ethanol and deionized water for 10 minutes in sequence; the Ag silk thread was soaked in a 2% nitric acid solution by mass percentage for 30 seconds; HF / Na 2 S 2 o 8 The mixed solution is used as etching solution, and the mass percent concentration of hydrofluoric acid in the etching solution is 10%, and the mass percent concentration of oxidizing agent is 80%; After soaking, the Ag silk thread is suspended and fixed in the etching tank, and the cleaned The silicon ingot is placed above the Ag wire, the prepared etching solution is poured into the etching tank, and the silicon ingot and the metal wire are completely submerged. After the cutting is completed, the silicon sheet is placed in a KOH solution with a mass percentage concentration of 30%. Soak for 5 minutes; finally rinse with plenty of deionized water and blow dry.
Embodiment 3
[0026] The polysilicon ingot was ultrasonically cleaned with ethanol and deionized water for 10 minutes in sequence; the Pt wire was soaked in 5% nitric acid solution for 10 seconds; HF / K 2 Cr 2 o 7 The mixed solution of mixed solution is used as etching liquid, and the mass percentage concentration of hydrofluoric acid is 50% in etching liquid, and the mass percentage concentration of oxidant is 50%; After soaking, the Pt wire is suspended and fixed in the etching tank, and the cleaned The silicon ingot is placed above the Pt wire, the prepared etching solution is poured into the etching tank, and the silicon ingot and the metal wire are completely submerged. After the cutting is completed, the silicon sheet is placed in a KOH solution with a mass percentage concentration of 30%. Soak for 5 minutes; finally rinse with plenty of deionized water and blow dry.
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