Encapsulation structure and method of micro electro mechanical system device

Abstract

The invention discloses an encapsulation structure and method of a micro electro mechanical system device. The encapsulation structure of the micro electro mechanical system device comprises a first wafer and a second wafer; the first wafer is provided with a first central region and a first marginal region surrounding the first central region; the second wafer is provided with a second central region and a second marginal region surrounding the second central region; a first closed space is formed between the first central region and the second central region by correspondingly binding the first binding structure of the first marginal region and the second binding structure of the second marginal region together, namely, the micro electro mechanical system device in the first wafer is located in the closed space; the encapsulation structure of the formed micro electro mechanical system device is excellent in sealing; and the manufacturing procedure of the second wafer is simple and easy and free from additional processing. Therefore, the encapsulation structure of the micro electro mechanical system device disclosed by the invention is good in air tightness, simple and easy in encapsulation method, and low in production cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging, in particular to a packaging structure and method for micro-electromechanical system devices. Background technique [0002] Micro-Electro-Mechanical System (MEMS) sensor is a new type of sensor manufactured by microelectronics and micromachining technology. Compared with traditional sensors, it has the characteristics of small size, light weight, low cost, low power consumption, high reliability, suitable for mass production, easy integration and intelligentization. [0003] Since most MEMS devices have airtightness requirements, such as a microbolometer (Micro-bolometer) in the infrared sensor, in the prior art, the packaging method of the MEMS sensor usually adopts a cap that forms a closed space, Through-silicon vias are formed on the cap to realize the electrical connection of MEMS and meet airtightness requirements, but the traditional packaging method requires additional pr...

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Problems solved by technology

[0003] Since most MEMS devices have airtightness requirements, such as a microbolometer (Micro-bolometer) in the infrared sensor, in the prior art, the packaging method of the MEMS sensor usually adopts a cap that forms a closed space, Through-silicon vias are formed on the cap to realize the electrical connection of MEMS and meet airtightness requirements, but the traditional packaging method requires additional processing of the cap, which has problems such as high process difficulty, low airtightness and high cost

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