A kind of method that prepares polycrystalline SiC film by sapphire substrate

Abstract

The embodiment of the invention discloses a method for preparing a polycrystalline SiC film through a sapphire substrate and relates to the technical field of semiconductor film materials. The method comprises the steps of putting the cleaned sapphire substrate (1) and an SiC target material into a vacuum reaction cavity, pumping the vacuum reaction cavity into a high vacuum state, and heating the sapphire substrate (1); introducing argon and oxygen into the vacuum reaction cavity and maintaining air pressure; executing a magnetron sputtering process to obtain a transition layer (1) and a transition layer (3), wherein the sputtering process comprises pre-sputtering and formal sputtering; closing an oxygen channel, only introducing argon and maintaining the air pressure; executing the magnetron sputtering process again to obtain an SiC film (4); cooling the vacuum reaction cavity to a room temperature and then taking out a sample; and putting the taken sample into a quick annealing oven for thermal annealing. The method is suitable for preparation of the polycrystalline SiC film on the sapphire substrate.

Description

technical field [0001] The invention relates to the technical field of semiconductor thin film materials, in particular to a method for preparing a polycrystalline SiC thin film through a sapphire substrate. Background technique [0002] Si is the representative of the first generation of narrow-bandgap semiconductor materials, and its usage occupies an absolute advantage in all semiconductor materials. Almost all power and power electronic devices are manufactured using Si materials, but Si materials are not completely ideal. For example, the temperature sensor made of Si material has an effective temperature measurement range of only 0-150°C, which cannot be adapted to the measurement in some high-temperature environments. Therefore, in recent years, the research on the third-generation wide bandgap semiconductor material, that is, SiC material, has gradually begun. SiC materials have superior electrical properties, and are especially suitable for making high-voltage, hig...

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Problems solved by technology

[0004] But from the perspective of basic parameters, the lattice mismatch between the sapphire substrate (1) and the SiC thin film is very large, as high as 9%-15%, and the adhesion of SiC on the sapphire substrate (1) is very poor, making it difficult to nucleate to grow

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