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A hollow spherical β-bi 2 o 3 /bi 2 the s 3 Heterojunction photocatalyst and its preparation method and application

A photocatalyst and heterojunction technology, which is applied in the synthesis of visible light catalytic materials, can solve the problems of low cost and narrow band gap, and achieve the effects of good light absorption performance, large specific surface area and pore volume

Active Publication Date: 2019-08-30
HENAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, bismuth(III)-based oxide photocatalysts have become a kind of photocatalytic materials that have attracted much attention, especially bismuth oxide, because of its non-toxicity, low cost, relatively narrow band gap and diversity of morphology, it has been Considered as a potentially promising photocatalyst material, it is limited by the rapid recombination of photogenerated electron-hole pairs

Method used

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  • A hollow spherical β-bi <sub>2</sub> o <sub>3</sub> /bi <sub>2</sub> the s <sub>3</sub> Heterojunction photocatalyst and its preparation method and application
  • A hollow spherical β-bi <sub>2</sub> o <sub>3</sub> /bi <sub>2</sub> the s <sub>3</sub> Heterojunction photocatalyst and its preparation method and application
  • A hollow spherical β-bi <sub>2</sub> o <sub>3</sub> /bi <sub>2</sub> the s <sub>3</sub> Heterojunction photocatalyst and its preparation method and application

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Experimental program
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Effect test

Embodiment 1

[0016] 1mM Bi(NO 3 ) 3 ·5H 2 O was dissolved in a mixed solution of ethanol and glycerol to obtain solution A; solution A was transferred to a 100mL polytetrafluoroethylene reactor and reacted at 180°C for 18 hours. Wash three times, then dry in a constant temperature drying oven at 60°C, and finally transfer to a muffle furnace for calcination at 280°C to obtain β-Bi 2 o 3 Photocatalyst (abbreviated as BiO). Under 350W Xe light for 90 minutes, the photocatalytic oxidation rate of 10mg / L RhB was 70%, and the photocatalytic reduction rate of 10mg / L Cr(VI) wastewater was 65%.

Embodiment 2

[0018] 1mM Bi(NO 3 ) 3 ·5H 2 O was dissolved in a mixed solution of ethanol and glycerol to obtain solution A; 3mM thiourea was added to solution A and stirred evenly to obtain solution B; solution B was transferred to a 100mL polytetrafluoroethylene reactor and reacted at 180°C for 18h After the reaction is completed, it is naturally cooled to room temperature, separated by filtration, washed with water and ethanol three times, then dried in a constant temperature drying oven at 60°C, and finally transferred to a muffle furnace for calcination at 280°C to obtain Bi 2 S 3 Photocatalyst (abbreviated as BiS). Under 350WXe light for 90min, the photocatalytic oxidation rate of 10mg / L RhB was 43%, and the photocatalytic reduction rate of 10mg / L Cr(VI) wastewater was 27%.

Embodiment 3

[0020] 9mM Bi(NO 3 ) 3 ·5H 2 O was dissolved in a mixed solution of ethanol and glycerol to obtain solution A; 3mM thiourea was added to solution A and stirred evenly to obtain solution B; solution B was transferred to a 100mL polytetrafluoroethylene reactor and reacted at 180°C After 18 hours, after the reaction was completed, it was naturally cooled to room temperature, separated by filtration, washed three times with water and ethanol, then dried in a constant temperature drying oven at 60°C, and finally transferred to a muffle furnace for calcination at 280°C to obtain hollow spherical β-Bi 2 o 3 / Bi 2 S 3 Heterojunction photocatalysts (abbreviated as BiOS). React under 350W Xe light for 90 minutes, the photocatalytic oxidation rate of 10mg / L RhB can reach 99.7%, and the photocatalytic reduction rate of 10mg / L Cr(VI) wastewater can reach 96.1%.

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Abstract

The invention discloses a hollow spherical β‑Bi 2 o 3 / Bi 2 S 3 The invention discloses a method for preparing a heterojunction photocatalyst, which belongs to the technical field of synthesis of visible light catalytic materials. The main points of the technical scheme of the present invention are: Bi(NO 3 ) 3 ·5H 2 O was dissolved in a mixed solution of ethanol and glycerol to obtain solution A; thiourea was added to solution A and stirred evenly to obtain solution B; solution B was transferred to a polytetrafluoroethylene reactor and reacted at 180°C for 18 hours, and the reaction was completed After naturally cooling to room temperature, it was separated by filtration, washed three times with water and ethanol, then dried in a constant temperature drying oven at 60°C, and finally transferred to a muffle furnace for calcination at 280°C to obtain hollow spherical β-Bi 2 o 3 / Bi 2 S 3 heterojunction photocatalysts. The hollow spherical β Bi that the present invention makes 2 o 3 / Bi 2 S 3 The heterojunction photocatalyst has good light absorption performance, large specific surface area and pore volume, and has high-efficiency photocatalytic oxidation of RhB wastewater and photocatalytic reduction of Cr(VI) wastewater under simulated sunlight irradiation.

Description

technical field [0001] The invention belongs to the technical field of synthesis of visible light catalytic materials, in particular to a hollow spherical β-Bi 2 o 3 / Bi 2 S 3 Heterojunction photocatalyst and its preparation method and application. Background technique [0002] Some dye wastewater discharged into natural water bodies has toxic, carcinogenic, and mutagenic effects, and poses a serious threat to human health and ecosystems. In addition, for pollutants in wastewater, Cr(VI) has attracted much attention. Chromium has a wide range of uses in different industrial activities, such as electroplating, textile dyeing, leather tanning and metallurgy, etc., resulting in the toxicity of chromium-containing wastewater, Cr(VI) is potentially carcinogenic and mutagenic, and has been listed as one of the 20 most serious threats to human health. Therefore, their efficient removal from wastewater is crucial. Among various wastewater treatment technologies, semiconductor ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/02B01J35/08C02F1/30C02F1/70C02F1/72
CPCC02F1/30C02F1/70C02F1/725B01J27/02C02F2305/10C02F2101/22B01J35/51B01J35/39Y02W10/37
Inventor 孙剑辉禹崇菲董淑英夏隆基铁璐娜杨鹏艳王珂赵瑾
Owner HENAN NORMAL UNIV