Self-driven near infrared photodetector based on potassium sulfate quasi-one-dimensional nanostructure and preparation method thereof

Abstract

The invention discloses a self-driven near infrared photodetector based on a potassium sulfate quasi-one-dimensional nanostructure and a preparation method thereof. The method comprises the steps that a KCu7S4 monolayer film assembled by a KCu7S4 quasi-one-dimensional nanostructure through an LB technology is transferred to an n-type silicon substrate on which an insulating region is constructed; the KCu7S4 monolayer film contacts the silicon substrate to form a Si/KCu7S4 heterojunction; a first metal thin film electrode in ohmic contact with the KCu7S4 monolayer film is deposited on the insulating region; and a second metal thin film electrode in ohmic contact with silicon is prepared on the back of the silicon substrate, and the self-driven near infrared photodetector is acquired. The self-driven near infrared photodetector provided by the invention has the advantages of simple preparation process, superior device performance and good compatibility with the existing semiconductor technology.

Description

technical field [0001] The invention relates to a self-driven near-infrared photoelectric detector and a preparation method thereof, in particular to a self-driven near-infrared photoelectric detector based on a copper potassium sulfate quasi-one-dimensional nanostructure and a preparation method thereof. Background technique [0002] Photodetectors are semiconductor devices that convert optical signals into electrical signals. The wavelength range that the human eye can perceive is 380-780nm, and there is a large amount of infrared light in daily life, so the photodetector can also be considered as an effective extension of the human eye. The penetration ability of mid- and far-infrared light (3-14μm) is strong, so it is widely used in the military field, and has important applications in infrared reconnaissance, infrared guidance, infrared night vision, infrared stealth and so on. For example, the U.S. Army Research Laboratory cooperated with Rockwell Scientific Corporati...

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Problems solved by technology

[0006] However, the current near-infrared photodetectors based on nanowire arrays or thin films often require the use of high-vacuum thin-film preparation technologies such as molecular beam epitaxy and physical vapor deposition, or microfabrication technologies such as ultraviolet exposure and lithography. The equipment conditions and production costs limit its promotion to a certain extent.

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