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A kind of sic particle with visible light response and preparation method thereof

A technology of visible light and particles, applied in the field of materials, can solve the problems of lattice destruction bulk phase or surface, etc., and achieve the effect of short reaction time, good visible light response performance, and clean preparation process

Active Publication Date: 2022-08-05
BEIJING JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] In order to solve the problem of lattice damage caused by the introduction of elemental impurities and a large number of defects in the bulk phase or surface in the preparation of SiC materials with visible light response, the present invention provides a SiC particle with visible light response and a preparation method thereof. The preparation method uses fast laser irradiation technology to quickly and cleanly prepare brown SiC particles. This method can not only improve the visible light response performance of SiC, but also ensure the complete crystal structure of its bulk phase, avoid SiC lattice distortion, and at the maximum To a certain extent, the generation of defects can be suppressed, and thus high-quality SiC particles can be obtained; the prepared SiC particles have good absorption of visible light, and under the action of light, they exhibit good electrical transport properties

Method used

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  • A kind of sic particle with visible light response and preparation method thereof
  • A kind of sic particle with visible light response and preparation method thereof
  • A kind of sic particle with visible light response and preparation method thereof

Examples

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Embodiment 1

[0034] A preparation method of SiC particles with visible light response, comprising the following steps:

[0035] (1) Preheating the hexagonal 6H-SiC particles (particle size is 5 μm) in a muffle furnace at 700°C for 2h;

[0036] (2) the SiC particle after preheating treatment in step (1) is soaked and etched with hydrofluoric acid HF to clean its surface, remove the oxide layer on its surface and other organic impurities attached to its surface, etc.;

[0037] (3) compressing the SiC particles obtained in step (2) on a quartz glass substrate, and ensuring that the surface flatness of the sample after the tableting is ±0.1 mm;

[0038] (4) irradiating the SiC particles subjected to the tableting treatment in step (3) for 8 seconds with a laser (there is a tableting glass between the SiC particles and the laser irradiation source) to obtain brown SiC particles, and the parameters of the laser are selected is: wavelength 1064nm; power 1W; frequency 1000Hz; pulse width 8ns;

...

Embodiment 2

[0044] A preparation method of SiC particles with visible light response, comprising the following steps:

[0045] (1) Preheating the hexagonal 6H-SiC particles (particle size is 5 μm) in a muffle furnace at 700°C for 2h;

[0046] (2) the SiC particle after preheating treatment in step (1) is soaked and etched with hydrofluoric acid HF to clean its surface, remove the oxide layer on its surface and other organic impurities attached to its surface, etc.;

[0047] (3) compressing the SiC particles obtained in step (2) on a quartz glass substrate, and ensuring that the surface flatness of the sample after the tableting is ±0.1 mm;

[0048] (4) irradiating the SiC particles subjected to the tableting treatment in step (3) for 8 seconds with a laser (there is a tableting glass between the SiC particles and the laser irradiation source) to obtain brown SiC particles, and the parameters of the laser are selected is: wavelength 532nm; power 1W; frequency 1000Hz; pulse width 8ns;

[...

Embodiment 3

[0051] A preparation method of SiC particles with visible light response, comprising the following steps:

[0052] (1) Preheating the hexagonal 6H-SiC particles (particle size is 5 μm) in a muffle furnace at 700°C for 2h;

[0053] (2) the SiC particle after preheating treatment in step (1) is soaked and etched with hydrofluoric acid HF to clean its surface, remove the oxide layer on its surface and other organic impurities attached to its surface, etc.;

[0054] (3) compressing the SiC particles obtained in step (2) on a quartz glass substrate, and ensuring that the surface flatness of the sample after the tableting is ±0.1 mm;

[0055] (4) irradiating the SiC particles subjected to the tableting treatment in step (3) for 8 seconds with a laser (there is a tableting glass between the SiC particles and the laser irradiation source) to obtain brown SiC particles, and the parameters of the laser are selected is: wavelength 1064nm; power 3W; frequency 1000Hz; pulse width 8ns;

...

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Abstract

The invention discloses SiC particles with visible light response and a preparation method thereof. The preparation method includes the following steps: (1) preheating the raw SiC particles; (2) removing the oxide layer on the surface of the SiC particles after the preheating treatment; Other organic impurities attached to its surface; (3) compressing the SiC particles obtained in the step (2); (4) irradiating the SiC particles after the tableting treatment in the step (3) with a laser, Obtain brown SiC particles; (5) after re-mixing the brown SiC particles obtained in step (4) uniformly, repeat steps (3) and (4) until the brown color of the entire powder sample is uniform. While improving the visible light response performance of SiC, the method can not only ensure the complete crystal structure of the bulk phase, avoid the distortion of the SiC lattice, but also suppress the generation of defects to the greatest extent; the prepared SiC particles have good visible light. absorption, and exhibited good electrical transport properties under photoinduced action.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a SiC particle with visible light response and a preparation method thereof. Background technique [0002] Silicon carbide (SiC) is one of the typical representatives of the third-generation semiconductors. It has excellent properties such as stable chemical properties, high thermal conductivity, high electron mobility, and high mechanical strength. devices have been more and more applications. In addition, SiC powder is one of the most widely used abrasives in industry due to its high hardness, low price, and environmental friendliness. As an excellent semiconductor material, it can effectively absorb ultraviolet light, and it is also widely used in photoreaction systems, such as photocatalytic electrode materials, photocatalytic degradation of organic pollutants, and photocatalytic water splitting to produce hydrogen. However, the wide band gap of SiC prevents i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/956B01J27/224B01J35/02
CPCC01B32/956B01J27/224B01J35/026B01J35/004B01J35/0033C01P2002/84C01P2006/60C01P2006/40
Inventor 王达杨丹丹
Owner BEIJING JIAOTONG UNIV
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