A self-driven near-infrared photodetector based on a quasi-one-dimensional nanostructure of copper sulfate potassium and its preparation method

A nanostructure, near-infrared light technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of high equipment conditions, production costs, and limited promotion, so as to reduce the difficulty and cost of preparation, easy integration, and simple preparation process easy effect

Active Publication Date: 2018-12-11
合肥庐阳科技创新集团有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the current near-infrared photodetectors based on nanowire arrays or thin films often require the use of high-vacuum thin-film preparation technologies such as molecular beam epitaxy and physical vapor deposition, or microfabrication technologies such as ultraviolet exposure and lithography. The equipment conditions and production costs limit its promotion to a certain extent.

Method used

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  • A self-driven near-infrared photodetector based on a quasi-one-dimensional nanostructure of copper sulfate potassium and its preparation method
  • A self-driven near-infrared photodetector based on a quasi-one-dimensional nanostructure of copper sulfate potassium and its preparation method
  • A self-driven near-infrared photodetector based on a quasi-one-dimensional nanostructure of copper sulfate potassium and its preparation method

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Effect test

Embodiment 1

[0037] see figure 1 , the self-driven near-infrared photodetector of the present invention is based on a planar silicon 1, and an insulating region 2 is constructed at a local position on the upper surface of the planar silicon 1; 7 S 4 KCu assembled with quasi-one-dimensional nanostructures by LB technique 7 S 4 Monolayer 3; KCu 7 S 4 Part of the single-layer film 3 is located on the insulating region 2, and the remaining part is directly in contact with the upper surface of the planar silicon, forming a Si / KCu 7 S 4 heterojunction; in KCu 7 S 4 A first metal thin film electrode 4 is deposited on the monolayer film 3, and KCu 7 S 4 The single-layer film 3 forms an ohmic contact; the first metal thin film electrode 4 is located above the insulating region 2, and does not exceed the area where the insulating region 2 is located; the second metal thin film electrode 5 is brushed on the back of the plane silicon 1, and formed with silicon. ohmic contact.

[0038] Speci...

Embodiment 2

[0055] The self-driven near-infrared photodetector and its preparation method in this embodiment are the same as those in Embodiment 1, except that the surface pressure in step D is 5 mN / m.

[0056] The self-driven near-infrared photodetector prepared in this example operates at a light intensity of 300 μW cm -2 , Under the irradiation of monochromatic light with a wavelength of 980nm, it presents remarkable photovoltaic characteristics, such as Figure 9 As shown, the open circuit voltage is 0.117V, the short circuit current is 3.27nA, and the fill factor is 16.91%.

Embodiment 3

[0058] The self-driven near-infrared photodetector and its preparation method in this embodiment are the same as those in Embodiment 1, except that the surface pressure in step D is 15 mN / m.

[0059] The self-driven near-infrared photodetector prepared in this example operates at a light intensity of 300 μW cm -2 , Under the irradiation of monochromatic light with a wavelength of 980nm, it presents remarkable photovoltaic characteristics, such as Figure 10 As shown, the open circuit voltage is 0.064V, the short circuit current is 299nA, and the fill factor is 23.52%.

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Abstract

The invention discloses a self-driven near infrared photodetector based on a potassium sulfate quasi-one-dimensional nanostructure and a preparation method thereof. The method comprises the steps that a KCu7S4 monolayer film assembled by a KCu7S4 quasi-one-dimensional nanostructure through an LB technology is transferred to an n-type silicon substrate on which an insulating region is constructed; the KCu7S4 monolayer film contacts the silicon substrate to form a Si / KCu7S4 heterojunction; a first metal thin film electrode in ohmic contact with the KCu7S4 monolayer film is deposited on the insulating region; and a second metal thin film electrode in ohmic contact with silicon is prepared on the back of the silicon substrate, and the self-driven near infrared photodetector is acquired. The self-driven near infrared photodetector provided by the invention has the advantages of simple preparation process, superior device performance and good compatibility with the existing semiconductor technology.

Description

technical field [0001] The invention relates to a self-driven near-infrared photodetector and a preparation method thereof, in particular to a self-driven near-infrared photodetector based on a quasi-one-dimensional nanostructure of copper potassium sulfate and a preparation method thereof. Background technique [0002] Photodetectors are semiconductor devices that convert light signals into electrical signals. The wavelength range that the human eye can perceive is 380-780nm, and there is a lot of infrared light in daily life, so the photodetector can also be considered as an effective extension of the human eye. Mid- and far-infrared light (3-14 μm) has strong penetrating ability, so it is widely used in the military field, and has important applications in infrared reconnaissance, infrared guidance, infrared night vision, and infrared stealth. For example, the U.S. Army Research Laboratory cooperates with Rockwell Scientific Corporation, through molecular beam epitaxy, i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/109H01L31/0336H01L31/18
CPCH01L31/0336H01L31/109H01L31/18
Inventor 吴春艳王友义徐际宇吴亚东陆杨
Owner 合肥庐阳科技创新集团有限公司
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