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Preparation method of air nanometer gap electrodes

A nano-gap electrode and air technology, applied in the field of material science, can solve the problems of difficult realization of nano-gap electrode system research, limited application of nano-gap electrodes, lack of preparation methods, etc., to achieve simple operation, elimination of time consumption, controllability strong effect

Active Publication Date: 2017-09-08
YANCHENG TEACHERS UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although these methods have their own characteristics, for traditional etching, there are still many challenges in preparing nano-gap electrodes in a precise and controllable manner. Rapid and efficient mass-fabrication of nano-gap electrodes is a key step in the construction of nano-devices
Although nanogap electrodes using monomolecules or assembled monomolecular layers as dielectric layers have been widely studied, due to the lack of precise and controllable preparation methods, it is difficult to systematically study nanogap electrodes with air as insulating dielectric layers. Largely limit the application of nanogap electrodes as electronic devices

Method used

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  • Preparation method of air nanometer gap electrodes
  • Preparation method of air nanometer gap electrodes
  • Preparation method of air nanometer gap electrodes

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Embodiment 1: processing of monocrystalline silicon wafer

[0029] Such as figure 1 As shown, the single crystal silicon wafer 1 is selected as the substrate, and the single crystal silicon wafer 1 is subjected to surface treatment and then blown dry for use. Specifically, the single crystal silicon wafer 1 is rinsed with acetone and ethanol, then blown dry with nitrogen gas, and finally placed Treat it in an air plasma cleaning machine for 2-4 minutes; or, heat and clean the monocrystalline silicon wafer with pickling solution for 60 minutes, then rinse it with water and ethanol, and finally dry it with nitrogen.

Embodiment 2

[0030] Embodiment 2: the preparation of nanometer electrode sample module for cutting

[0031] Such as figure 1 and 2 As shown, a polytetrafluoroethylene mask 2 with a rectangular hole 2 mm wide and 10 mm long was fixed on the surface of the treated clean single crystal silicon wafer 1, and then placed under vacuum conditions at a rate of 2 Å / s Metal gold is deposited by high-speed thermal evaporation, and under the masking effect of the polytetrafluoroethylene mask 2, a nano-rectangular gold film pattern with a thickness of 100 nm is formed on the surface of the silicon wafer. Take 6 mL of thiol-based photocurable resin 4 to cover the rectangular gold film pattern, the proportion of curing agent is 1 wt%, and after curing for 5 min under 50 W ultraviolet light, the photocurable resin adheres to the rectangular gold film pattern together from the single Detach from the silicon wafer and turn over the whole photocurable resin, fix the same PTFE mask on the back of the rectang...

Embodiment 3

[0032] Example 3: Nano-cutting to prepare nano-electrodes

[0033] Use a blade to trim the cuboid sample module around the gold film pattern into a trapezoidal structure module for easy cutting. The upper and lower base planes of the trapezoid are parallel to the gold film pattern plane, and the width of the lower base is smaller than that of the diamond knife. The trimmed trapezoidal structure module was fixed in the sample chuck of the ultra-thin nanoslicer. First, it was pre-cut with a glass knife so that the end of the trapezoidal structure of the module formed a smooth surface, and then replaced with a 3 mm wide diamond knife. Cut the module at a speed of 1 mm / s and perpendicular to the plane of the gold film into trapezoidal slices with a lower base of 2.5 mm, an upper base of 1.5 mm, a height of 1 mm, and a thickness of 100 nm. The obtained cut slices were collected on a glass slide substrate and dried in an oven for later use.

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Abstract

The invention discloses a preparation method of air nanometer gap electrode. The preparation method includes treatment of monocrystalline silicon pieces, preparation of a nano electrode sample module for cutting, preparation of the nanometer electrodes in nano-cutting and etching of a spacer layer. The preparation method is simple in operation, highly controllable, suitable for large-scale production and capable of preparing a great deal of nano-electrodes in a short time, and large-scale preparation capacity is achieved.

Description

technical field [0001] The invention belongs to the technical field of material science, and in particular relates to a preparation method of an air nano-gap electrode. Background technique [0002] As a new generation of circuit components, nanodevices have the characteristics of low energy consumption and high integration. However, the miniaturization of electronic devices develops relatively slowly, which limits the rapid development of the electronic industry to a certain extent. Therefore, in order to detect the properties of materials at the nanoscale or even the molecular scale, it is particularly important to prepare nanodevices or circuits. [1] . With their excellent properties and potentials, nanogap electrodes have attracted extensive attention as building blocks of electronic devices, and they are integrated with organic molecules or other nanoscale components to exhibit the functions of converters, transistors, for detection or sensing, etc. applied research ...

Claims

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Application Information

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IPC IPC(8): G01N27/30
CPCG01N27/30
Inventor 赵志远
Owner YANCHENG TEACHERS UNIV