Front face release technique of suspended microstructure
A technology of microstructure and technology, applied in the direction of microstructure technology, microstructure device, manufacturing microstructure device, etc., can solve the problems of insufficient release time, adhesion of suspended microstructure and substrate, etc., and achieve the effect of occupying a small chip area
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[0026] Embodiment: Utilize the suspended microstructure front release technology provided by the present invention to manufacture an electrothermal excitation / piezoresistive detection micro-bridge resonator, and its fabrication and front release process are as follows:
[0027] 1. The original silicon wafer is a heavily doped silicon wafer (1) with a (100) plane and a resistivity equal to 0.01Ω.cm. Standard cleaning, if attached figure 2 As shown in [1].
[0028] 2. Thermally oxidize and grow silicon dioxide film (6) at 1100°C, with a thickness of 0.6 μm, as attached figure 2 As shown in [2].
[0029] 3. Deposit polysilicon film (7) by low-pressure chemical vapor deposition method, with a thickness of 0.6 μm, as attached figure 2 Shown in [3].
[0030] 4. Ion-implanted boron, activated in a nitrogen environment at 950°C for 30 minutes, photolithographically etched the pattern of the polysilicon resistor (8), etched the polysilicon film (7) outside the resistance area, a...
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