Method for manufacturing storage unit, storage unit and memory

Abstract

The invention provides a manufacturing method of a memory unit, a memory unit and a memory, by providing a substrate with a word line; forming a gate electrode; forming a work function layer whose length direction forms a first angle with the word line; depositing an active layer; forming sidewalls; forming drain electrodes and bit lines, where the bit lines form a second angle with the extending direction of the active layer and form a third angle with the word lines; form a protective layer for the bit lines; form a multi-dielectric layer; etch the multi-dielectric layer, A stepped capacitor trench is formed, and a capacitor and an upper electrode are formed. In the present invention, the raised channel region of the transistor is distributed along the side and the top surface of the work function layer to form a vertical channel transistor structure, effectively suppressing the short channel effect, so that the transistor can have good performance in the case of process miniaturization; the capacitor adopts Step-shaped grooves are prepared, with double-layer dielectric layers, which effectively increases the area of ​​the capacitor, thereby increasing the capacitance; in addition, the area occupied by the repeating unit in the memory unit can reach 4F2, which has a high degree of integration.

Description

technical field [0001] The invention relates to a method for manufacturing a storage unit, a storage unit and a memory, in particular to a method for manufacturing a storage unit with a unit area of ​​4F2, a storage unit and a memory. Background technique [0002] Dynamic Random Access Memory (English: Dynamic Random Access Memory, DRAM for short) is a semiconductor memory widely used in computer systems. DRAM is composed of a plurality of memory cells, and each memory cell usually includes a transistor and a capacitor; the gate of the transistor is electrically connected to the word line, the source is electrically connected to the bit line, the drain electrode is electrically connected to the capacitor, and the word line voltage on the word line The on and off of the transistor can be controlled, so that the data information stored in the capacitor can be read through the bit line, or the data information can be written into the capacitor. [0003] In order to prepare mor...

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for manufacturing a storage unit, a storage unit and a memory, which are used to solve the problem of device performance degradation caused by process scaling in the prior art, and improve the integration degree of DRAM

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