Preparation method of IBC battery

A technology of batteries and silicon wafers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems affecting the yield of IBC batteries and large damage to silicon wafers, and achieve the effect of reducing production costs and simplifying the process

Inactive Publication Date: 2017-10-20
YINGLI ENERGY CHINA
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Problems solved by technology

[0004] At present, the traditional doping of the P region and N region and the front surface of the cross structure on the back of the IBC battery is generally formed by high-temperature diffusion under the condition of

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  • Preparation method of IBC battery
  • Preparation method of IBC battery

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[0028] In the following description, specific details such as specific system structures and technologies are presented for the purpose of illustration rather than limitation, so as to thoroughly understand the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the invention may be practiced in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.

[0029] It should be understood that when used in this specification and the appended claims, the terms "comprising" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude one or Presence or addition of multiple other features, integers, steps, operations, elements, components and / or collections thereof.

[0030] It ...

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Abstract

The invention is applicable to the technical field of the preparation of solar cells. The invention provides a preparation method of an IBC battery. Through using the ion implantation technology, a back surface and a front surface of a silicon wafer which forms a suede are subjected to phosphorus doping treatment. The plasma enhanced chemical vapor deposition method is used to carry out diffusion mask processing on the back surface and the front surface of the silicon wafer. A diffusion mask and an ion-doped layer in a P+ area on the back surface of silicon wafer are removed. The boron tribromide diffusion of the silicon wafer is carried out in a preset temperature, a P type area is formed at the back surface of the silicon wafer, and the square resistance of the P type area is controlled in a first preset range. An ion doping layer is activated to form a back field and a front field, the square resistance of the back field is controlled in a second preset range, and the square resistance of the front field is controlled in a third preset range. According to the embodiment of the invention, the ion implantation can be realized to carry out phosphorus doping treatment, the high temperature of the boron tribromide diffusion is used to realize the activation of the ion implantation impurities, a flow of IBC battery manufacturing can be simplified, and the production cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of solar cell preparation, and in particular relates to a method for preparing an IBC cell. Background technique [0002] IBC (Interdigitated Back Contact) battery means that the front of the battery has no electrodes, and the metal grid lines of the positive and negative electrodes of the battery are interdigitated and arranged on the back of the battery. The biggest feature of the IBC battery is that the PN junction and metal contact are on the back of the battery, and the front is not affected by the metal electrode shielding, so it has a higher short-circuit current. At the same time, the back can allow wider metal grid lines to reduce series resistance, thereby improving filling. Factor; together with the open circuit voltage gain brought about by the good passivation of the front surface of the battery, this kind of battery with an unobstructed front not only has high conversion efficiency, but also lo...

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Application Information

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IPC IPC(8): H01L31/18H01L31/068
CPCH01L31/0682H01L31/1804Y02E10/547Y02P70/50
Inventor 刘大伟王子谦翟金叶李锋史金超宋登元
Owner YINGLI ENERGY CHINA
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