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Integrated graphene molybdenum disulfide photoelectric detector with visible light wave bands and preparation method therefor

A technology of photodetectors and molybdenum disulfide, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of miniaturization and flattening bottlenecks of device systems

Active Publication Date: 2017-11-03
SUN YAT SEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Light is an important carrier of information transmission. Photodetectors are one of the most widely used optoelectronic devices in optical communication systems. Traditional semiconductor photodetectors have encountered bottlenecks in the miniaturization and flattening of device systems.

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  • Integrated graphene molybdenum disulfide photoelectric detector with visible light wave bands and preparation method therefor
  • Integrated graphene molybdenum disulfide photoelectric detector with visible light wave bands and preparation method therefor
  • Integrated graphene molybdenum disulfide photoelectric detector with visible light wave bands and preparation method therefor

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Embodiment Construction

[0034] The integrated photodetector of the visible light band and the preparation method thereof of the present invention will be described in detail below with reference to the accompanying drawings.

[0035] The accompanying drawings are for illustrative purposes only, and should not be construed as limitations on the present patent; in order to better illustrate the present embodiment, some parts of the accompanying drawings are enlarged or reduced, and do not represent the size of the actual product.

[0036] refer to figure 1 , figure 2 and image 3 , a photodetector with integrated graphene molybdenum disulfide in the visible light band of the present invention includes: SU8 waveguide 1, continuous single-layer graphene 2, continuous single-layer molybdenum disulfide 3, silicon nitride waveguide layer 4, two Terminal metal electrode (drain-source) 5, dielectric silicon dioxide dielectric layer 6, substrate single crystal silicon (back gate electrode) 7; the thickness ...

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Abstract

The invention relates to an integrated graphene molybdenum disulfide photoelectric detector with visible light wave bands and a preparation method therefor. The visible light optical detector provided by the invention comprises a monocrystalline silicon substrate, a silicon dioxide dielectric layer, a silicon nitride waveguide layer, an SU8 waveguide, a continuous molybdenum disulfide layer, a continuous graphene layer and metal electrodes. Based on the single molybdenum disulfide layer which has strong absorption on visible light and super-high electron mobility on graphene, the high-responsivity optical detector at the visible light wave band is obtained; and result analysis proves that the responsivity of the integrated graphene molybdenum disulfide photoelectric detector with visible light wave bands can reach 32A / W, and the detector can be used for manufacturing a large-scale integrated photoelectric system.

Description

technical field [0001] The invention relates to the technical field of photoelectric elements, in particular to an integrated photoelectric detector in the visible light band and a preparation method thereof. Background technique [0002] Light is an important carrier of information transmission. Photodetectors are one of the most widely used optoelectronic devices in optical communication systems. Traditional semiconductor photodetectors have encountered bottlenecks in coping with the miniaturization and flattening of device systems. In recent years, with the rise of graphene and graphene-like materials, the development of these nanomaterials has opened the door to new types of photodetectors. [0003] Graphene is a quasi-two-dimensional material with a thickness of only one atomic layer. Due to its excellent strength, flexibility, transparency, electrical conductivity, and thermal conductivity, it has been greatly developed in the field of optoelectronics. Graphene-like m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/113H01L31/0232H01L31/032H01L31/18
CPCH01L31/02327H01L31/032H01L31/113H01L31/18
Inventor 陈钰杰张天佑吴泽儒张彦峰余思远
Owner SUN YAT SEN UNIV