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Preparation method of high-density and high-conductivity ITO (indium tin oxide) target material

A high-conductivity, high-density technology, applied in the field of high-density, high-conductivity ITO target preparation, can solve the problems of limited target size, high cost, unfavorable industrial production, etc., to reduce hard agglomeration and promote densification. , the effect of improving sintering activity

Inactive Publication Date: 2017-11-07
ANHUI TUOJITAI NOVEL CERAMIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the production process of hot isostatic pressing after cold isostatic pressing can increase the relative density of the ITO target to more than 99%, the high cost is not conducive to industrial production, and the size of the target produced is limited

Method used

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  • Preparation method of high-density and high-conductivity ITO (indium tin oxide) target material

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Embodiment 1

[0025] This embodiment provides a method for preparing a high-density, high-conductivity ITO target, comprising the following steps:

[0026] (1) Preparation of bismuth and germanium mixed solution: high-purity Ge and Bi raw materials are dissolved into a clarified solution of bismuth nitrate hydrofluoric acid and germanium with hydrofluoric acid and nitric acid mixed solution;

[0027] (2) Preparation of indium oxide and tin oxide solutions containing urea: urea, indium oxide, and tin oxide were dissolved in water respectively, and then mixed together; In 2 o 3 :SnO 2 =90:10, the addition of urea is based on the pH>8.0 of the solution after the precipitation in step (3) is complete;

[0028] (3) Co-precipitation: Add the mixed solution of bismuth and germanium to the mixed solution configured in step (2), wherein the content of bismuth and germanium is 0.5% of the total amount of In and Sn, and Bi:Ge=1:1, keeping Stir, gradually raise the temperature to 90°C and keep the t...

Embodiment 2

[0035] This embodiment provides a method for preparing a high-density, high-conductivity ITO target, comprising the following steps:

[0036] (1) Preparation of bismuth and germanium mixed solution: high-purity Ge and Bi raw materials are dissolved into a clarified solution of bismuth nitrate hydrofluoric acid and germanium with hydrofluoric acid and nitric acid mixed solution;

[0037] (2) Preparation of indium oxide and tin oxide solutions containing urea: urea, indium oxide, and tin oxide were dissolved in water respectively, and then mixed together; In 2 o 3 :SnO 2 =90:10, the addition of urea is based on the pH>8.0 of the solution after the precipitation in step (3) is complete;

[0038] (3) Co-precipitation: Add the mixed solution of bismuth and germanium to the mixed solution configured in step (2), wherein the content of bismuth and germanium is 0.5% of the total amount of In and Sn, and Bi:Ge=1:1, keeping Stir, gradually raise the temperature to 90°C and keep the t...

Embodiment 3

[0045] This embodiment provides a method for preparing a high-density, high-conductivity ITO target, comprising the following steps:

[0046] (1) Preparation of bismuth and germanium mixed solution: high-purity Ge and Bi raw materials are dissolved into a clarified solution of bismuth nitrate hydrofluoric acid and germanium with hydrofluoric acid and nitric acid mixed solution;

[0047] (2) Preparation of indium oxide and tin oxide solutions containing urea: urea, indium oxide, and tin oxide were dissolved in water respectively, and then mixed together; In 2o 3 :SnO 2 =90:10, the addition of urea is based on the pH>8.0 of the solution after the precipitation in step (3) is complete;

[0048] (3) Co-precipitation: Add the mixed solution of bismuth and germanium to the mixed solution configured in step (2), wherein the content of bismuth and germanium is 0.5% of the total amount of In and Sn, and Bi:Ge=1:1, keeping Stir, gradually raise the temperature to 90°C and keep the te...

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Abstract

The invention discloses a preparation method of a high-density and high-conductivity ITO (indium tin oxide) target material. The preparation method comprises steps as follows: high-purity Ge and Bi raw materials are dissolved with a hydrofluoric acid and nitric acid mixed solution, settled solutions of hydrofluoric acid germanium nitrate and hydrofluoric acid bismuth nitrate are produced, the two solutions are mixed with a urea-containing indium oxide and tin oxide solution respectively, stirring is kept, the temperature is gradually increased to 90 DEG C, and constant-temperature treatment is performed for 1 h until precipitation is completely finished; precipitates are washed with deionized water and an organic mixed solvent until no Cl<-> ions exist; the precipitates are dried and calcined, and ITO powder containing Bi and Ge is obtained; 2% of PVA is added, a mixture is granulated, subjected to compression molding and sintered in flowing oxygen atmosphere, and the ITO target material is obtained. With the adoption of a coprecipitation method and addition of sintering aids, uniform distribution of atomic size is realized, the sintering temperature is obviously reduced, densification is promoted, and electrical conductivity of the target material is improved.

Description

technical field [0001] The invention relates to the technical field of preparation of functional ceramics, in particular to a method for preparing a high-density, high-conductivity ITO target. Background technique [0002] The ITO film can be prepared by the magnetron sputtering method from the ITO target material. In industrial production, the magnetron sputtering method is mostly used to sputter the ITO target material on the glass into a very thin layer of transparent conductive film (thickness is about 100nm). ), etch the film to prepare electrode materials for flat panel displays. [0003] To prepare a high-quality ITO film, an ITO target with good uniformity and high density must be used. This is because there are many holes in the low-density target, and the uncertain elements in the holes also enter the ITO film during the sputtering process, thereby affecting the conductivity of the ITO film. In addition, the low-density ITO target surface is prone to produce some...

Claims

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Application Information

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IPC IPC(8): C04B35/01C04B35/64
Inventor 张天舒孔令兵蒋卫国宋晓超
Owner ANHUI TUOJITAI NOVEL CERAMIC TECH