All-Silicon Distributed Feedback Laser

A distributed feedback, laser technology, applied in the laser field, can solve the problems of incompatibility, complex production process, high production cost, etc., and achieve the effect of avoiding incompatibility, compact structure and low cost

Active Publication Date: 2019-10-15
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the semiconductor material is always used as a foreign material, and its introduction is not compatible with the traditional all-silicon process, which leads to complex production process and high production cost of this technology

Method used

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  • All-Silicon Distributed Feedback Laser
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  • All-Silicon Distributed Feedback Laser

Examples

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Embodiment Construction

[0045] The following examples are used to illustrate the present invention, but not to limit the present invention.

[0046] 1. Raw material and formula:

[0047] Substrate: polished on both sides, volume is 20×20×0.2mm 3 High temperature resistant quartz substrate;

[0048] Template self-assembly anti-sticking layer: 1H, 1H, 2H, 2H-Perfluorooctyltrichlorosilane, Microresist technology company;

[0049] Template adhesion layer: OrmoPrime, Micro resist technology company;

[0050] Template raster layer: OrmoStamp, Micro resist technology company;

[0051] Buff materials: Dow Corning FOx-1x and FOx-2x Flowable Oxides, Dow Corning Corporation;

[0052] Substrate cleaning solution: alcohol (analytical grade), acetone (analytical grade), Sinopharm Chemical Reagent Co., Ltd.;

[0053] 2. Process parameter setting:

[0054] Preparation conditions: room temperature, clean environment;

[0055] Annealing temperature: 1100°C;

[0056] Annealing time: 60 minutes;

[0057] Subseq...

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Abstract

The invention belongs to the laser technology field and especially relates to an all-silicon distributed feedback laser. A resonant cavity of the laser is formed through directly imprinting a Bragg grating on a nano-crystalline film. Simultaneously, the nano-crystalline film provides an optical gain so that the distributed feedback laser is formed. The nano-crystalline film is formed through carrying out heat annealing conversion on photoresist HSQ, and then high pressure hydrogen passivation processing is performed so that the nano-crystalline film possesses a high optical gain equivalent to that of a conventional laser semiconductor material. The Bragg grating is manufactured through a nanometer imprinting technology and a grating period corresponds to a second-order Bragg resonance condition of a laser wavelength. Laser light possesses high diffraction efficiency along a direction vertical to a grating surface direction and vertical emitting of the laser light can be realized. The invention provides a on-chip laser of an all-silicon material. The laser structure is compact and cost is low. A disadvantage that a silicon-based laser based on a semiconductor gain material is not compatible with a traditional silicon technology is avoided.

Description

technical field [0001] The invention belongs to the field of laser technology, and in particular relates to an all-silicon distributed feedback (Distributed Feedback, DFB for short) laser. Background technique [0002] There were two great inventions in the 20th century: the electronic computer and the laser. These two inventions had a huge social impact and promoted the industrial revolution. The photoelectric integration technology that combines the two is more likely to generate explosive growth in computing power. And because the current mature integrated circuit technology is based on the silicon process platform, the limited solution of optoelectronic integration is based on the mature silicon integration technology. Therefore, as another component of this technology, the silicon-based light source has become an urgent problem to be solved. In the 1990s, the luminescence of porous silicon was discovered and triggered a research boom. However, the mechanical fragili...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/12H01S5/30
Inventor 王东辰张驰陆明吴翔张树宇
Owner FUDAN UNIV
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