Method for preparing zinc oxide nanopillar array

A zinc oxide nano- and nano-column array technology, which is applied in the field of nano-materials, can solve the problems of poor array order and uneven size of zinc oxide nano-column arrays, and achieve the effects of improving order, easy promotion, and convenient operation

Inactive Publication Date: 2017-11-14
NANJING UNIV OF INFORMATION SCI & TECH
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Problems solved by technology

However, the size of the zinc oxide nanocolumn array prepared by the above-mentioned method is not uniform, and the order degree of the array is poor.

Method used

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  • Method for preparing zinc oxide nanopillar array
  • Method for preparing zinc oxide nanopillar array

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Embodiment 1

[0022] 1. Deposit a Si3N4 film with a thickness of 40 nm on GaN by plasma enhanced chemical vapor deposition (PECVD), and then use nanoimprint lithography to make nano-array patterns, and use reactive ion etching technology to etch Si3N4 to prepare GaN templates with nanoarray patterns were obtained. The prepared GaN template was immersed in dilute hydrochloric acid (4%) solution, and cleaned in an ultrasonic cleaner for 10 minutes; rapid thermal annealing was performed at 700°C for 10 minutes under a nitrogen atmosphere (to remove residual organic matter on the surface of the GaN template); the annealed GaN The template was immersed in dilute hydrochloric acid (4%) solution again, and cleaned in an ultrasonic cleaner for 10 minutes; the GaN template was cleaned with deionized water, and finally dried with nitrogen for later use.

[0023] 2. Prepare Zn(NO3)2 and hexamethylphosphate triamide solution (hexamethylenetetramine, referred to as HMTA), put the prepared solution in th...

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Abstract

The invention provides a method for preparing a zinc oxide nanopillar array. According to the method, the current micro-electronic processing technology with technical maturity is utilized. The method comprises the following steps: by taking an aqueous solution of Zn(NO3)2 and hexamethylphosphoramide as a precursor solution for growth of a ZnO nanopillar array on a GaN template with nano-array patterns, preparing the ZnO nanopillar array with ordered height and uniform size through gravity-assisted inverted growth by adopting a hydrothermal method. The nano-array templates of different patterns are manufactured to grow different ZnO nanopillar arrays; and the nanopillar size is regulated by adjusting the concentration of the Zn(NO3)2 and hexamethylphosphoramide and the growth temperature of the nanopillar array. According to the method disclosed by the invention, various ZnO nanopillar arrays with ordered heights and uniform sizes can be prepared by adjusting different process parameters.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a preparation method of a zinc oxide nanocolumn array. Background technique [0002] ZnO is a wide-bandgap semiconductor material with direct bandgap, which has very attractive application prospects in the fields of short-wavelength light-emitting diodes, laser diodes, and capacity storage. ZnO nanoarrays have unique optoelectronic properties and have flat end faces that can be used as micro-Faper cavities, which provide convenient conditions for the construction of ZnO nanolasers. The application in the field of microelectronics and optoelectronics can improve the working characteristics of the device, such as making ZnO nano-array structure on the surface of the LED, using the surface scattering and light waveguide mechanism to improve the light extraction efficiency of the LED; assembling the ZnO nano-array on the surface of the solar cell as an anti-re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02
CPCC01G9/02C01P2004/03C01P2004/11C01P2004/52C01P2004/61
Inventor 刘战辉张李骊李庆芳张雅男邵绍峰
Owner NANJING UNIV OF INFORMATION SCI & TECH
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