Method for preparing zinc oxide nanopillar array
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- NANJING UNIV OF INFORMATION SCI & TECH
- Publication Date
- 2017-11-14
- Estimated Expiration
- Not applicable Β· inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a preparation method of a zinc oxide nanocolumn array. Background technique
[0002] ZnO is a wide-bandgap semiconductor material with direct bandgap, which has very attractive application prospects in the fields of short-wavelength light-emitting diodes, laser diodes, and capacity storage. ZnO nanoarrays have unique optoelectronic properties and have flat end faces that can be used as micro-Faper cavities, which provide convenient conditions for the construction of ZnO nanolasers. The application in the field of microelectronics and optoelectronics can improve the working characteristics of the device, such as making ZnO nano-array structure on the surface of the LED, using the surface scattering and light waveguide mechanism to improve the light extraction efficiency of the LED; assembling the ZnO nano-array on the surface of the solar cell as an anti-re...