Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of highly conductive graphene film and preparation method thereof

A graphene film, high conductivity technology, applied in chemical instruments and methods, cable/conductor manufacturing, conductive layers on insulating carriers, etc., can solve problems such as difficult control, complex chemical reactions, etc. The process is simple and easy to implement, and the effect of improving electrical conductivity

Active Publication Date: 2019-02-15
PEKING UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This approach often involves complex chemical reactions that are difficult to control

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of highly conductive graphene film and preparation method thereof
  • A kind of highly conductive graphene film and preparation method thereof
  • A kind of highly conductive graphene film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Embodiment 1, improve the chemical functionalization method of graphene thin film conductivity

[0053] Such as figure 1 Shown is the schematic diagram of the method of the present invention.

[0054] Such as figure 2 Shown, be the technological installation figure of the inventive method, concrete steps are as follows:

[0055] 1) The growth of graphene on the copper foil substrate adopts a low-pressure chemical vapor deposition system (LPCVD).

[0056]Copper foil (purity 99.8%, thickness 25 microns) was annealed in a hydrogen atmosphere for 30 minutes at 1000 ° C, the hydrogen flow rate was 300 sccm, and the system pressure was maintained at 350 Pa, and then annealed in an argon atmosphere for 30 minutes, and the argon flow rate was 500sccm, the system pressure is maintained at 500Pa. The function of annealing under hydrogen atmosphere is to reduce the oxide layer on the surface of copper foil, and the function of annealing under argon atmosphere is to reduce the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a high-conductivity graphene thin film and a preparation method thereof. The preparation method comprises the following steps of sequentially arranging a graphene thin film / copper foil composite film structure and a polyacrylonitrile fiber film / copper foil composite film structure in a quartz cavity along an air flow direction of a carrier gas, introducing the carrier gas, rising a temperature, and performing gas-phase reaction under a vacuum condition, thereby obtaining the high-conductivity graphene thin film, wherein the graphene thin film / copper foil composite film structure is a composite structure of a copper foil and a graphene thin film coated on a surface of the copper foil, and the polyacrylonitrile fiber film / copper foil composite film structure is a composite structure of a copper foil and a polyacrylonitrile fiber film coated on a surface of the copper foil. The process is simple and practical, the related electrostatic spinning and low-voltage chemical vapor deposition (CVD) are mature technologies, and the function of gas-phase reaction on the graphene thin film is high-efficiency and uniform; and the conductivity of the functionalized graphene thin film is improved by 40% or above and is very remarkable, and the influence on the transmitting of the graphene thin film is very low.

Description

technical field [0001] The invention relates to a high-conductivity graphene film and a preparation method thereof. Background technique [0002] Graphene is composed of a single layer of carbon atoms with sp 2 The two-dimensional material formed by hybridization has stable physical and chemical properties, excellent mechanical strength, and excellent electrical and thermal conductivity. It is widely used in many fields, especially as a flexible transparent conductive film for the next generation of flexible electronics. Devices, flexible touch screens, etc. Compared with traditional transparent conductive films (ITO, AZO, conductive polymers, etc.), the conductivity of graphene films is relatively small. Therefore, it is necessary to develop stable methods to improve the electrical conductivity of graphene films. At present, the methods for improving the conductivity of graphene films include the following categories: 1. The atom substitution of graphene lattice, such as...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/14H01B13/00B32B9/04B32B15/04B32B15/20B32B27/36
CPCB32B9/04B32B15/04B32B15/20B32B27/36H01B5/14H01B13/00
Inventor 彭海琳党文辉邓兵
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com