Unlock instant, AI-driven research and patent intelligence for your innovation.

A dielectric filled metal grating-semiconductor SPP source and manufacturing method thereof

A metal grating, medium filling technology, applied in the direction of waveguide, waveguide type device, circuit, etc., to achieve the effect of high process compatibility, high coupling efficiency and simple process

Active Publication Date: 2020-08-14
SUN YAT SEN UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the current research is still in its infancy. How to efficiently couple the luminescence of the active region to the metal micro-nano structure to form SPP is still one of the important problems in the research of integrated SPP sources.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A dielectric filled metal grating-semiconductor SPP source and manufacturing method thereof
  • A dielectric filled metal grating-semiconductor SPP source and manufacturing method thereof
  • A dielectric filled metal grating-semiconductor SPP source and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] A method for manufacturing the SPP source of a dielectric-filled metal grating-semiconductor composite structure, comprising the following process steps:

[0044] Step 1: GaAs-based epitaxial material is grown on N-type GaAs substrate 11 by metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). The epitaxial material includes N-type AlGaAs 12 , quantum well 13 , and P-type AlGaAs capping layer 14 . as attached figure 1 shown. The central wavelength of quantum well electroluminescence is 850nm.

[0045] Step 2: Evaporate a Ti / Au metal layer 21 on the back of the GaAs substrate 11 to form an ohmic contact with the N-type GaAs substrate. as attached figure 2 shown.

[0046] Step 3: Evaporate Au 31 on the surface of the P-type AlGaAs capping layer with a thickness of 200nm. as attached image 3 shown.

[0047]Step 4: using focused ion beam etching to form an inclined Au grating structure on the Au surface of the P-type AlGaAs capping layer...

Embodiment 2

[0053] A method for manufacturing the SPP source of a dielectric-filled metal grating-semiconductor composite structure, comprising the following process steps:

[0054] Step 1: GaN-based epitaxial material is grown on the sapphire substrate 71 by metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). The epitaxial material includes N-type GaN 72 , quantum well 73 , and P-type GaN capping layer 74 . The central wavelength of quantum well electroluminescence is 550nm.

[0055] Step 2: Etching device units on the semiconductor epitaxial layer to expose the N-type GaN 72 .

[0056] Step 3: Evaporate Cr / Au 75 on the surface of the etched N-type GaN to form an ohmic contact with the N-type GaN.

[0057] Step 4: Ag 150nm is evaporated on the surface of the P-type GaN capping layer.

[0058] Step 5: using focused ion beam etching to form an inclined Ag grating structure on the Ag surface of the P-type GaN capping layer to obtain an Ag layer 76 with a grat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
heightaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a dielectric-filled metal grating-semiconductor composite structure SPP source and a manufacturing method thereof. The dielectric-filled metal grating-semiconductor composite structure SPP source comprises a first metal layer, a substrate, a semiconductor epitaxial layer, a second metal layer and a dielectric layer. The second metal layer comprises a metal grating structure; and the dielectric layer fills the metal grating. The dielectric layer plays a waveguide role, and limits the SPP to be propagated in the waveguide layer, thereby improving output light extraction efficiency, unidirectional coupling efficiency and unidirectional ratio of the light.

Description

technical field [0001] The invention relates to a surface plasmon device and a manufacturing method thereof. More specifically, it relates to an electrically injected surface plasmon device with a dielectric-filled metal grating-semiconductor structure and a manufacturing method thereof. Background technique [0002] Modern high-capacity information processing technology puts forward higher requirements for miniaturized integrated circuit devices. However, traditional dielectric optical waveguide devices cannot break through the diffraction limit due to the influence of photon fluctuations, and it is difficult to further reduce the device size. Surface plasmon polaritons (Surface Plasmon Polariton, SPP) can localize the incident light in the sub-wavelength region of the metal surface, which provides a new idea to solve the above problems, and is very important for the realization of extremely small feature sizes and dielectrics of nanoelectronic devices. The ultra-high tran...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01P3/08
CPCH01P3/081
Inventor 刘文杰金崇君
Owner SUN YAT SEN UNIV