Doped 4H-SiC substrate heterojunction spin field effect transistor based on Cr and manufacturing method thereof
A field-effect transistor and heterojunction technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of energy band structure mismatch and spin injection efficiency of only a few percent, and achieve Small surface effects, improved spin injection and reception efficiency, and simple manufacturing effects
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Embodiment 1
[0041] See figure 1 , figure 1 A schematic diagram of a heterojunction spin field effect transistor based on a Cr-doped 4H-SiC substrate and its preparation method provided by an embodiment of the present invention. The method comprises the steps of:
[0042] Step a, select 4H-SiC substrate;
[0043] Step b, using the MBE process to grow Ga on the surface of the 4H-SiC substrate 2 o 3 epitaxial layer;
[0044] Step c, using an ion implantation process on the Ga 2 o 3 The epitaxial layer forms source and drain regions;
[0045] Step d, forming a source region ohmic contact electrode and a drain region ohmic contact electrode in the source region and the drain region respectively;
[0046] Step e, using magnetron sputtering process on the Ga 2 o 3 A Schottky contact gate electrode is formed on the surface of the epitaxial layer.
[0047] Wherein, step b may include:
[0048] At a temperature of 940°C, the power of the RF source is 300W, and the pressure is 1.5×10 -5 T...
Embodiment 2
[0069] See figure 2 , figure 2 A schematic diagram of a device based on a Cr-doped 4H-SiC substrate heterojunction spin field effect transistor provided by an embodiment of the present invention. The heterojunction spin field effect transistor based on Cr-doped 4H-SiC substrate includes: 4H-SiC substrate 201, Cr-doped Ga 2 o 3 Source region 202, Cr-doped Ga 2 o 3 Drain region 203, Ga 2 o 3 Channel region 204, Schottky contact gate electrode 205, SiO 2 The isolation layer 206 , the ohmic contact electrode 207 in the source region, and the ohmic contact electrode 208 in the drain region, the heterojunction spin field effect transistor based on the Cr-doped 4H-SiC substrate is prepared by the method described in the above-mentioned embodiments.
[0070] The beneficial effects of the present invention are specifically:
[0071] 1. The heterojunction spin field effect transistor and its manufacturing method of the present invention can change the doping concentration and ...
Embodiment 3
[0076] See Figure 3a-Figure 3g A process schematic diagram of a Cr-doped 4H-SiC substrate based heterojunction spin field effect transistor provided by an embodiment of the present invention. On the basis of the above embodiments, this embodiment will introduce the process flow of the present invention in more detail. The method includes:
[0077] Step 301, select the 4H-SiC substrate 301, and use acetone and alcohol to ultrasonically clean the 4H-SiC substrate 301 for 5 minutes, such as Figure 3a shown;
[0078] Step 302, at a temperature of 940°C, the power of the radio frequency source is 300W, and the pressure is 1.5×10 -5 Torr, the evaporation source materials Ga and Sn, the mass fractions are 99.99999% and 99.999% respectively, and the thickness is 0.4-0.6 μm grown on the surface of 4H-SiC substrate 301 by MBE process, and the doping concentration is 1×10 14 -1×10 16 cm -3 Ga 2 o 3 Epitaxial layer 302, such as Figure 3b shown;
[0079] Preferably, the growth...
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