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A Heterojunction Gas Sensor with Inorganic-Organic Composite Structure

A gas sensor and composite structure technology, applied in the direction of material resistance, can solve the problems that restrict the application of organic-organic heterojunction sensors, the unstable properties of organic semiconductor structures, and the low concentration of interface charge accumulation, so as to achieve diversified detection methods, The effect of simple structure and low production cost

Active Publication Date: 2020-02-18
SHANGHAI UNIV OF ENG SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, organic-organic heterojunction sensors have the disadvantages of low interface charge accumulation concentration and unstable organic semiconductor structure (especially for N-type organic semiconductor materials), and it is difficult to perform further processing on the surface of organic semiconductors (such as photolithography) , which seriously restrict the application of organic-organic heterojunction sensors

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  • A Heterojunction Gas Sensor with Inorganic-Organic Composite Structure
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  • A Heterojunction Gas Sensor with Inorganic-Organic Composite Structure

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Embodiment 1

[0042] The gas sensor of the inorganic-organic composite structure heterojunction in this embodiment adopts the top contact form, such as figure 1 As shown, it includes: an inorganic semiconductor layer 2 , an organic semiconductor layer 3 and a metal electrode 4 are sequentially arranged on a substrate 1 .

[0043] The inorganic semiconductor layer 2 is prepared by magnetron sputtering; the organic semiconductor layer 3 is deposited by vacuum thermal evaporation; the metal electrode 4 is prepared by vacuum thermal evaporation deposition, and the metal electrode is located above both ends of the organic semiconductor layer 3 . The appearance of the metal electrodes at both ends of the functional layer adopts the shape of fingers, such as image 3 shown.

[0044] specifically:

[0045]Substrate 1 is a glass substrate;

[0046] The inorganic semiconductor layer 2 is an N-type inorganic semiconductor material with a thickness of 50 nanometers, and the material is indium galliu...

Embodiment 2

[0050] The gas sensor of the inorganic-organic composite structure heterojunction in this embodiment adopts the bottom contact form, such as figure 2 As shown, it includes: an inorganic semiconductor layer 2 and an organic semiconductor layer 3 are sequentially arranged on the substrate 1. The difference from Embodiment 1 is that the sensor in this embodiment adopts a bottom contact form, and the metal electrode 4 is arranged on the inorganic semiconductor layer. 2, and the metal electrode 4 is located on both sides of the organic semiconductor layer 3, the metal electrode 4 is connected to the organic semiconductor layer 3 and the inorganic semiconductor layer 2, that is, after the inorganic semiconductor layer 2 is prepared, the metal electrode 4 is firstly formed. preparation, followed by the preparation of the organic semiconductor layer 3.

[0051] The inorganic semiconductor layer 2 is prepared by magnetron sputtering; the organic semiconductor layer 3 is prepared by so...

Embodiment 3

[0058] The gas sensor with an inorganic-organic composite structure heterojunction in this embodiment adopts a bottom contact structure, which includes: an inorganic semiconductor layer 2 and an organic semiconductor layer 3 are sequentially arranged on a substrate 1, and the difference from Embodiment 1 lies in: this embodiment The sensor adopts the bottom contact form, the metal electrode 4 is arranged above the two ends of the inorganic semiconductor layer 2, and the metal electrode 4 is located on both sides of the organic metal layer 3, and the metal electrode 4 is connected to both the organic semiconductor layer 3 and the inorganic semiconductor layer 2 , that is, after the inorganic semiconductor layer 2 is prepared, the metal electrode 4 is prepared first, and then the organic semiconductor layer 3 is prepared.

[0059] The inorganic semiconductor layer 2 is prepared by a sol-gel method; the organic semiconductor layer 3 is prepared by a vacuum thermal evaporation meth...

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Abstract

The invention relates to a heterojunction gas sensor with an inorganic-organic composite structure. The heterojunction gas sensor comprises a substrate and a functional layer arranged on the substrate, wherein the functional layer comprises an inorganic semiconductor layer and an organic semiconductor layer; the inorganic semiconductor layer is located above the substrate; the organic semiconductor layer is located above the inorganic semiconductor layer; metal electrodes are arranged at two ends of the functional layer, and quantitative determination of gas is performed by detecting current at two ends of the metal electrodes. Compared with the prior art, the heterojunction gas sensor has the advantages of being simple in structure, low in manufacturing cost, high in sensitivity, easy tointegrate and the like, and the preparation method is diversified.

Description

technical field [0001] The invention relates to a gas sensor, in particular to a heterojunction gas sensor with an inorganic-organic composite structure. Background technique [0002] Sensors are necessary means of information collection for modern information systems and various equipment, and sensing technology has become an essential technology in modern information technology. Gas sensor is an important branch of sensing technology, which can convert the information related to gas type and concentration into electrical signal, so as to detect, monitor, analyze and alarm. Since 1964, Wickens et al. used the oxidation-reduction reaction of gas on the electrode to prepare the first gas sensor, gas sensors began to flourish all over the world. According to the gas-sensitive material used in the gas sensor and the effect of the interaction with the gas to be measured, the gas sensor is mainly divided into semiconductor gas sensor, solid electrolyte gas sensor, contact combus...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12
Inventor 顾文冯晓倩吕秋周健
Owner SHANGHAI UNIV OF ENG SCI
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