A fast-response semiconductor heterojunction ultraviolet photodetector and its manufacturing method
A fast-response, semi-conductive technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as low efficiency of semiconductor photoelectric devices, poor performance of ultraviolet light detectors, and difficulty in device performance meeting application requirements. Achieve the effects of simple structure, fast response recovery, and improved response recovery speed
Active Publication Date: 2019-04-30
UNIV OF SHANGHAI FOR SCI & TECH
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[0005] At present, most ZnO / GaN heterojunctions are composed of n-type ZnO and p-type GaN materials. However, the efficiency of semiconductor optoelectronic devices made of the above materials is low, the performance of semiconductor heterojunction ultraviolet light detectors is poor, and the device performance is still low. Difficult to meet application requirements (Appl.Phys.Lett.2014, 105, 072106)
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[0037]In order to make the technical means and effects realized by the present invention easy to understand, the present invention will be described in detail below in conjunction with the embodiments and accompanying drawings.
[0038]
[0039] figure 1 It is a structural schematic diagram of a two-dimensional structure semiconductor thin film n-GaN / one-dimensional structure semiconductor nanowire n-ZnO semiconductor heterojunction ultraviolet photodetector modified by graphene quantum dots in an embodiment of the present invention.
[0040] Such as figure 1 As shown, a fast-response semiconductor heterojunction ultraviolet light detector 100 is used for fast detection of ultraviolet light signals, including: an insulating substrate 10, a two-dimensional structure semiconductor thin film 20, a metal electrode 30, a one-dimensional structure semiconductor nanometer Line array 40 , zero-dimensional structure semiconductor quantum dot 50 , transparent electrode 60 , transpare...
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The invention provides a fast-response semiconductor heterojunction ultraviolet-light detector and a method of making the same. The fast-response semiconductor heterojunction ultraviolet-light detector for rapid detection on an ultraviolet-light signal comprises an insulating substrate, a two-dimensional-structure thin semiconductor film arranged on the upper end surface of the insulating substrate, a metal electrode plated on the surface of the two-dimensional-structure thin semiconductor film, a one-dimensional-structure semiconductor nano-wire array growing on the surface of the two-dimensional-structure thin semiconductor film vertically, zero-dimensional-structure semiconductor quantum dots attached to the surfaces of one-dimensional-structure semiconductor nano wires uniformly, a transparent electrode arranged on the top of the one-dimensional-structure semiconductor nano-wire array, a transparent polymer arranged on the upper end surface of the transparent electrode, two leads connected to the metal electrode and the transparent electrode, and a packaging polymer arranged between the two-dimensional-structure thin semiconductor film and the transparent polymer.
Description
technical field [0001] The invention belongs to the field of functional device manufacturing and application technology research, and relates to a fast-response semiconductor heterojunction ultraviolet light detector and a manufacturing method thereof. Background technique [0002] Semiconductor ultraviolet detectors have the advantages of high responsivity, high sensitivity, high quantum efficiency, and low background noise, and are widely used in satellite communications, fire detection, biosensors, environmental monitoring, and chemical analysis. Most semiconductor ultraviolet photodetectors work based on the photoconductive effect of semiconductor materials, that is, using ultraviolet light to irradiate semiconductor materials with suitable forbidden band widths, so that electrons in the valence band transition to the conduction band to form non-equilibrium carriers, significantly Increase the conductivity of semiconductor materials, so as to realize the detection of ult...
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IPC IPC(8): H01L31/109H01L31/18B82Y30/00H01L31/0352
CPCY02P70/50
Inventor 祝元坤刘德帅王现英康云龙王丁
Owner UNIV OF SHANGHAI FOR SCI & TECH