Processing method for etching and cutting sapphire through laser-induced KOH chemical reaction

Abstract

The invention provides a processing method for etching and cutting sapphire through a laser-induced KOH chemical reaction, and belongs to the field of special processing. The processing method mainlycomprises the following four steps that (1) the surface of the sapphire is uniformly covered with a layer of KOH powder; (2) laser system parameters and process parameters of sapphire laser etching are determined; (3) after the laser scanning path and the scanning speed are determined, etching of the sapphire is conducted by a laser beam according to the scanning path; and (4) if the sapphire is cut, the laser beam is split in the groove etching direction; and if the sapphire is etched, the step is omitted. According to the processing method, two etching methods of fusion KOH corrosion of thesapphire and laser ablation of the sapphire are combined, so that etching with the high etching rate of the sapphire is conducted; based on the processing method, a sapphire thin plate is cut by meansof the crack controlling method; a complex two-dimensional etched groove can be etched on the surface of the sapphire; and due to the fact that the etching mechanism of the processing method is thatsapphire corrosion is mainly achieved through the chemical reaction, the high etching rate under the condition of low crack damage can be achieved, and high-quality linear cutting of the sapphire thinplate can also be realized.

Description

Technical field: [0001] The invention relates to a laser-induced KOH chemical reaction etching and cutting sapphire processing method, which belongs to the application field of special processing. Background technique: [0002] Single crystal sapphire is a versatile crystalline material, in addition to having excellent physical properties. In addition to chemical properties and optical properties, it also has the characteristics of good light transmission, high melting point, high hardness, excellent electrical insulation, good thermal conductivity, and stable chemical properties. It has a wide range of applications in the fields of national defense, superconductivity, optoelectronics, and microelectronics. application. Whether it is a sapphire window for infrared detectors in the defense field or a sapphire substrate for the LED industry, high requirements are placed on the processing accuracy (surface shape accuracy, dimensional accuracy, etc.) and surface processing inte...

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Problems solved by technology

At present, ultrashort pulse laser and ordinary pulse ultraviolet laser are used for sapphire processing. Among them, ultrashort pulse laser etching sapphire has the problem of very low removal rate, which is only suitable for precision processing, while ordinary pulse ultraviolet laser etching sapphire, generally There are two methods: laser-induced plasma etching and laser back wet etching. Among them, the laser-induced plasma method is difficult to avoid damage phenomena such as chipping and cracks, and the laser back wet etching of sapphire also has a removal rate. extremely low question

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