Processing method for etching and cutting sapphire through laser-induced KOH chemical reaction
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- JIANGNAN UNIV
- Publication Date
- 2018-01-12
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
Technical field:
[0001] The invention relates to a laser-induced KOH chemical reaction etching and cutting sapphire processing method, which belongs to the application field of special processing. Background technique:
[0002] Single crystal sapphire is a versatile crystalline material, in addition to having excellent physical properties. In addition to chemical properties and optical properties, it also has the characteristics of good light transmission, high melting point, high hardness, excellent electrical insulation, good thermal conductivity, and stable chemical properties. It has a wide range of applications in the fields of national defense, superconductivity, optoelectronics, and microelectronics. application. Whether it is a sapphire window for infrared detectors in the defense field or a sapphire substrate for the LED industry, high requirements are placed on the processing accuracy (surface shape accuracy, dimensional accuracy, etc.) and surface processing inte...